Transient hardened power FETs

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Description

N-channel power FETs offer significant advantages in power conditioning circuits. Similiarily to all MOS technologies, power FET devices are vulnerable to ionizing radiation, and are particularily susceptible to burn-out in high dose rate irradiations (>1E10 rads(Si)/sec.), which precludes their use in many military environments. This paper will summarize the physical mechanisms responsible for burn-out, and discuss various fabrication techniques designed to improve the transient hardness of power FETs. Power FET devices were fabricated with several of these techniques, and data will be presented which demonstrates that transient hardness levels in excess of 1E12 rads(Si)/sec. are easily achievable.

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Pages: 7

Creation Information

Dawes, W.R. Jr.; Fischer, T.A.; Huang, C.C.C.; Meyer, W.J.; Smith, C.S.; Blanchard, R.A. et al. January 1, 1986.

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Description

N-channel power FETs offer significant advantages in power conditioning circuits. Similiarily to all MOS technologies, power FET devices are vulnerable to ionizing radiation, and are particularily susceptible to burn-out in high dose rate irradiations (>1E10 rads(Si)/sec.), which precludes their use in many military environments. This paper will summarize the physical mechanisms responsible for burn-out, and discuss various fabrication techniques designed to improve the transient hardness of power FETs. Power FET devices were fabricated with several of these techniques, and data will be presented which demonstrates that transient hardness levels in excess of 1E12 rads(Si)/sec. are easily achievable.

Physical Description

Pages: 7

Notes

NTIS, PC A02/MF A01; 1.

Source

  • 23. annual conference on nuclear and space radiation effects, Providence, RI, USA, 20 Jul 1986

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  • Other: DE86013311
  • Report No.: CONF-860706-14
  • Grant Number: AC04-76DP00789
  • Office of Scientific & Technical Information Report Number: 5336000
  • Archival Resource Key: ark:/67531/metadc1068421

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Office of Scientific & Technical Information Technical Reports

Reports, articles and other documents harvested from the Office of Scientific and Technical Information.

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Creation Date

  • January 1, 1986

Added to The UNT Digital Library

  • Feb. 4, 2018, 10:51 a.m.

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  • March 20, 2018, 8:08 p.m.

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Dawes, W.R. Jr.; Fischer, T.A.; Huang, C.C.C.; Meyer, W.J.; Smith, C.S.; Blanchard, R.A. et al. Transient hardened power FETs, article, January 1, 1986; United States. (digital.library.unt.edu/ark:/67531/metadc1068421/: accessed October 20, 2018), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.