(Investigation of low-cost solar cells based on Cu/sub 2/O). Third quarterly progress report, November 1, 1979-January 31, 1980

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Efforts this quarter concentrated on completion and check-out of the MBE system, deposition of ZnS films, analysis of the internal photoresponse for Cu-Cu/sub 2/O cells, and fabrication and characterization of Cu-Cu/sub 2/O solar cells. In-doped ZnS films with very good optical quality and finite conductivity were obtained by co-depositing In and ZnS. Analysis of the internal photoresponse indicated that minority carrier diffusion lengths on the order of 10 ..mu..m are being achieved with the present Cu/sub 2/O growth procedure. Active area values of J/sub PH/ = 8.52 mA/cm/sup 2/ and AM1 Efficiency = 1.76% were achieved for Cu-Cu/sub 2/O cells. ... continued below

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Pages: 33

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Olsen, L.C. March 12, 1980.

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Efforts this quarter concentrated on completion and check-out of the MBE system, deposition of ZnS films, analysis of the internal photoresponse for Cu-Cu/sub 2/O cells, and fabrication and characterization of Cu-Cu/sub 2/O solar cells. In-doped ZnS films with very good optical quality and finite conductivity were obtained by co-depositing In and ZnS. Analysis of the internal photoresponse indicated that minority carrier diffusion lengths on the order of 10 ..mu..m are being achieved with the present Cu/sub 2/O growth procedure. Active area values of J/sub PH/ = 8.52 mA/cm/sup 2/ and AM1 Efficiency = 1.76% were achieved for Cu-Cu/sub 2/O cells. These devices appear to have an MIS structure, or fixed charge at the interface. In particular, analysis of I-V data indicates that the current-voltage characteristics for applied voltages greater than 0.3 V are characterized by n approx. = 1 and J/sub 0/ approx. = 2 x 10/sup -9/ mA/cm/sup 2/, which implies an effective barrier height of 0.94 eV compared to the theoretical value of 0.7 eV for a Cu/Cu/sub 2/O Schottky barrier. Another very significant achievement this past quarter was the development of a surface preparation procedure which results in a nearly perfect stochiometry at the surface.

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Pages: 33

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NTIS, PC A03/MF A01.

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  • Report No.: DOE/ET/23006-3
  • Grant Number: AC04-79ET23006
  • DOI: 10.2172/5416605 | External Link
  • Office of Scientific & Technical Information Report Number: 5416605
  • Archival Resource Key: ark:/67531/metadc1067031

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Office of Scientific & Technical Information Technical Reports

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  • March 12, 1980

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  • Feb. 4, 2018, 10:51 a.m.

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  • April 4, 2018, 1:01 p.m.

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Olsen, L.C. (Investigation of low-cost solar cells based on Cu/sub 2/O). Third quarterly progress report, November 1, 1979-January 31, 1980, report, March 12, 1980; United States. (digital.library.unt.edu/ark:/67531/metadc1067031/: accessed May 25, 2018), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.