Low pressure chemical vapor deposition of polysilicon

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The low pressure chemical vapor deposition of polycrystalline silicon was studied to define the controlling process parameters and the requirements for commercial implementation. Silane and silane-nitrogen mixtures were utilized as source gases in a tubular reactor containing parallel disk substrates oriented with surface normals in the direction of flow. The results of the study showed that the deposition reaction is surface kinetic reaction controlled over the range of temperature studied, 600 to 700/sup 0/C, that the reaction is first order with respect to silane, and with an activation energy of 1.33 x 10/sup 5/ J/g mole. A gradient in temperature ... continued below

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Pages: 13

Creation Information

Gieske, R.J.; McMullin, J.J. & Donaghey, L.F. August 1, 1977.

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This article is part of the collection entitled: Office of Scientific & Technical Information Technical Reports and was provided by UNT Libraries Government Documents Department to Digital Library, a digital repository hosted by the UNT Libraries. It has been viewed 14 times . More information about this article can be viewed below.

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  • Lawrence Berkeley Laboratory
    Publisher Info: California Univ., Berkeley (USA). Lawrence Berkeley Lab.
    Place of Publication: Berkeley, California

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Description

The low pressure chemical vapor deposition of polycrystalline silicon was studied to define the controlling process parameters and the requirements for commercial implementation. Silane and silane-nitrogen mixtures were utilized as source gases in a tubular reactor containing parallel disk substrates oriented with surface normals in the direction of flow. The results of the study showed that the deposition reaction is surface kinetic reaction controlled over the range of temperature studied, 600 to 700/sup 0/C, that the reaction is first order with respect to silane, and with an activation energy of 1.33 x 10/sup 5/ J/g mole. A gradient in temperature along the reactor tube is sufficient to compensate for reactant depletion and to produce a uniform deposition rate.

Physical Description

Pages: 13

Notes

Dep. NTIS, PC A02/MF A01.

Source

  • 6. international conference on chemical vapor deposition, Atlanta, GA, USA, 10 Oct 1977

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  • Report No.: LBL-6901
  • Report No.: CONF-771004-6
  • Grant Number: W-7405-ENG-48
  • Office of Scientific & Technical Information Report Number: 5243047
  • Archival Resource Key: ark:/67531/metadc1066480

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Office of Scientific & Technical Information Technical Reports

Reports, articles and other documents harvested from the Office of Scientific and Technical Information.

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Creation Date

  • August 1, 1977

Added to The UNT Digital Library

  • Feb. 4, 2018, 10:51 a.m.

Description Last Updated

  • April 24, 2018, 4:47 p.m.

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Gieske, R.J.; McMullin, J.J. & Donaghey, L.F. Low pressure chemical vapor deposition of polysilicon, article, August 1, 1977; Berkeley, California. (digital.library.unt.edu/ark:/67531/metadc1066480/: accessed October 22, 2018), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.