Optical image storage in ion implanted PLZT ceramics

PDF Version Also Available for Download.

Description

Optical images can be stored in transparent lead-lanthanum-zirconate-titanate (PLZT) ceramics by exposure to near-uv light with photon energies greater than the band gas energy of approx. 3.35 eV. The image storage process relies on optically induced changes in the switching properties of ferroelectric domains (photoferroelectric effect). Stored images are nonvolatile but can be erased by uniform uv illumination and simultaneous application of an electric field. Although high quality images, with contrast variations of greater than or equal to 100:1 and spatial resolution of approx. 10 ..mu..m, can be stored using the photoferroelectric effect, relatively high exposure energies (approx. 100 mJ/cm/sup ... continued below

Physical Description

Pages: 29

Creation Information

Peercy, P. S. & Land, C. E. January 1, 1980.

Context

This article is part of the collection entitled: Office of Scientific & Technical Information Technical Reports and was provided by UNT Libraries Government Documents Department to Digital Library, a digital repository hosted by the UNT Libraries. More information about this article can be viewed below.

Who

People and organizations associated with either the creation of this article or its content.

Publisher

Provided By

UNT Libraries Government Documents Department

Serving as both a federal and a state depository library, the UNT Libraries Government Documents Department maintains millions of items in a variety of formats. The department is a member of the FDLP Content Partnerships Program and an Affiliated Archive of the National Archives.

Contact Us

What

Descriptive information to help identify this article. Follow the links below to find similar items on the Digital Library.

Description

Optical images can be stored in transparent lead-lanthanum-zirconate-titanate (PLZT) ceramics by exposure to near-uv light with photon energies greater than the band gas energy of approx. 3.35 eV. The image storage process relies on optically induced changes in the switching properties of ferroelectric domains (photoferroelectric effect). Stored images are nonvolatile but can be erased by uniform uv illumination and simultaneous application of an electric field. Although high quality images, with contrast variations of greater than or equal to 100:1 and spatial resolution of approx. 10 ..mu..m, can be stored using the photoferroelectric effect, relatively high exposure energies (approx. 100 mJ/cm/sup 2/) are required to store these images. This large exposure energy severely limits the range of possible applications of nonvolatile image storage in PLZT ceramics. It was found in H, He, and Ar implanted PLZT that the photosensitivity can be significantly increased by ion implantation into the surface to be exposed. The photosensitivity after implantation with 5 x 10/sup 14/ 500 keV Ar/cm/sup 2/ is increased by about three orders of magnitude over that of unimplanted PLZT. The image storage process and the effect of ion implantation is presented along with a phenomenological model which describes the enhancement in photosensitivity obtained by ion implantation. This model takes into account both light- and ion implantation-induced changes in conductivity and gives quantitative agreement with the measured changes in the coercive voltage with light intensity for ion implanted PLZT.

Physical Description

Pages: 29

Notes

NTIS, PC A03/MF A01.

Source

  • Ion beam modification of materials conference, Albany, NY, USA, 14 Jul 1980

Language

Item Type

Identifier

Unique identifying numbers for this article in the Digital Library or other systems.

  • Report No.: SAND-80-0729C
  • Report No.: CONF-800744-1
  • Grant Number: AC04-76DP00789
  • Office of Scientific & Technical Information Report Number: 5220925
  • Archival Resource Key: ark:/67531/metadc1066144

Collections

This article is part of the following collection of related materials.

Office of Scientific & Technical Information Technical Reports

Reports, articles and other documents harvested from the Office of Scientific and Technical Information.

Office of Scientific and Technical Information (OSTI) is the Department of Energy (DOE) office that collects, preserves, and disseminates DOE-sponsored research and development (R&D) results that are the outcomes of R&D projects or other funded activities at DOE labs and facilities nationwide and grantees at universities and other institutions.

What responsibilities do I have when using this article?

When

Dates and time periods associated with this article.

Creation Date

  • January 1, 1980

Added to The UNT Digital Library

  • Feb. 4, 2018, 10:51 a.m.

Description Last Updated

  • May 18, 2018, 1:34 p.m.

Usage Statistics

When was this article last used?

Congratulations! It looks like you are the first person to view this item online.

Interact With This Article

Here are some suggestions for what to do next.

Start Reading

PDF Version Also Available for Download.

Citations, Rights, Re-Use

Peercy, P. S. & Land, C. E. Optical image storage in ion implanted PLZT ceramics, article, January 1, 1980; Albuquerque, New Mexico. (digital.library.unt.edu/ark:/67531/metadc1066144/: accessed May 21, 2018), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.