Photogenerated carrier-induced reactions on uhv semiconductor surfaces

Thumbnail image of item number 1 in: 'Photogenerated carrier-induced reactions on uhv semiconductor surfaces'.
Thumbnail image of item number 2 in: 'Photogenerated carrier-induced reactions on uhv semiconductor surfaces'.
Thumbnail image of item number 3 in: 'Photogenerated carrier-induced reactions on uhv semiconductor surfaces'.
Thumbnail image of item number 4 in: 'Photogenerated carrier-induced reactions on uhv semiconductor surfaces'.
Showing 1-4 of 29 pages in this report.

PDF Version Also Available for Download.

Description

The objective for this experimental work was to examine the reaction mechanisms, half-collision dynamics, and other optically induced chemical effects, that are operable on a well characterized single-crystal semiconductor surface. Of particular interest were reactions induced by charge transfer from the semiconductor surface including hot carrier and thermalized carrier processes. The primary technique to measure the desorbed fragment translational energies was time-of-flight mass-spectroscopy, used in conjunction with a pulsed tunable laser source. The work was carried out in ultrahigh vacuum, thus other surface spectroscopies such as temperature-programmed desorption, (TPD), (LEED), etc. were used as needed. In the project, the photoreactions … continued below

Physical Description

28 pages

Creation Information

Osgood, R.M. Jr. May 28, 1992.

Context

This report is part of the collection entitled: Office of Scientific & Technical Information Technical Reports and was provided by the UNT Libraries Government Documents Department to the UNT Digital Library, a digital repository hosted by the UNT Libraries. It has been viewed 23 times. More information about this report can be viewed below.

Who

People and organizations associated with either the creation of this report or its content.

Author

Sponsor

Publisher

  • Columbia University
    Publisher Info: Columbia Univ., New York, NY (United States)
    Place of Publication: New York City, New York

Provided By

UNT Libraries Government Documents Department

Serving as both a federal and a state depository library, the UNT Libraries Government Documents Department maintains millions of items in a variety of formats. The department is a member of the FDLP Content Partnerships Program and an Affiliated Archive of the National Archives.

About | Browse this Partner

Contact Us

Corrections Questions

What

Descriptive information to help identify this report. Follow the links below to find similar items on the Digital Library.

Description

The objective for this experimental work was to examine the reaction mechanisms, half-collision dynamics, and other optically induced chemical effects, that are operable on a well characterized single-crystal semiconductor surface. Of particular interest were reactions induced by charge transfer from the semiconductor surface including hot carrier and thermalized carrier processes. The primary technique to measure the desorbed fragment translational energies was time-of-flight mass-spectroscopy, used in conjunction with a pulsed tunable laser source. The work was carried out in ultrahigh vacuum, thus other surface spectroscopies such as temperature-programmed desorption, (TPD), (LEED), etc. were used as needed. In the project, the photoreactions of several halogen-containing molecules on GaAs(110) surfaces have been investigated. The studies have made the first observations of several new photochemical processes on uhv prepared surfaces including intermolecular charge transfer; desorption by thermal-carrier-induced reactions (including the measurement of coverage-dependent changes in the translational energies of the desorbed products); interferometric oscillation of photoinduced reactions; and self-quenching of thermal carrier reactions on surfaces.

Physical Description

28 pages

Notes

OSTI; NTIS; GPO Dep.

Language

Item Type

Identifier

Unique identifying numbers for this report in the Digital Library or other systems.

Collections

This report is part of the following collection of related materials.

Office of Scientific & Technical Information Technical Reports

Reports, articles and other documents harvested from the Office of Scientific and Technical Information.

Office of Scientific and Technical Information (OSTI) is the Department of Energy (DOE) office that collects, preserves, and disseminates DOE-sponsored research and development (R&D) results that are the outcomes of R&D projects or other funded activities at DOE labs and facilities nationwide and grantees at universities and other institutions.

About | Browse this Collection

What responsibilities do I have when using this report?

Digital Files

When

Dates and time periods associated with this report.

Creation Date

  • May 28, 1992

Added to The UNT Digital Library

  • Feb. 4, 2018, 10:51 a.m.

Description Last Updated

  • March 2, 2020, 6:46 p.m.

Usage Statistics

When was this report last used?

Yesterday: 0
Past 30 days: 0
Total Uses: 23
More Statistics

Interact With This Report

Here are some suggestions for what to do next.

Start Reading

Thumbnail image of item number 1 in: 'Photogenerated carrier-induced reactions on uhv semiconductor surfaces'.
Thumbnail image of item number 2 in: 'Photogenerated carrier-induced reactions on uhv semiconductor surfaces'.
Thumbnail image of item number 3 in: 'Photogenerated carrier-induced reactions on uhv semiconductor surfaces'.
Thumbnail image of item number 4 in: 'Photogenerated carrier-induced reactions on uhv semiconductor surfaces'.

PDF Version Also Available for Download.

Citations, Rights, Re-Use

International Image Interoperability Framework

IIF Logo

We support the IIIF Presentation API

Links for Robots

Helpful links in machine-readable formats.

Archival Resource Key (ARK)

International Image Interoperability Framework (IIIF)

Metadata Formats

Images

URLs

Stats

Osgood, R.M. Jr. Photogenerated carrier-induced reactions on uhv semiconductor surfaces, report, May 28, 1992; New York City, New York. (https://digital.library.unt.edu/ark:/67531/metadc1065246/: accessed April 19, 2024), University of North Texas Libraries, UNT Digital Library, https://digital.library.unt.edu; crediting UNT Libraries Government Documents Department.

Back to Top of Screen