Development of passive electronic components for instrumentation of improved geothermal logging tools and components. Semiannual progress report. Report No. 1. [For temperatures up to 500/sup 0/C]

PDF Version Also Available for Download.

Description

Research progress is reported on the development of passive components, resistors, capacitors, metallization, and passivation, that will withstand well logging temperatures to 500/sup 0/C and have extremely low temperature coefficients. The lower the temperature coefficients, the more exacting the instrumentation designs can be without elaborate compensation techniques. The method of fabricating the thin film components is that of chemical vapor deposition (CVD) which is a major deviation from the standard approach. The films are grown in a CVD reactor by passing various reactant gases over a heated substrate. The reactor was modified in order to accommodate the gases needed in ... continued below

Physical Description

Pages: 31

Creation Information

Raymond, L.S.; Hamilton, D.J. & Kerwin, W.J. April 20, 1977.

Context

This report is part of the collection entitled: Office of Scientific & Technical Information Technical Reports and was provided by UNT Libraries Government Documents Department to Digital Library, a digital repository hosted by the UNT Libraries. More information about this report can be viewed below.

Who

People and organizations associated with either the creation of this report or its content.

Provided By

UNT Libraries Government Documents Department

Serving as both a federal and a state depository library, the UNT Libraries Government Documents Department maintains millions of items in a variety of formats. The department is a member of the FDLP Content Partnerships Program and an Affiliated Archive of the National Archives.

Contact Us

What

Descriptive information to help identify this report. Follow the links below to find similar items on the Digital Library.

Description

Research progress is reported on the development of passive components, resistors, capacitors, metallization, and passivation, that will withstand well logging temperatures to 500/sup 0/C and have extremely low temperature coefficients. The lower the temperature coefficients, the more exacting the instrumentation designs can be without elaborate compensation techniques. The method of fabricating the thin film components is that of chemical vapor deposition (CVD) which is a major deviation from the standard approach. The films are grown in a CVD reactor by passing various reactant gases over a heated substrate. The reactor was modified in order to accommodate the gases needed in the deposition of metals. The reactor can be operated over a temperature range of 400/sup 0/C to greater than 1200/sup 0/C, and at any pressure between atmospheric and 1 x 10/sup -3/ torr. Tungsten, tungsten-silicon, and silicon nitride were successfully deposited on oxidized silicon wafers. The tungsten is used for interconnects and capacitor plates, tungsten-silicon is used as a high resistivity material for resistors, and silicon nitride is used as a dielectric for the capacitors and as a passivation layer. The materials are currently being studied in terms of their deposition parameters and electrical characteristics.

Physical Description

Pages: 31

Notes

Dep. NTIS, PC A03/MF A01.

Language

Item Type

Identifier

Unique identifying numbers for this report in the Digital Library or other systems.

  • Report No.: COO-4081-1
  • Grant Number: EY-76-S-02-4081
  • DOI: 10.2172/5063302 | External Link
  • Office of Scientific & Technical Information Report Number: 5063302
  • Archival Resource Key: ark:/67531/metadc1061579

Collections

This report is part of the following collection of related materials.

Office of Scientific & Technical Information Technical Reports

Reports, articles and other documents harvested from the Office of Scientific and Technical Information.

Office of Scientific and Technical Information (OSTI) is the Department of Energy (DOE) office that collects, preserves, and disseminates DOE-sponsored research and development (R&D) results that are the outcomes of R&D projects or other funded activities at DOE labs and facilities nationwide and grantees at universities and other institutions.

What responsibilities do I have when using this report?

When

Dates and time periods associated with this report.

Creation Date

  • April 20, 1977

Added to The UNT Digital Library

  • Jan. 22, 2018, 7:23 a.m.

Description Last Updated

  • Jan. 25, 2018, 3:38 p.m.

Usage Statistics

When was this report last used?

Yesterday: 0
Past 30 days: 1
Total Uses: 5

Interact With This Report

Here are some suggestions for what to do next.

Start Reading

PDF Version Also Available for Download.

International Image Interoperability Framework

IIF Logo

We support the IIIF Presentation API

Raymond, L.S.; Hamilton, D.J. & Kerwin, W.J. Development of passive electronic components for instrumentation of improved geothermal logging tools and components. Semiannual progress report. Report No. 1. [For temperatures up to 500/sup 0/C], report, April 20, 1977; United States. (digital.library.unt.edu/ark:/67531/metadc1061579/: accessed August 20, 2018), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.