Ion beam spectroscopy as a means of in-situ monitoring of thin film deposition

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Low energy (5--15 keV) pulsed beam Ion Scattering Spectroscopy (ISS) and Direct Recoil Spectroscopy (DRS) are surface analytical tools which possess the ability to provide a remarkably wide range of information directly relevant to the growth of multi-component semiconductor, metal and metal oxide thin films and layered structures. Ion beam methods have not been widely used for this purpose because the design of existing commercial instrumentation is unsuitable in terms of vacuum requirements, data acquisition rate, geometric interference with the deposition equipment, and the magnitude of the ion beam dose and consequent film damage required for the acquisition of spectra ... continued below

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Pages: (12 p)

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Krauss, A.R.; Rangaswamy, M.; Lamich, G.; Gruen, D.M. (Argonne National Lab., IL (United States)); Schultz, J.A. (Ionwerks, Inc., Houston, TX (United States)) & Schmidt, H. (Schmidt Instruments, Inc., Houston, TX (United States)) January 1, 1992.

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Description

Low energy (5--15 keV) pulsed beam Ion Scattering Spectroscopy (ISS) and Direct Recoil Spectroscopy (DRS) are surface analytical tools which possess the ability to provide a remarkably wide range of information directly relevant to the growth of multi-component semiconductor, metal and metal oxide thin films and layered structures. Ion beam methods have not been widely used for this purpose because the design of existing commercial instrumentation is unsuitable in terms of vacuum requirements, data acquisition rate, geometric interference with the deposition equipment, and the magnitude of the ion beam dose and consequent film damage required for the acquisition of spectra with reasonable signal-noise ratios. Users of advanced custom-built Time-of-Flight (TOF) instruments have been largely interested in other problems and for the most part, unaware of some of the unique operational characteristics of TOF DR/ISS as they pertain to thin film growth. We discuss here some of the physical properties which may be measured by DR/ISS and describe a physical implementation of the technique which is suitable as a real-time probe of thin film deposition in terms of very low required beam dose, rapid data acquisition, physical non-interference with the deposition equipment and high ambient pressure operation.

Physical Description

Pages: (12 p)

Notes

OSTI; NTIS; GPO Dep.

Source

  • International conference on metallurgical coatings and thin films, San Diego, CA (United States), 6-10 Apr 1992

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  • Other: DE92014857
  • Report No.: ANL/CP-75799
  • Report No.: CONF-920439--7
  • Grant Number: W-31109-ENG-38
  • Office of Scientific & Technical Information Report Number: 5065969
  • Archival Resource Key: ark:/67531/metadc1060561

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Office of Scientific & Technical Information Technical Reports

Reports, articles and other documents harvested from the Office of Scientific and Technical Information.

Office of Scientific and Technical Information (OSTI) is the Department of Energy (DOE) office that collects, preserves, and disseminates DOE-sponsored research and development (R&D) results that are the outcomes of R&D projects or other funded activities at DOE labs and facilities nationwide and grantees at universities and other institutions.

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  • January 1, 1992

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  • Jan. 22, 2018, 7:23 a.m.

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  • Jan. 30, 2018, 1:09 p.m.

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Krauss, A.R.; Rangaswamy, M.; Lamich, G.; Gruen, D.M. (Argonne National Lab., IL (United States)); Schultz, J.A. (Ionwerks, Inc., Houston, TX (United States)) & Schmidt, H. (Schmidt Instruments, Inc., Houston, TX (United States)). Ion beam spectroscopy as a means of in-situ monitoring of thin film deposition, article, January 1, 1992; Illinois. (digital.library.unt.edu/ark:/67531/metadc1060561/: accessed April 19, 2018), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.