Virtual cathode microwave devices -- Basics

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Unlike a conventional microwave tube, a virtual-cathode device operates above the space-charge limit where the depth of the space-charge potential can cause electron reflection. The region associated with this electron reflection is referred to as a virtual cathode. Microwaves can be generated through oscillations in the position of the virtual cathode and through the bunching of electrons trapped in a potential well between the real and virtual cathodes. These two mechanisms are competitive. There are three basic classes of virtual cathode devices: (1) reflex triode; (2) reditron and side-shoot vircator; and (3) reflex diode or vircator. The reflex diode is ... continued below

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Pages: (19 p)

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Thode, L.E. & Snell, C.M. January 1, 1991.

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Description

Unlike a conventional microwave tube, a virtual-cathode device operates above the space-charge limit where the depth of the space-charge potential can cause electron reflection. The region associated with this electron reflection is referred to as a virtual cathode. Microwaves can be generated through oscillations in the position of the virtual cathode and through the bunching of electrons trapped in a potential well between the real and virtual cathodes. These two mechanisms are competitive. There are three basic classes of virtual cathode devices: (1) reflex triode; (2) reditron and side-shoot vircator; and (3) reflex diode or vircator. The reflex diode is the highest power virtual-cathode device. For the reflex diode the energy exchange between the beam and electromagnetic wave occurs in both the axial and radial directions. In some designs the oscillating-virtual-cathode frequency exceeds the reflexing-electron frequency exceeds the oscillating-virtual-cathode frequency. For the flex diode a periodic disruption in magnetic insulation can modulate the high- frequency microwave power. Overall, particle-in-cell simulation predictions and axial reflex diode experiments are in good agreement. Although frequency stability and phase locking of the reflex diode have been demonstrated, little progress has been made in efficiency enhancement. 58 refs., 11 figs.

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Pages: (19 p)

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OSTI; NTIS; GPO Dep.

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  • International school of plasma physics high power microwave generation and applications, Varenna (Italy), 9-17 Sep 1991

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  • Other: DE92000318
  • Report No.: LA-UR-91-2833
  • Report No.: CONF-9109279--2
  • Grant Number: W-7405-ENG-36
  • Office of Scientific & Technical Information Report Number: 5197817
  • Archival Resource Key: ark:/67531/metadc1058521

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Office of Scientific & Technical Information Technical Reports

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  • January 1, 1991

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  • Jan. 22, 2018, 7:23 a.m.

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  • Feb. 1, 2018, 7:06 p.m.

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Thode, L.E. & Snell, C.M. Virtual cathode microwave devices -- Basics, article, January 1, 1991; New Mexico. (digital.library.unt.edu/ark:/67531/metadc1058521/: accessed October 18, 2018), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.