Effects of electronically neutral impurities on muonium in germanium

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Description

Low-temperature measurements of muonium parameters in various germanium crystals have been performed. We have measured crystals with different levels of neutral impurities, with and without dislocations, and with different annealing histories. The most striking result is the apparent trapping of Mu by silicon impurities in germanium.

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Pages: 7

Creation Information

Clawson, C.W.; Crowe, K.M.; Haller, E.E.; Rosenblum, S.S. & Brewer, J.H. April 1, 1983.

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Description

Low-temperature measurements of muonium parameters in various germanium crystals have been performed. We have measured crystals with different levels of neutral impurities, with and without dislocations, and with different annealing histories. The most striking result is the apparent trapping of Mu by silicon impurities in germanium.

Physical Description

Pages: 7

Notes

NTIS, PC A02/MF A01.

Source

  • Yamada conference on muon spin rotation and associated problems, Shimoda, Japan, 18 Apr 1983

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  • Other: DE84008490
  • Report No.: LBL-16944
  • Report No.: CONF-830455-12
  • Grant Number: AC03-76SF00098
  • Office of Scientific & Technical Information Report Number: 5034482
  • Archival Resource Key: ark:/67531/metadc1057431

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Office of Scientific & Technical Information Technical Reports

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  • April 1, 1983

Added to The UNT Digital Library

  • Jan. 22, 2018, 7:23 a.m.

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  • Jan. 25, 2018, 4:21 p.m.

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Clawson, C.W.; Crowe, K.M.; Haller, E.E.; Rosenblum, S.S. & Brewer, J.H. Effects of electronically neutral impurities on muonium in germanium, article, April 1, 1983; United States. (digital.library.unt.edu/ark:/67531/metadc1057431/: accessed August 17, 2018), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.