Studies in semiconducting metal oxides in conjunction with silicon for solid state gas sensors. Progress report for April 1, 1977--March 31, 1978

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ZnO films have been reproducibly grown using chemical deposition and radio-frequency sputtering techniques. These films are polycrystalline or amorphous, but are stable, uniform and lend themselves to material characterization by Auger and x-ray analysis techniques, and electrical measurements. SnO/sub 2/ films have been reproducibly grown by chemical vapor deposition, vacuum deposition and radio-frequency sputtering techniques. These films are also polycrystalline or amorphous, and lend themselves to material characterization and measurements. By vacuum deposition techniques, Si-SnO/sub 2/ heterojunctions have been grown, which exhibit good rectification properties. An original thermodynamic analysis of the growth of SnO/sub 2/ by a chemical vapor deposition ... continued below

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Pages: 52

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Jordan, A. G. April 1, 1978.

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ZnO films have been reproducibly grown using chemical deposition and radio-frequency sputtering techniques. These films are polycrystalline or amorphous, but are stable, uniform and lend themselves to material characterization by Auger and x-ray analysis techniques, and electrical measurements. SnO/sub 2/ films have been reproducibly grown by chemical vapor deposition, vacuum deposition and radio-frequency sputtering techniques. These films are also polycrystalline or amorphous, and lend themselves to material characterization and measurements. By vacuum deposition techniques, Si-SnO/sub 2/ heterojunctions have been grown, which exhibit good rectification properties. An original thermodynamic analysis of the growth of SnO/sub 2/ by a chemical vapor deposition technique based on the reaction between SnCl/sub 4/ and H/sub 2/O has been developed and submitted for publication. Pd-SiO/sub 2/-Si Schottky barrier diodes exhibiting excellent rectification properties have been successfully fabricated. A formalism has been established for the analysis of the behavior of these devices in the presence of H/sub 2/, H/sub 2/S and CO. The ZnO films grown by chemical deposition have proven to be sensitive to CO and CH/sub 4/. Sputtered ZnO films are sensitive to O/sub 2/ and H/sub 2/. SnO/sub 2/ films grown by chemical vapor deposition are not very sensitive to gases. Sputtered films, however, are very sensitive to H/sub 2/ and H/sub 2/S. The Pd-SiO/sub 2/-Si diodes are extremely sensitive to H/sub 2/, H/sub 2/S and NH/sub 3/, and, under certain conditions, to CO. A microprocessor data processing system has been developed incorporating gas sensors in the presence of a variety of gases and gas mixtures.

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Pages: 52

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Dep. NTIS, PC A04/MF A01.

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  • Report No.: COO-4346-1
  • Grant Number: EE-77-S-02-4346
  • DOI: 10.2172/5003410 | External Link
  • Office of Scientific & Technical Information Report Number: 5003410
  • Archival Resource Key: ark:/67531/metadc1055751

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Creation Date

  • April 1, 1978

Added to The UNT Digital Library

  • Jan. 22, 2018, 7:23 a.m.

Description Last Updated

  • Feb. 1, 2018, 10:30 p.m.

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Jordan, A. G. Studies in semiconducting metal oxides in conjunction with silicon for solid state gas sensors. Progress report for April 1, 1977--March 31, 1978, report, April 1, 1978; Pittsburgh, Pennsylvania. (digital.library.unt.edu/ark:/67531/metadc1055751/: accessed June 25, 2018), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.