Preparation of thin film solar cells under very low pressure conditions. Final report, October 1, 1976--September 30, 1977

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In this study the feasibility of fabricating backwall Schottky barrier polycrystalline solar cells under ultra-high vacuum conditions of 1 x 10/sup -10/ torr (N/sub 2/) was investigated. Thin films of electron beam vaporized silicon were deposited on cleaned metal substrates of tungsten, tantalum and hafnium. Mass spectra from the quadrapole residual gas analyzer were used to determine the partial pressure of peak heights of 13 residual gases during each processing step. During separate silicon depositions, the substrate temperature was varied between 400 and 750/sup 0/C and deposition rates between 20 and 750 A/min were used. Surface contamination and metal diffusion ... continued below

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Pages: 79

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Schmidt, F.A.; Shanks, H.R.; Bevolo, A.J. & Campisi, G.J. January 1, 1977.

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In this study the feasibility of fabricating backwall Schottky barrier polycrystalline solar cells under ultra-high vacuum conditions of 1 x 10/sup -10/ torr (N/sub 2/) was investigated. Thin films of electron beam vaporized silicon were deposited on cleaned metal substrates of tungsten, tantalum and hafnium. Mass spectra from the quadrapole residual gas analyzer were used to determine the partial pressure of peak heights of 13 residual gases during each processing step. During separate silicon depositions, the substrate temperature was varied between 400 and 750/sup 0/C and deposition rates between 20 and 750 A/min were used. Surface contamination and metal diffusion were monitored by in situ Auger electron spectrometry before and after cleaning, deposition and annealing. Auger depth profiling, x-ray analysis, and SEM in the topographic and channeling modes, were utilized to characterize the samples with respect to silicon-metal boundary layer, interdiffusion, silicide formation and grain size of silicon. The clean metal surface was found to enhance thin film silicide growth. Fine grain silicon films were obtained for all samples that were not completely converted to a metallic silicide. Tungsten, tantalum and hafnium were found to form silicides at temperatures as low as 600/sup 0/C.

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Pages: 79

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Dep. NTIS, PC A05/MF A01.

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  • Report No.: IS-4350
  • Grant Number: W-7405-ENG-82
  • DOI: 10.2172/5100683 | External Link
  • Office of Scientific & Technical Information Report Number: 5100683
  • Archival Resource Key: ark:/67531/metadc1055473

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  • January 1, 1977

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  • Jan. 22, 2018, 7:23 a.m.

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  • Jan. 26, 2018, 3:36 p.m.

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Schmidt, F.A.; Shanks, H.R.; Bevolo, A.J. & Campisi, G.J. Preparation of thin film solar cells under very low pressure conditions. Final report, October 1, 1976--September 30, 1977, report, January 1, 1977; Iowa. (digital.library.unt.edu/ark:/67531/metadc1055473/: accessed August 17, 2018), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.