Surprising patterns of CMOS susceptibility to ESD and implications on long-term reliability Metadata

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Title

  • Main Title Surprising patterns of CMOS susceptibility to ESD and implications on long-term reliability

Creator

  • Author: Schwank, J.R.
    Creator Type: Personal
  • Author: Baker, R.P.
    Creator Type: Personal
  • Author: Armendariz, M.G.
    Creator Type: Personal

Publisher

  • Name: Sandia National Laboratories
    Place of Publication: Albuquerque, New Mexico

Date

  • Creation: 1980-01-01

Language

  • English

Description

  • Content Description: CMOS electrostatic discharge (ESD) failures in a product where, by design, the device input terminals are not accessible to ESD led to this study of device susceptibility and an analysis of the long-term reliability of devices in assemblies from that production line. Some surprising patterns of device susceptibility are established and it is shown that the probability of long-term failure in devices whose electrical characteristics have been degraded by electrostatic discharge is small.
  • Physical Description: Pages: 8

Subject

  • Keyword: Semiconductor Devices
  • Keyword: Electrostatics
  • Keyword: Chemical Explosives
  • STI Subject Categories: 450100 -- Military Technology, Weaponry, & National Defense-- Chemical Explosions & Explosives
  • Keyword: Transistors 420800* -- Engineering-- Electronic Circuits & Devices-- (-1989)
  • Keyword: Electronic Circuits
  • Keyword: Printed Circuits
  • Keyword: Electric Discharges
  • STI Subject Categories: 42 Engineering
  • Keyword: Detonators
  • Keyword: Mos Transistors
  • Keyword: Failures
  • Keyword: Reliability
  • Keyword: Explosives
  • STI Subject Categories: 45 Military Technology, Weaponry, And National Defense

Source

  • Conference: Electrical overstress/electrostatis discharge symposium, San Diego, CA, USA, 9 Sep 1980

Collection

  • Name: Office of Scientific & Technical Information Technical Reports
    Code: OSTI

Institution

  • Name: UNT Libraries Government Documents Department
    Code: UNTGD

Resource Type

  • Article

Format

  • Text

Identifier

  • Report No.: SAND-80-0957C
  • Report No.: CONF-800962-1
  • Grant Number: AC04-76DP00789
  • Office of Scientific & Technical Information Report Number: 5129080
  • Archival Resource Key: ark:/67531/metadc1055209

Note

  • Display Note: NTIS, PC A02/MF A01.