Ion-implanted PLZT ceramics: a new high-sensitivity image storage medium

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Results were presented of our studies of photoferroelectric (PFE) image storage in H- and He-ion implanted PLZT (lead lanthanum zirconate titanate) ceramics which demonstrate that the photosensitivity of PLZT can be significantly increased by ion implantation in the ceramic surface to be exposed to image light. More recently, implantations of Ar and Ar + Ne into the PLZT surface have produced much greater photosensitivity enhancement. For example, the photosensitivity after implantation with 1.5 x 10/sup 14/ 350 keV Ar/cm/sup 2/ + 1 x 10/sup 15/ 500 keV Ne/cm/sup 2/ is increased by about four orders of magnitude over that of ... continued below

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Pages: 14

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Peercy, P.S. & Land, C.E. January 1, 1980.

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Results were presented of our studies of photoferroelectric (PFE) image storage in H- and He-ion implanted PLZT (lead lanthanum zirconate titanate) ceramics which demonstrate that the photosensitivity of PLZT can be significantly increased by ion implantation in the ceramic surface to be exposed to image light. More recently, implantations of Ar and Ar + Ne into the PLZT surface have produced much greater photosensitivity enhancement. For example, the photosensitivity after implantation with 1.5 x 10/sup 14/ 350 keV Ar/cm/sup 2/ + 1 x 10/sup 15/ 500 keV Ne/cm/sup 2/ is increased by about four orders of magnitude over that of unimplanted PLZT. Measurements indicate that the photosensitivity enhancement in ion-implanted PLZT is controlled by implantation-produced disorder which results in marked decreases in dielectric constant and dark conductivity and changes in photoconductivity of the implanted layer. The effects of Ar- and Ar + Ne-implantation are presented along with a phenomenological model which describes the enhancement in photosensitivity obtained by ion implantation. This model takes into account both light- and implantation-induced changes in conductivity and gives quantitative agreement with the measured changes in the coercive voltage V/sub c/ as a function of near-uv light intensity for both unimplanted and implanted PLZT. The model, used in conjunction with calculations of the profiles of implantation-produced disorder, has provided the information needed for co-implanting ions of different masses, e.g., Ar and Ne, to improve photosensitivity.

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Pages: 14

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NTIS, PC A02/MF A01.

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  • 1980 IEEE-SID biennial display research conference, Cherry Hill, NJ, USA, 21 Oct 1980

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  • Report No.: SAND-80-1030C
  • Report No.: CONF-801060-1
  • Grant Number: AC04-76DP00789
  • Office of Scientific & Technical Information Report Number: 5070207
  • Archival Resource Key: ark:/67531/metadc1053957

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  • January 1, 1980

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  • Jan. 22, 2018, 7:23 a.m.

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  • Feb. 2, 2018, 1:20 p.m.

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Peercy, P.S. & Land, C.E. Ion-implanted PLZT ceramics: a new high-sensitivity image storage medium, article, January 1, 1980; Albuquerque, New Mexico. (digital.library.unt.edu/ark:/67531/metadc1053957/: accessed November 13, 2018), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.