Development of Silicon Nanowire Field Effect Transistors

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An economically reliable technique for the synthesis of silicon nanowire was developed using silicon chloride as source material. The 30-40 micron long nanowires were found to have diameters ranging from 40 – 100 nm. An amorphous oxide shell covered the nanowires, post-growth. Raman spectroscopy confirmed the composition of the shell to be silicon-dioxide. Photoluminescence measurements of the as-grown nanowires showed green emission, attributed to the presence of the oxide shell. Etching of the oxide shell was found to decrease the intensity of green emission. n-type doping of the silicon nanowires was achieved using antimony as the dopant. The maximum dopant ... continued below

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Nukala, Prathyusha December 2011.

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  • Nukala, Prathyusha

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An economically reliable technique for the synthesis of silicon nanowire was developed using silicon chloride as source material. The 30-40 micron long nanowires were found to have diameters ranging from 40 – 100 nm. An amorphous oxide shell covered the nanowires, post-growth. Raman spectroscopy confirmed the composition of the shell to be silicon-dioxide. Photoluminescence measurements of the as-grown nanowires showed green emission, attributed to the presence of the oxide shell. Etching of the oxide shell was found to decrease the intensity of green emission. n-type doping of the silicon nanowires was achieved using antimony as the dopant. The maximum dopant concentration was achieved by post-growth diffusion. Intrinsic nanowire parameters were determined by implementation of the as-grown and antimony doped silicon nanowires in field effect transistor configuration.

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  • December 2011

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  • Oct. 2, 2012, 4:18 p.m.

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  • June 14, 2017, 3:03 p.m.

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Nukala, Prathyusha. Development of Silicon Nanowire Field Effect Transistors, thesis, December 2011; Denton, Texas. (digital.library.unt.edu/ark:/67531/metadc103364/: accessed October 22, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; .