Annealing of Gamma Ray Induced Changes in Antimony Doped Germanium

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An investigatiori of the annealing of the radioinduced carrier concentration change in Sb-doped Ge in the range 370 to 455 l K was made. The irradiations were conducted at liquid nitrogen temperature using Co/ sup 60/ gamma irradiation. A model that explains the observed behavior is presented. On the basis of the model, the observed annealing consists of vacancy diffusion simultaneously to impurity sites and annihilation centers. Analysis of the activation energy for the annealing process yields values of 0.8 to 1.4 ev in agreement with the range of energies that were attributed to vacancy motion but that cannot be … continued below

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Pages: 110

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Pigg, J. C. May 28, 1963.

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An investigatiori of the annealing of the radioinduced carrier concentration change in Sb-doped Ge in the range 370 to 455 l K was made. The irradiations were conducted at liquid nitrogen temperature using Co/ sup 60/ gamma irradiation. A model that explains the observed behavior is presented. On the basis of the model, the observed annealing consists of vacancy diffusion simultaneously to impurity sites and annihilation centers. Analysis of the activation energy for the annealing process yields values of 0.8 to 1.4 ev in agreement with the range of energies that were attributed to vacancy motion but that cannot be resolved into unique components. The complex activation energy is explained by the model in terms of the impurity concentration. It was observed that the change in carrier concentration saturates before complete annealing is achieved. The saturation, which is stable for further annealing at higher temperatures, is also explained in terms of the model. The vacancies are considered to diffuse to annihilation centers, such as dislocation lines, and to the site adjacent to an Sb atom. Those that go to an Sb are trapped. The Sb- vacancy complex can break up to supply a vacancy back to the system or can trap an additional vacancy producing an Sbdivacancy complex. The Sb-divacancy complex is stable for the temperature range considered. The Sb-vacancy reaction comes into equilibrium very quickly compared to the annihilation process. (auth)

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Pages: 110

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Other Information: Orig. Receipt Date: 31-DEC-63

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  • May 28, 1963

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Pigg, J. C. Annealing of Gamma Ray Induced Changes in Antimony Doped Germanium, report, May 28, 1963; Oak Ridge, Tennessee. (https://digital.library.unt.edu/ark:/67531/metadc1028907/: accessed May 22, 2025), University of North Texas Libraries, UNT Digital Library, https://digital.library.unt.edu; crediting UNT Libraries Government Documents Department.

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