Internal friction in intrinsic and N-type germanium and silicon

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The high-temperature internal friction of germanium and silicon, intrinsic and highly n-type, was measured as a function of temperature, frequency, dislocation density, and dopant concentration. Two features found in the internal-friction spectrum were investigated. At moderate temperatures in both materials, when not too highly doped, there appears a peak, the features of which are independent of dislocation density, due to the acousto-electric effect. The high-temperature dislocation-dependent damping in intrinsic and intrinsic- behaving germanium and silicon was found to agree well with most previous studies. If deformed at high temperature and allowed to anneal, highly doped, n-type material behaved intrinsically due ... continued below

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Pages: 122

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Gerk, A.P. February 1, 1974.

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Description

The high-temperature internal friction of germanium and silicon, intrinsic and highly n-type, was measured as a function of temperature, frequency, dislocation density, and dopant concentration. Two features found in the internal-friction spectrum were investigated. At moderate temperatures in both materials, when not too highly doped, there appears a peak, the features of which are independent of dislocation density, due to the acousto-electric effect. The high-temperature dislocation-dependent damping in intrinsic and intrinsic- behaving germanium and silicon was found to agree well with most previous studies. If deformed at high temperature and allowed to anneal, highly doped, n-type material behaved intrinsically due to preferential precipitation at dislocations. if deformed at minimum temperatures and not allowed to anneal, a greatly enhanced dislocation-dependent internal friction was found that depended upon the extrinsic carrier concentration. (23 figures, 93 references) (DLC)

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Pages: 122

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Dep. NTIS

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  • Other Information: Thesis. Orig. Receipt Date: 30-JUN-74

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  • Report No.: COO--1198-1029
  • Grant Number: AT(11-1)-1198
  • DOI: 10.2172/4373789 | External Link
  • Office of Scientific & Technical Information Report Number: 4373789
  • Archival Resource Key: ark:/67531/metadc1026779

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Office of Scientific & Technical Information Technical Reports

Reports, articles and other documents harvested from the Office of Scientific and Technical Information.

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  • February 1, 1974

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  • Oct. 15, 2017, 10:09 p.m.

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Gerk, A.P. Internal friction in intrinsic and N-type germanium and silicon, thesis or dissertation, February 1, 1974; United States. (digital.library.unt.edu/ark:/67531/metadc1026779/: accessed September 18, 2018), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.