Printability and inspectability of programmed pit defects on teh masks in EUV lithography

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Printability and inspectability of phase defects in ELlVL mask originated from substrate pit were investigated. For this purpose, PDMs with programmed pits on substrate were fabricated using different ML sources from several suppliers. Simulations with 32-nm HP L/S show that substrate pits with below {approx}20 nm in depth would not be printed on the wafer if they could be smoothed by ML process down to {approx}1 nm in depth on ML surface. Through the investigation of inspectability for programmed pits, minimum pit sizes detected by KLA6xx, AIT, and M7360 depend on ML smoothing performance. Furthermore, printability results for pit defects ... continued below

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Kang, I.-Y.; Seo, H.-S.; Ahn, B.-S.; Lee, D.-G.; Kim, D.; Huh, S. et al. March 12, 2010.

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Printability and inspectability of phase defects in ELlVL mask originated from substrate pit were investigated. For this purpose, PDMs with programmed pits on substrate were fabricated using different ML sources from several suppliers. Simulations with 32-nm HP L/S show that substrate pits with below {approx}20 nm in depth would not be printed on the wafer if they could be smoothed by ML process down to {approx}1 nm in depth on ML surface. Through the investigation of inspectability for programmed pits, minimum pit sizes detected by KLA6xx, AIT, and M7360 depend on ML smoothing performance. Furthermore, printability results for pit defects also correlate with smoothed pit sizes. AIT results for pattemed mask with 32-nm HP L/S represents that minimum printable size of pits could be {approx}28.3 nm of SEVD. In addition, printability of pits became more printable as defocus moves to (-) directions. Consequently, printability of phase defects strongly depends on their locations with respect to those of absorber patterns. This indicates that defect compensation by pattern shift could be a key technique to realize zero printable phase defects in EUVL masks.

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  • SPIE advanced lithography, San Jose, CA, February 21-25, 2010

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  • Report No.: LBNL-3404E
  • Grant Number: DE-AC02-05CH11231
  • Office of Scientific & Technical Information Report Number: 983264
  • Archival Resource Key: ark:/67531/metadc1015775

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  • March 12, 2010

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  • Oct. 14, 2017, 8:36 a.m.

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  • Oct. 17, 2017, 6:57 p.m.

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Kang, I.-Y.; Seo, H.-S.; Ahn, B.-S.; Lee, D.-G.; Kim, D.; Huh, S. et al. Printability and inspectability of programmed pit defects on teh masks in EUV lithography, article, March 12, 2010; Berkeley, California. (digital.library.unt.edu/ark:/67531/metadc1015775/: accessed December 11, 2018), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.