Photon flux requirements for EUV reticle imaging microscopy in the 22 and 16 nm nodes

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EUV-wavelength actinic microscopy yields detailed information about EUV mask patterns, architectures, defects, and the performance of defect repair strategies, without the complications of photoresist imaging. The measured aerial image intensity profiles provide valuable feedback to improve mask and lithography system modeling methods. In order to understand the photon-flux-dependent pattern measurement limits of EUV mask-imaging microscopy, we have investigated the effects of shot noise on aerial image linewidth measurements for lines in the 22 and 16-nm generations. Using a simple model of image formation near the resolution limit, we probe the influence of photon shot noise on the measured, apparent line ... continued below

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Wintz, D.; Goldberg, K. A.; Mochi, I. & Huh, S. March 12, 2010.

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EUV-wavelength actinic microscopy yields detailed information about EUV mask patterns, architectures, defects, and the performance of defect repair strategies, without the complications of photoresist imaging. The measured aerial image intensity profiles provide valuable feedback to improve mask and lithography system modeling methods. In order to understand the photon-flux-dependent pattern measurement limits of EUV mask-imaging microscopy, we have investigated the effects of shot noise on aerial image linewidth measurements for lines in the 22 and 16-nm generations. Using a simple model of image formation near the resolution limit, we probe the influence of photon shot noise on the measured, apparent line roughness. With this methodology, we arrive at general flux density requirements independent of the specific EUV microscope configurations. Analytical and statistical analysis of aerial image simulations in the 22 and 16-nm generations reveal the trade-offs between photon energy density (controllable with exposure time), effective pixel dimension on the CCO (controlled by the microscope's magnification ratio), and image log slope (ILS). We find that shot-noise-induced linewidth roughness (LWR) varies imersely with the square root of the photon energy density, and is proportional to the imaging magnification ratio. While high magnification is necessary for adequate spatial resolution, for a given flux density, higher magnification ratios have diminishing benefits. With practical imaging parameters, we find that in order to achieve an LWR (3{sigma}) value of 5% of linewidth for dense, 88-nm mask features with 80% aerial image contrast and 13.5-nm effective pixel width (1000x magnification ratio), a peak photon flux of approximately 1400 photons per pixel per exposure is required.

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  • SPIE advanced lithography, San Jose, CA, February 21-25, 2010

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  • Report No.: LBNL-3336E
  • Grant Number: DE-AC02-05CH11231
  • Office of Scientific & Technical Information Report Number: 983198
  • Archival Resource Key: ark:/67531/metadc1015431

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Reports, articles and other documents harvested from the Office of Scientific and Technical Information.

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  • March 12, 2010

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  • Oct. 14, 2017, 8:36 a.m.

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  • Oct. 17, 2017, 6:25 p.m.

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Wintz, D.; Goldberg, K. A.; Mochi, I. & Huh, S. Photon flux requirements for EUV reticle imaging microscopy in the 22 and 16 nm nodes, article, March 12, 2010; Berkeley, California. (digital.library.unt.edu/ark:/67531/metadc1015431/: accessed July 23, 2018), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.