We describe the imaging and characterization of native defects on a full field extreme ultraviolet (EUV) mask, using several reticle and wafer inspection modes. Mask defect images recorded with the SEMA TECH Berkeley Actinic Inspection Tool (AIT), an EUV-wavelength (13.4 nm) actinic microscope, are compared with mask and printed-wafer images collected with scanning electron microscopy (SEM) and deep ultraviolet (DUV) inspection tools. We observed that defects that appear to be opaque in the SEM can be highly transparent to EUV light, and inversely, defects that are mostly transparent to the SEM can be highly opaque to EUV. The nature and …
continued below
Publisher Info:
Ernest Orlando Lawrence Berkeley National Laboratory, Berkeley, CA (United States)
Place of Publication:
Berkeley, California
Provided By
UNT Libraries Government Documents Department
Serving as both a federal and a state depository library, the UNT Libraries Government Documents Department maintains millions of items in a variety of formats. The department is a member of the FDLP Content Partnerships Program and an Affiliated Archive of the National Archives.
Descriptive information to help identify this article.
Follow the links below to find similar items on the Digital Library.
Description
We describe the imaging and characterization of native defects on a full field extreme ultraviolet (EUV) mask, using several reticle and wafer inspection modes. Mask defect images recorded with the SEMA TECH Berkeley Actinic Inspection Tool (AIT), an EUV-wavelength (13.4 nm) actinic microscope, are compared with mask and printed-wafer images collected with scanning electron microscopy (SEM) and deep ultraviolet (DUV) inspection tools. We observed that defects that appear to be opaque in the SEM can be highly transparent to EUV light, and inversely, defects that are mostly transparent to the SEM can be highly opaque to EUV. The nature and composition of these defects, whether they appear on the top surface, within the multilayer coating, or on the substrate as buried bumps or pits, influences both their significance when printed, and their detectability with the available techniques. Actinic inspection quantitatively predicts the characteristics of printed defect images in ways that may not be possible with non-EUV techniques. As a quantitative example, we investigate the main structural characteristics of a buried pit defect based on EUV through-focus imaging.
This article is part of the following collection of related materials.
Office of Scientific & Technical Information Technical Reports
Reports, articles and other documents harvested from the Office of Scientific and Technical Information.
Office of Scientific and Technical Information (OSTI) is the Department of Energy (DOE) office that collects, preserves, and disseminates DOE-sponsored research and development (R&D) results that are the outcomes of R&D projects or other funded activities at DOE labs and facilities nationwide and grantees at universities and other institutions.
Mochi, I.; Goldberg, K. A.; Fontaine, B. La; Tchikoulaeva, A. & Holfeld, C.Actinic imaging of native and programmed defects on a full-field mask,
article,
March 12, 2010;
Berkeley, California.
(https://digital.library.unt.edu/ark:/67531/metadc1015400/:
accessed March 28, 2024),
University of North Texas Libraries, UNT Digital Library, https://digital.library.unt.edu;
crediting UNT Libraries Government Documents Department.