In Situ Laser Crystallization of Amorphous Silicon for TFT Applications: Controlled Ultrafast Studies in the Dynamic TEM

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An in situ method for studying the role of laser energy on the microstructural evolution of polycrystalline Si is presented. By monitoring both laser energy and microstructural evolution simultaneously in the dynamic transmission electron microscope, information on grain size and defect concentration can be correlated directly with processing conditions. This proof of principle study provides fundamental scientific information on the crystallization process that has technological importance for the development of thin film transistors. In conclusion, we successfully developed a method for studying UV laser processing of Si films in situ on nanosecond time scales, with ultimate implications for TFT application ... continued below

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Taheri, M; Teslich, N; Lu, J P; Morgan, D & Browning, N February 8, 2008.

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An in situ method for studying the role of laser energy on the microstructural evolution of polycrystalline Si is presented. By monitoring both laser energy and microstructural evolution simultaneously in the dynamic transmission electron microscope, information on grain size and defect concentration can be correlated directly with processing conditions. This proof of principle study provides fundamental scientific information on the crystallization process that has technological importance for the development of thin film transistors. In conclusion, we successfully developed a method for studying UV laser processing of Si films in situ on nanosecond time scales, with ultimate implications for TFT application improvements. In addition to grain size distribution as a function of laser energy density, we found that grain size scaled with laser energy in general. We showed that nanosecond time resolution allowed us to see the nucleation and growth front during processing, which will help further the understanding of microstructural evolution of poly-Si films for electronic applications. Future studies, coupled with high resolution TEM, will be performed to study grain boundary migration, intergranular defects, and grain size distribution with respect to laser energy and adsorption depth.

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PDF-file: 8 pages; size: 3.3 Mbytes

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  • Journal Name: Applied Physics Letters, vol. 97, no. 3, July 19, 2010, pp. 032102; Journal Volume: 97; Journal Issue: 3

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  • Report No.: LLNL-JRNL-401186
  • Grant Number: W-7405-ENG-48
  • Office of Scientific & Technical Information Report Number: 992280
  • Archival Resource Key: ark:/67531/metadc1015342

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Office of Scientific & Technical Information Technical Reports

Reports, articles and other documents harvested from the Office of Scientific and Technical Information.

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  • February 8, 2008

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  • Oct. 14, 2017, 8:36 a.m.

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  • Oct. 27, 2017, 5:36 p.m.

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Taheri, M; Teslich, N; Lu, J P; Morgan, D & Browning, N. In Situ Laser Crystallization of Amorphous Silicon for TFT Applications: Controlled Ultrafast Studies in the Dynamic TEM, article, February 8, 2008; Livermore, California. (digital.library.unt.edu/ark:/67531/metadc1015342/: accessed December 17, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.