Assessing out-of-band flare effects at the wafer level for EUV lithography

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To accurately estimate the flare contribution from the out-of-band (OOB), the integration of a DUV source into the SEMATECH Berkeley 0.3-NA Micro-field Exposure tool is proposed, enabling precisely controlled exposures along with the EUV patterning of resists in vacuum. First measurements evaluating the impact of bandwidth selected exposures with a table-top set-up and subsequent EUV patterning show significant impact on line-edge roughness and process performance. We outline a simulation-based method for computing the effective flare from resist sensitive wavelengths as a function of mask pattern types and sizes. This simulation method is benchmarked against measured OOB flare measurements and the ... continued below

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George, Simi; Naulleau, Patrick; Kemp, Charles; Denham, Paul & Rekawa, Senajith January 25, 2010.

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To accurately estimate the flare contribution from the out-of-band (OOB), the integration of a DUV source into the SEMATECH Berkeley 0.3-NA Micro-field Exposure tool is proposed, enabling precisely controlled exposures along with the EUV patterning of resists in vacuum. First measurements evaluating the impact of bandwidth selected exposures with a table-top set-up and subsequent EUV patterning show significant impact on line-edge roughness and process performance. We outline a simulation-based method for computing the effective flare from resist sensitive wavelengths as a function of mask pattern types and sizes. This simulation method is benchmarked against measured OOB flare measurements and the results obtained are in agreement.

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  • SPIE advanced lithography, San Jose, CA, February 21-26, 2010

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  • Report No.: LBNL-3284E
  • Grant Number: DE-AC02-05CH11231
  • Office of Scientific & Technical Information Report Number: 983155
  • Archival Resource Key: ark:/67531/metadc1015287

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Office of Scientific & Technical Information Technical Reports

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  • January 25, 2010

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  • Oct. 14, 2017, 8:36 a.m.

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  • Oct. 17, 2017, 6 p.m.

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George, Simi; Naulleau, Patrick; Kemp, Charles; Denham, Paul & Rekawa, Senajith. Assessing out-of-band flare effects at the wafer level for EUV lithography, article, January 25, 2010; Berkeley, California. (digital.library.unt.edu/ark:/67531/metadc1015287/: accessed December 12, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.