MBE Growth of Graded Structures for Polarized Electron Emitters Page: 8 of 10
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Figure 8. Measured x-ray diffraction curve of the grown A1GaAs/GaAs superlattice structure.
The photocathode wafers were cleaned and activated as described in the previous
section. Figure 9 shows the QE at 650 nm for the three samples. As the internal bias is
increased by increasing the aluminum grading, the QE increases as much as 25%. This is
the first demonstration that an electric field can be incorporated in the conduction band
and a QE enhancement is possible.
Al Grading (%i
Figure 9. QE at 650 nm as a function of the aluminum grading in AlGaAs/GaAs superlattice
I . . . . . I
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MBE Growth of Graded Structures for Polarized Electron Emitters, report, August 25, 2010; [California]. (https://digital.library.unt.edu/ark:/67531/metadc1015059/m1/8/: accessed March 21, 2019), University of North Texas Libraries, Digital Library, https://digital.library.unt.edu; crediting UNT Libraries Government Documents Department.