MBE Growth of Graded Structures for Polarized Electron Emitters Page: 7 of 10
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splitting was expected to be about 28 meV. Figure 6(b) shows the expected
polarization and QE as a function of the excitation wavelength. The band gap
wavelength was expected at 760 nm.
I I -I
1G 2' ?C dC C 1D0
Well Width (Angstrorns)
tC - ---..
es s -c :2' T -ac o 3
Figure 6. (a) Superlattice mini-band energies as a function of the well width. (b) Theoretical
predictions for the polarization and QE.
Three wafers were grown with different aluminum grading values in the active
layer: 1) no grading with x=0.35 , 2) 10% grading from x=0.35 to 0.25, and 3) 20%
grading from x=0.35 to 0.15. Because of the thin amount of the active layer and the
extremely low lattice mismatch between the Al and Ga atoms, the x-ray diffraction
simulation predicted two weak, widely spaced satellite peaks (Fig. 7) for the
superlattice. Actual measured x-ray data of the grown wafer was in close agreement
with the simulation (Fig. 8).
- I I [ I I -
-4000 -20 00 4000
Figure 7. Simulation of anticipated x-ray diffraction curve based on the graded AlGaAs/GaAs
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MBE Growth of Graded Structures for Polarized Electron Emitters, report, August 25, 2010; [California]. (https://digital.library.unt.edu/ark:/67531/metadc1015059/m1/7/: accessed March 21, 2019), University of North Texas Libraries, Digital Library, https://digital.library.unt.edu; crediting UNT Libraries Government Documents Department.