Nanoscale Electronic Inhomogeneity in In_2Se_3 Nanoribbons Revealed by Microwave Impedance Microscopy Page: 1 of 11
This article is part of the collection entitled: Office of Scientific & Technical Information Technical Reports and was provided to UNT Digital Library by the UNT Libraries Government Documents Department.
Extracted Text
The following text was automatically extracted from the image on this page using optical character recognition software:
SLAC-PUB-14040
Nanoscale Electronic Inhomogeneity in In2Se3 Nanoribbons
Revealed by Microwave Impedance Microscopy
Keji Lai', Hailin Peng2, Worasom Kundhikanjana', David T. Schoen2, Chong Xie2, Stefan Meister,
Yi Cui2, Michael A. Kelly2, Zhi-Xun Shen'
'Department of Applied Physics, Stanford University, Stanford, CA 94305
Department of Materials Science and Engineering, Stanford University, Stanford, CA 94305
Abstract
Driven by interactions due to the charge, spin, orbital, and lattice degrees of freedom, nanoscale
inhomogeneity has emerged as a new theme for materials with novel properties near multiphase
boundaries. As vividly demonstrated in complex metal oxides1-5 and chalcogenides67, these
microscopic phases are of great scientific and technological importance for research in high-
temperature superconductors ,2, colossal magnetoresistance effectO, phase-change memories5'6, and
domain switching operations7-9. Direct imaging on dielectric properties of these local phases,
however, presents a big challenge for existing scanning probe techniques. Here, we report the
observation of electronic inhomogeneity in indium selenide (In2Se3) nanoribbons10 by near-field
scanning microwave impedance microscopy11-13 Multiple phases with local resistivity spanning six
orders of magnitude are identified as the coexistence of superlattice, simple hexagonal lattice and
amorphous structures with -100nm inhomogeneous length scale, consistent with high-resolution
transmission electron microscope studies. The atomic-force-microscope-compatible microwave
probe is able to perform quantitative sub-surface electronic study in a noninvasive manner. Finally,
the phase change memory function in In2Se3 nanoribbon devices can be locally recorded with big
signal of opposite signs.
SIMES, SLAC National Accelerator Center, 2575 Sand Hill Road, Menlo Park, CA 94309
Work supported in part by US Department of Energy contract DE-AC02-76SF00515. 1
Upcoming Pages
Here’s what’s next.
Search Inside
This article can be searched. Note: Results may vary based on the legibility of text within the document.
Tools / Downloads
Get a copy of this page or view the extracted text.
Citing and Sharing
Basic information for referencing this web page. We also provide extended guidance on usage rights, references, copying or embedding.
Reference the current page of this Article.
Lai, K.J. Nanoscale Electronic Inhomogeneity in In_2Se_3 Nanoribbons Revealed by Microwave Impedance Microscopy, article, June 2, 2010; [California]. (https://digital.library.unt.edu/ark:/67531/metadc1013970/m1/1/: accessed March 19, 2024), University of North Texas Libraries, UNT Digital Library, https://digital.library.unt.edu; crediting UNT Libraries Government Documents Department.