Mask roughness and its implications for LER at the 22- and 16-nm nodes

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Line-edge roughness (LER) remains the most significant challenge facing the development of extreme ultraviolet (EUV) resist. The mask, however, has been found to be a significant contributor to image-plane LER. This has long been expected based on modeling and has more recently been demonstrated experimentally. Problems arise from both mask-absorber LER as well as mask multilayer roughness leading to random phase variations in the reflected beam and consequently speckle. Understanding the implications this has on mask requirements for the 22-nm half pitch node and below is crucial. Modeling results indicate a replicated surface roughness (RSR) specification of 50 pm and ... continued below

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Naulleau, Patrick; George, Simi A. & McClinton, Brittany M. February 16, 2010.

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Line-edge roughness (LER) remains the most significant challenge facing the development of extreme ultraviolet (EUV) resist. The mask, however, has been found to be a significant contributor to image-plane LER. This has long been expected based on modeling and has more recently been demonstrated experimentally. Problems arise from both mask-absorber LER as well as mask multilayer roughness leading to random phase variations in the reflected beam and consequently speckle. Understanding the implications this has on mask requirements for the 22-nm half pitch node and below is crucial. Modeling results indicate a replicated surface roughness (RSR) specification of 50 pm and a ruthenium capping layer roughness specification of 440 pm. Moreover, modeling indicates that it is crucial to achieve the current ITRS specifications for mask absorber LER which is significantly smaller than current capabilities.

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  • SPIE advanced lithography, San Jose, CA, February 21-26, 2010

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  • Report No.: LBNL-3308E
  • Grant Number: DE-AC02-05CH11231
  • Office of Scientific & Technical Information Report Number: 983176
  • Archival Resource Key: ark:/67531/metadc1012337

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  • February 16, 2010

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  • Oct. 14, 2017, 8:36 a.m.

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  • Oct. 18, 2017, 10:32 a.m.

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Naulleau, Patrick; George, Simi A. & McClinton, Brittany M. Mask roughness and its implications for LER at the 22- and 16-nm nodes, article, February 16, 2010; Berkeley, California. (digital.library.unt.edu/ark:/67531/metadc1012337/: accessed October 20, 2018), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.