Investigation of the Uniaxial Stress Dependence of the Effective Mass in N-Type InSb Using the Magnetophonon Effect

Investigation of the Uniaxial Stress Dependence of the Effective Mass in N-Type InSb Using the Magnetophonon Effect

Date: December 1971
Creator: Alsup, Dale Lynn
Description: The magnetophonon effect was used to investigate the uniaxial stress dependence of the effective mass in n-type InSb (indium antimonide).
Contributing Partner: UNT Libraries
ReSource, Volume 9, Number 1, Fall 1992

ReSource, Volume 9, Number 1, Fall 1992

Date: 1992
Creator: University of North Texas
Description: ReSource magazine includes articles and notes about research at University of North Texas in various academic fields.
Contributing Partner: University Relations, Communications & Marketing department for UNT
Edmonds et al. Reply

Edmonds et al. Reply

Date: April 8, 2005
Creator: Edmonds, Kevin; Boguslawski, Piotr; Wang, K. Y.; Campion, Richard Paul; Novikov, Sergei; Farley, N. R. S. et al.
Description: This article is a response to an article by M. Adell et al. [Phy. Rev. Lett. 94, 139701 (2005)] about semiconductor-based spintronics research.
Contributing Partner: UNT College of Arts and Sciences
Quantum-Confined CdS Nanoparticles on DNA Templates

Quantum-Confined CdS Nanoparticles on DNA Templates

Date: May 1998
Creator: Rho, Young Gyu
Description: As electronic devices became smaller, interest in quantum-confined semiconductor nanostructures increased. Self-assembled mesoscale semiconductor structures of II-VI nanocrystals are an especially exciting subject because of their controllable band gap and unique photophysical properties. Several preparative methods to synthesize and control the sizes of the individual nanocrystallites and the electronic and optical properties have been intensively studied. Fabrication of patterned nanostructures composed of quantum-confined nanoparticles is the next step toward practical applications. We have developed an innovative method to fabricate diverse nanostructures which relies on the size and a shape of a chosen deoxyribonucleic acid (DNA) template.
Contributing Partner: UNT Libraries
Work Function Study of Iridium Oxide and Molybdenum Using UPS and Simultaneous Fowler-Nordheim I-V Plots with Field Emission Energy Distributions

Work Function Study of Iridium Oxide and Molybdenum Using UPS and Simultaneous Fowler-Nordheim I-V Plots with Field Emission Energy Distributions

Date: August 1999
Creator: Bernhard, John Michael
Description: The characterization of work functions and field emission stability for molybdenum and iridium oxide coatings was examined. Single emission tips and flat samples of molybdenum and iridium oxide were prepared for characterization. The flat samples were characterized using X-ray Photoelectron Spectroscopy and X-ray diffraction to determine elemental composition, chemical shift, and crystal structure. Flat coatings of iridium oxide were also scanned by Atomic Force Microscopy to examine topography. Work functions were characterized by Ultraviolet Photoelectron Spectroscopy from the flat samples and by Field Emission Electron Distributions from the field emission tips. Field emission characterization was conducted in a custom build analytical chamber capable of measuring Field Emission Electron Distribution and Fowler-Nordheim I-V plots simultaneously to independently evaluate geometric and work function changes. Scanning Electron Microscope pictures were taken of the emission tips before and after field emission characterization to confirm geometric changes. Measurement of emission stability and work functions were the emphasis of this research. In addition, use of iridium oxide coatings to enhance emission stability was evaluated. Molybdenum and iridium oxide, IrO2, were characterized and found to have a work function of 4.6 eV and 4.2 eV by both characterization techniques, with the molybdenum value in agreement with previous ...
Contributing Partner: UNT Libraries
Strain effects on the interface properties of nitride semiconductors

Strain effects on the interface properties of nitride semiconductors

Date: March 15, 1997
Creator: Buongiorno Nardelli, Marco; Rapcewicz, Krzysztof & Bernholc, Jerry
Description: Article on the strain effects on the interface properties of nitride semiconductors.
Contributing Partner: UNT College of Arts and Sciences
UNT Research, Volume 20, 2011

UNT Research, Volume 20, 2011

Date: 2011
Creator: University of North Texas
Description: UNT Research magazine includes articles and notes about research at University of North Texas in various academic fields.
Contributing Partner: University Relations, Communications & Marketing department for UNT
Charge Collection Studies on Integrated Circuit Test Structures using Heavy-Ion Microbeams and MEDICI Simulation Calculations

Charge Collection Studies on Integrated Circuit Test Structures using Heavy-Ion Microbeams and MEDICI Simulation Calculations

Date: May 2000
Creator: Guo, Baonian
Description: Ion induced charge collection dynamics within Integrated Circuits (ICs) is important due to the presence of ionizing radiation in the IC environment. As the charge signals defining data states are reduced by voltage and area scaling, the semiconductor device will naturally have a higher susceptibility to ionizing radiation induced effects. The ionizing radiation can lead to the undesired generation and migration of charge within an IC. This can alter, for example, the memory state of a bit, and thereby produce what is called a "soft" error, or Single Event Upset (SEU). Therefore, the response of ICs to natural radiation is of great concern for the reliability of future devices. Immunity to soft errors is listed as a requirement in the 1997 National Technology Roadmap for Semiconductors prepared by the Semiconductor Industry Association in the United States. To design more robust devices, it is essential to create and test accurate models of induced charge collection and transport in semiconductor devices. A heavy ion microbeam produced by an accelerator is an ideal tool to study charge collection processes in ICs and to locate the weak nodes and structures for improvement through hardening design. In this dissertation, the Ion Beam Induced Charge Collection ...
Contributing Partner: UNT Libraries
The Growth and Characterization of Aluminum Nitride (AlN) Nanowires

The Growth and Characterization of Aluminum Nitride (AlN) Nanowires

Date: April 19, 2012
Creator: Herro, Alicia & Philipose, Usha
Description: This paper discusses research on the growth and characterization of aluminum nitride (AlN) nanowires.
Contributing Partner: UNT Honors College
A Materials Approach to Silicon Wafer Level Contamination Issues from the Wet Clean Process

A Materials Approach to Silicon Wafer Level Contamination Issues from the Wet Clean Process

Date: December 1996
Creator: Hall, Lindsey H. (Lindsey Harrison)
Description: Semiconductor devices are built using hyperpure silicon and very controlled levels of doping to create desired electrical properties. Contamination can alter these precisely controlled electrical properties that can render the device non-functional or unreliable. It is desirable to determine what impurities impact the device and control them. This study consists of four parts: a) determination of acceptable SCI (Standard Clean 1) bath contamination levels using VPD-DSE-GFAAS (Vapor Phase Decomposition Droplet Surface Etching Graphite Furnace Atomic Absorption Spectroscopy), b) copper deposition from various aqueous HF solutions, c) anion contamination from fluoropolymers used in chemical handling and d) metallic contamination from fluoropolymers and polyethylene used in chemical handling. A technique was developed for the determination of metals on a silicon wafer source at low levels. These levels were then correlated to contamination levels in a SCI bath. This correlation permits the determination of maximum permissible solution contaminant levels. Copper contamination is a concern for depositing on the wafer surface from hydrofluoric acid solutions. The relationship between copper concentration on the wafer surface and hydrofluoric acid concentration was determined. An inverse relationship exists and was explained by differences in diffusion rates between the differing copper species existing in aqueous hydrofluoric acid solutions. Finally, ...
Contributing Partner: UNT Libraries
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