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Electrostatic Mechanism of Emission Enhancement in Hybrid Metal-semiconductor Light-emitting Heterostructures

Description: III-V nitrides have been put to use in a variety of applications including laser diodes for modern DVD devices and for solid-state white lighting. Plasmonics has come to the foreground over the past decade as a means for increasing the internal quantum efficiency (IQE) of devices through resonant interaction with surface plasmons which exist at metal/dielectric interfaces. Increases in emission intensity of an order of magnitude have been previously reported using silver thin-films on InGaN/GaN… more
Date: May 2012
Creator: Llopis, Antonio
Item Type: Refine your search to only Thesis or Dissertation
Partner: UNT Libraries
open access

Ultrafast Spectroscopy of Hybrid Ingan/gan Quantum Wells

Description: Group III nitrides are efficient light emitters. The modification of internal optoelectronic properties of these materials due to strain, external or internal electric field are an area of interest. Insertion of metal nanoparticles (MNPs) (Ag, Au etc) inside the V-shaped inverted hexagonal pits (IHP) of InGaN/GaN quantum wells (QWs) offers the potential of improving the light emission efficiencies. We have observed redshift and blueshift due to the Au MNPs and Ag MNPs respectively. This sh… more
Date: August 2012
Creator: Mahat, Meg Bahadur
Item Type: Refine your search to only Thesis or Dissertation
Partner: UNT Libraries
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