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Carrier Mobility, Charge Trapping Effects on the Efficiency of Heavily Doped Organic Light-Emitting Diodes, and EU(lll) Based Red OLEDs

Description: Transient electroluminescence (EL) was used to measure the onset of emission delay in OLEDs based on transition metal, phosphorescent bis[3,5-bis(2-pyridyl)-1,2,4-triazolato] platinum(ΙΙ) and rare earth, phosphorescent Eu(hfa)3 with 4'-(p-tolyl)-2,2":6',2" terpyridine (ttrpy) doped into 4,4'-bis(carbazol-9-yl) triphenylamine (CBP), from which the carrier mobility was determined. For the Pt(ptp)2 doped CBP films in OLEDs with the structure: ITO/NPB (40nm)/mcp (10nm)/65% Pt(ptp)2:CBP (2… more
Date: August 2010
Creator: Lin, Ming-Te
Partner: UNT Libraries
open access

Design, Synthesis and Screening of Homoleptic and Heteroleptic Platinum(ii) Pyridylazolate Complexes for N-type Semiconducting and Light-emitting Devices

Description: A series of heteroleptic and homoleptic platinum(II) complexes has been synthesized and characterized towards their use in thin film devices such as organic light-emitting diodes (OLEDs) and organic thin film transistors (OTFTs). Pyridylpyrazolate- and pyridyltetrazolate-containing ligands were selected due to their structural rigidity and ease of functionalization. Single-crystal x-ray diffraction studies of two selected heteroleptic complexes show strong aggregation with preferential stacking… more
Date: August 2012
Creator: Oswald, Iain William Herbert
Partner: UNT Libraries
open access

Electrostatic Mechanism of Emission Enhancement in Hybrid Metal-semiconductor Light-emitting Heterostructures

Description: III-V nitrides have been put to use in a variety of applications including laser diodes for modern DVD devices and for solid-state white lighting. Plasmonics has come to the foreground over the past decade as a means for increasing the internal quantum efficiency (IQE) of devices through resonant interaction with surface plasmons which exist at metal/dielectric interfaces. Increases in emission intensity of an order of magnitude have been previously reported using silver thin-films on InGaN/GaN… more
Date: May 2012
Creator: Llopis, Antonio
Partner: UNT Libraries
open access

Ultrafast Spectroscopy of Hybrid Ingan/gan Quantum Wells

Description: Group III nitrides are efficient light emitters. The modification of internal optoelectronic properties of these materials due to strain, external or internal electric field are an area of interest. Insertion of metal nanoparticles (MNPs) (Ag, Au etc) inside the V-shaped inverted hexagonal pits (IHP) of InGaN/GaN quantum wells (QWs) offers the potential of improving the light emission efficiencies. We have observed redshift and blueshift due to the Au MNPs and Ag MNPs respectively. This sh… more
Date: August 2012
Creator: Mahat, Meg Bahadur
Partner: UNT Libraries
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