Formation and characterization of ion beam assisted nanosystems in silicon

Formation and characterization of ion beam assisted nanosystems in silicon

Date: August 2010
Creator: Poudel, Prakash R.; Rout, Bibhudutta; Hossain, K. M.; Dhoubhadel, Mangal; Kummari, Venkata C.; Neogi, Arup et al.
Description: Article on the formation and characterization of ion beam assisted nanosystems in silicon.
Contributing Partner: UNT College of Arts and Sciences
Direct evidence for the amorphous silicon phase in visible photoluminescent porous silicon

Direct evidence for the amorphous silicon phase in visible photoluminescent porous silicon

Date: August 3, 1992
Creator: Pérez, José M.; Villalobos, J.; McNeill, P.; Prasad, J.; Cheek, R.; Kelber, Jeffry A. et al.
Description: Article on direct evidence for the amorphous silicon phase in visible photoluminescent porous silicon.
Contributing Partner: UNT College of Arts and Sciences
Electrostatic Mechanism of Emission Enhancement in Hybrid Metal-semiconductor Light-emitting Heterostructures

Electrostatic Mechanism of Emission Enhancement in Hybrid Metal-semiconductor Light-emitting Heterostructures

Date: May 2012
Creator: Llopis, Antonio
Description: III-V nitrides have been put to use in a variety of applications including laser diodes for modern DVD devices and for solid-state white lighting. Plasmonics has come to the foreground over the past decade as a means for increasing the internal quantum efficiency (IQE) of devices through resonant interaction with surface plasmons which exist at metal/dielectric interfaces. Increases in emission intensity of an order of magnitude have been previously reported using silver thin-films on InGaN/GaN MQWs. the dependence on resonant interaction between the plasmons and the light emitter limits the applications of plasmonics for light emission. This dissertation presents a new non-resonant mechanism based on electrostatic interaction of carriers with induced image charges in a nearby metallic nanoparticle. Enhancement similar in strength to that of plasmonics is observed, without the restrictions imposed upon resonant interactions. in this work we demonstrate several key features of this new interaction, including intensity-dependent saturation, increase in the radiative recombination lifetime, and strongly inhomogeneous light emission. We also present a model for the interaction based on the aforementioned image charge interactions. Also discussed are results of work done in the course of this research resulting in the development of a novel technique for strain measurement ...
Contributing Partner: UNT Libraries
Electrostatic Effects in III-V Semiconductor Based Metal-optical Nanostructures

Electrostatic Effects in III-V Semiconductor Based Metal-optical Nanostructures

Access: Use of this item is restricted to the UNT Community.
Date: May 2012
Creator: Gryczynski, Karol Grzegorz
Description: The modification of the band edge or emission energy of semiconductor quantum well light emitters due to image charge induced phenomenon is an emerging field of study. This effect observed in quantum well light emitters is critical for all metal-optics based light emitters including plasmonics, or nanometallic electrode based light emitters. This dissertation presents, for the first time, a systematic study of the image charge effect on semiconductor–metal systems. the necessity of introducing the image charge interactions is demonstrated by experiments and mathematical methods for semiconductor-metal image charge interactions are introduced and developed.
Contributing Partner: UNT Libraries