Ion Beam Synthesis of Carbon Assisted Nanosystems in Silicon Based Substrates

Ion Beam Synthesis of Carbon Assisted Nanosystems in Silicon Based Substrates

Date: May 2011
Creator: Poudel, Prakash Raj
Description: The systematic study of the formation of β-SiC formed by low energy carbon ion (C-)implantation into Si followed by high temperature annealing is presented. The research is performed to explore the optimal annealing conditions. The formation of crystalline β-SiC is clearly observed in the sample annealed at 1100 °C for a period of 1 hr. Quantitative analysis is performed in the formation of β-SiC by the process of implantation of different carbon ion fluences of 1×1017, 2×1017, 5×1017, and 8×1017 atoms /cm2 at an ion energy of 65 keV into Si. It is observed that the average size of β-SiC crystals decreased and the amount of β-SiC crystals increased with the increase in the implanted fluences when the samples were annealed at 1100°C for 1 hr. However, it is observed that the amount of β-SiC linearly increased with the implanted fluences up to 5×1017 atoms /cm2. Above this fluence the amount of β-SiC appears to saturate. The stability of graphitic C-C bonds at 1100°C limits the growth of SiC precipitates in the sample implanted at a fluence of 8×1017 atoms /cm2 which results in the saturation behavior of SiC formation in the present study. Secondly, the carbon cluster formation process ...
Contributing Partner: UNT Libraries
Enhanced UV Light emission from Silicon nanoparticles induced by Au ion implantation

Enhanced UV Light emission from Silicon nanoparticles induced by Au ion implantation

Date: November 2, 2008
Creator: Singh, Akhilesh; Grycznski, Karol G.; Rout, Bibhudutta; Li, Jianyou; McDaniel, Floyd Del. (Floyd Delbert), 1942-; Neogi, Arup et al.
Description: Paper discussing a study of light emitting silicon fabricated by ion implantation.
Contributing Partner: UNT College of Arts and Sciences
Investigation of Selected Optically-Active Nanosystems Fashioned using Ion Implantation

Investigation of Selected Optically-Active Nanosystems Fashioned using Ion Implantation

Date: May 2006
Creator: Mitchell, Lee
Description: Opto-electronic semiconductor technology continues to grow at an accelerated pace, as the industry seeks to perfect devices such as light emitting diodes for purposes of optical processing and communication. A strive for greater efficiency with shrinking device dimensions, continually pushes the technology from both a design and materials aspect. Nanosystems such a quantum dots, also face new material engineering challenges as they enter the realm of quantum mechanics, with each system and material having markedly different electronic properties. Traditionally, the semiconductor industry has focused on materials such Group II-VI and III-V compounds as the basis material for future opto-electronic needs. Unfortunately, these material systems can be expensive and have difficulties integrating into current Si-based technology. The industry is reluctant to leave silicon due in part to silicon's high quality oxide, and the enormous amount of research invested into silicon based circuit fabrication. Although recently materials such as GaN are starting to dominate the electro-optical industry since a Si-based substitute has not been found. The purpose of the dissertation was to examine several promising systems that could be easily integrated into current Si-based technology and also be produced using simple inexpensive fabrication techniques such ion implantation. The development of optically active ...
Contributing Partner: UNT Libraries
Formation and characterization of ion beam assisted nanosystems in silicon

Formation and characterization of ion beam assisted nanosystems in silicon

Date: August 2010
Creator: Poudel, Prakash R.; Rout, Bibhudutta; Hossain, K. M.; Dhoubhadel, Mangal; Kummari, Venkata C.; Neogi, Arup et al.
Description: Article on the formation and characterization of ion beam assisted nanosystems in silicon.
Contributing Partner: UNT College of Arts and Sciences
Fast diffusion of As in polycrystalline silicon during rapid thermal annealing

Fast diffusion of As in polycrystalline silicon during rapid thermal annealing

Date: August 15, 1984
Creator: Wilson, Scott R.; Paulson, W. M.; Gregory, R. B.; Gressett, J. D.; Hamdi, A. H. & McDaniel, Floyd Del. (Floyd Delbert), 1942-
Description: This article discusses fast diffusion of As in polycrystalline silicon during rapid thermal annealing.
Contributing Partner: UNT College of Arts and Sciences
Rapid isothermal annealing of As-, P-, and B-implanted silicon

Rapid isothermal annealing of As-, P-, and B-implanted silicon

Date: June 15, 1984
Creator: Wilson, Scott R.; Paulson, W. M.; Gregory, R. B.; Hamdi, A. H. & McDaniel, Floyd Del. (Floyd Delbert), 1942-
Description: This article discusses rapid idothermal annealing of As-, P-, and B-implanted silicon.
Contributing Partner: UNT College of Arts and Sciences
L-shell x-ray production cross sections for light ions on Sm, Yb, and Pb

L-shell x-ray production cross sections for light ions on Sm, Yb, and Pb

Date: December 1975
Creator: Gray, Tom J.; Light, G. M.; Gardner, R. K. & McDaniel, Floyd Del. (Floyd Delbert), 1942-
Description: This article discusses L-shell x-ray production cross sections for light ions on Sm, Yb, and Pb.
Contributing Partner: UNT College of Arts and Sciences
Rapid isothermal anneal of 75As implanted silicon

Rapid isothermal anneal of 75As implanted silicon

Date: November 15, 1982
Creator: Wilson, Scott R.; Gregory, R. B.; Paulson, W. M.; Hamdi, A. H. & McDaniel, Floyd Del. (Floyd Delbert), 1942-
Description: Article discussing a study of the rapid isothermal anneal of 75As implanted silicon.
Contributing Partner: UNT College of Arts and Sciences
High sensitivity measurement of implanted As in the presence of Ge in Ge(x)Si(1-x)/Si layered alloys using trace element accelerator mass spectrometry

High sensitivity measurement of implanted As in the presence of Ge in Ge(x)Si(1-x)/Si layered alloys using trace element accelerator mass spectrometry

Date: December 11, 2000
Creator: Datar, Sameer A.; Wu, Liying; Guo, Baonian N.; Nigam, Mohit; Necsoiu, Daniela; Zhai, Y. J. et al.
Description: This article discusses high sensitivity measurement of implanted As in the presence of Ge in Ge(x)Si(1-x)/Si layered alloys using trace element accelerator mass spectrometry.
Contributing Partner: UNT College of Arts and Sciences