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Charge Collection Studies on Integrated Circuit Test Structures using Heavy-Ion Microbeams and MEDICI Simulation Calculations

Description: Ion induced charge collection dynamics within Integrated Circuits (ICs) is important due to the presence of ionizing radiation in the IC environment. As the charge signals defining data states are reduced by voltage and area scaling, the semiconductor device will naturally have a higher susceptibility to ionizing radiation induced effects. The ionizing radiation can lead to the undesired generation and migration of charge within an IC. This can alter, for example, the memory state of a bit, and… more
Date: May 2000
Creator: Guo, Baonian
Partner: UNT Libraries
open access

An Efficient Hybrid Heuristic and Probabilistic Model for the Gate Matrix Layout Problem in VLSI Design

Description: In this thesis, the gate matrix layout problem in VLSI design is considered where the goal is to minimize the number of tracks required to layout a given circuit and a taxonomy of approaches to its solution is presented. An efficient hybrid heuristic is also proposed for this combinatorial optimization problem, which is based on the combination of probabilistic hill-climbing technique and greedy method. This heuristic is tested experimentally with respect to four existing algorithms. As test ca… more
Date: August 1993
Creator: Bagchi, Tanuj
Partner: UNT Libraries
open access

An Interactive Framework for Teaching Fundamentals of Digital Logic Design and VLSI Design

Description: Integrated Circuits (ICs) have a broad range of applications in healthcare, military, consumer electronics etc. The acronym VLSI stands for Very Large Scale Integration and is a process of making ICs by placing millions of transistors on a single chip. Because of advancements in VLSI design technologies, ICs are getting smaller, faster in speed and more efficient, making personal devices handy, and with more features. In this thesis work an interactive framework is designed in which the fundame… more
Date: August 2014
Creator: Battina, Brahmasree
Partner: UNT Libraries
open access

Microstructure Studies of Silicon-on-Insulator for Very Large Scale Integrated Circuit Applications

Description: Silicon-on-insulator formed by high dose oxygen ion implantation and subsequent epitaxially grown silicon layers were studied and compared with silicon on sapphire materials. Czochralski grown, (100) silicon wafers were implanted with molecular oxygen ions, 0+2, to a total dose of 2.12 x 10^18 0+/cm^2 at an energy of 150 keV/atom.
Date: December 1982
Creator: Hamdi, Aboud Helal
Partner: UNT Libraries
open access

A Materials Approach to Silicon Wafer Level Contamination Issues from the Wet Clean Process

Description: Semiconductor devices are built using hyperpure silicon and very controlled levels of doping to create desired electrical properties. Contamination can alter these precisely controlled electrical properties that can render the device non-functional or unreliable. It is desirable to determine what impurities impact the device and control them. This study consists of four parts: a) determination of acceptable SCI (Standard Clean 1) bath contamination levels using VPD-DSE-GFAAS (Vapor Phase Decomp… more
Date: December 1996
Creator: Hall, Lindsey H. (Lindsey Harrison)
Partner: UNT Libraries
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