Unexpected Structures for Intercalation of Sodium in Epitaxial Graphene-SiC Interfaces

Unexpected Structures for Intercalation of Sodium in Epitaxial Graphene-SiC Interfaces

Date: February 2012
Creator: Sandin, Andreas; Jayasekera, Thushari; Rowe, J. E.; Kim, Ki Wook; Buongiorno Nardelli, Marco & Dougherty, Daniel B.
Description: In this paper, the authors show using scanning tunneling microscopy, spectroscopy, and ab initio calculations that several intercalation structures exist for Na in epitaxial graphene on SiC(0001). Intercalation takes place at room temperature and Na electron-dopes the graphene. It intercalates in-between single-layer graphene and the carbon-rich interfacial layer. It also penetrates beneath the interfacial layer and decouples it to form a second graphene layer. This decoupling is accelerated by annealing and is verified by direct Na deposition onto the interface layer. The authors' observations show that intercalation in graphene is fundamentally different than in graphite and is a versatile means of electronic control.
Contributing Partner: UNT College of Arts and Sciences
Charge transfer equilibria in ambient-exposed epitaxial graphene on (0001) 6 H-SiC

Charge transfer equilibria in ambient-exposed epitaxial graphene on (0001) 6 H-SiC

Date: June 5, 2012
Creator: Sidorov, Anton N.; Gaskill, D. Kurt.; Buongiorno Nardelli, Marco; Tedesco, Joseph L.; Myers-Ward, Rachel L.; Eddy, Charles R. et al.
Description: Article discussing research on charge transfer equilibria in ambient-exposed epitaxial graphene on (0001) 6 H-SiC.
Contributing Partner: UNT College of Arts and Sciences
Phonon engineering in nanostructures: Controlling interfacial thermal resistance in multilayer-graphene/dielectric heterojunctions

Phonon engineering in nanostructures: Controlling interfacial thermal resistance in multilayer-graphene/dielectric heterojunctions

Date: September 13, 2012
Creator: Mao, R.; Kong, Byoung Don; Kim, Ki Wook; Jayasekera, Thushari; Calzolari, Arrigo & Buongiorno Nardelli, Marco
Description: Article discussing phonon engineering in nanostructures and controlling interfacial thermal resistance in multilayer-graphene/dielectric heterojunctions.
Contributing Partner: UNT College of Arts and Sciences
Multiple coexisting intercalation structures of sodium in epitaxial graphene-SiC interfaces

Multiple coexisting intercalation structures of sodium in epitaxial graphene-SiC interfaces

Date: March 9, 2012
Creator: Sandin, Andreas; Jayasekera, Thushari; Rowe, J. E.; Kim, Ki Wook; Buongiorno Nardelli, Marco & Dougherty, Daniel B.
Description: This article discusses multiple coexisting intercalation structures of sodium in peitaxial graphene-SiC interfaces.
Contributing Partner: UNT College of Arts and Sciences
Electronic properties of the graphene/6H-SiC(0001̅ ) interface: A first-principles study

Electronic properties of the graphene/6H-SiC(0001̅ ) interface: A first-principles study

Date: July 27, 2011
Creator: Jayasekera, Thushari; Xu, Shu; Kim, Ki Wook & Buongiorno Nardelli, Marco
Description: This article discusses electronic properties of the graphene/6H-SiC(0001̅) interface.
Contributing Partner: UNT College of Arts and Sciences
Brittle and Ductile Behavior in Carbon Nanotubes

Brittle and Ductile Behavior in Carbon Nanotubes

Date: November 23, 1998
Creator: Buongiorno Nardelli, Marco; Yakobson, Boris I. & Bernholc, Jerry
Description: Article discussing research on the response of carbon nanotubes to a tensile load.
Contributing Partner: UNT College of Arts and Sciences
First-principles analysis of electron-phonon interactions in graphene

First-principles analysis of electron-phonon interactions in graphene

Date: March 16, 2010
Creator: Borysenko, Kostyantyn M.; Mullen, Jeffrey T.; Barry, E. A.; Paul, S.; Semenov, Yuriy G.; Zavada, J. M. et al.
Description: Article on first-principles analysis of electron-phonon interactions in graphene.
Contributing Partner: UNT College of Arts and Sciences
On the mechanism for plasma hydrogenation of graphene

On the mechanism for plasma hydrogenation of graphene

Date: December 6, 2010
Creator: Jones, Jason D.; Hoffmann, William D.; Jesseph, Aaron V.; Morris, Christopher; Verbeck, Guido F. & Pérez, José M.
Description: This article discusses the mechanism for plasma hydrogenation of graphene.
Contributing Partner: UNT College of Arts and Sciences
Graphene Formation on Dielectrics and Electronic Devices Formed Therefrom

Graphene Formation on Dielectrics and Electronic Devices Formed Therefrom

Date: December 29, 2010
Creator: Kelber, Jeffry A.; Gaddam, Sneha Sen & Bjelkevig, Cameron L.
Description: Patent relating to graphene formation on dielectrics and electronic devices formed therefrom.
Contributing Partner: UNT College of Arts and Sciences
Methods of Forming Graphene/(Multilayer) Boron Nitride for Electronic Device Applications

Methods of Forming Graphene/(Multilayer) Boron Nitride for Electronic Device Applications

Date: August 18, 2009
Creator: Kelber, Jeffry A.
Description: Patent relating to methods of forming graphene/(multilayer) boron nitride for electronic device applications.
Contributing Partner: UNT College of Arts and Sciences
Graphene/(Multilayer) Boron Nitride Heteroepitaxy for Electronic Device Applications

Graphene/(Multilayer) Boron Nitride Heteroepitaxy for Electronic Device Applications

Date: September 23, 2011
Creator: Kelber, Jeffry A.
Description: Patent relating to graphene/(multilayer) boron nitride heteroepitaxy for electronic device applications.
Contributing Partner: UNT College of Arts and Sciences
Biocompatible Graphene-based Growth of Cancer Cells: A Work in Progress

Biocompatible Graphene-based Growth of Cancer Cells: A Work in Progress

Date: April 19, 2012
Creator: Parks, Melissa & Verrill, Diane
Description: Poster presentation for the 2012 University Scholars Day at the University of North Texas. This poster discusses research on the biocompatible graphene-based growth of cancer cells. Graphene is made of a single layer of carbon atoms. Recently is has been used to successfully differentiate stem cells in neural cells.
Contributing Partner: UNT Honors College
The Effects of Residual Gases on the Field Emission Properties of ZnO, GaN, ZnS Nanostructures, and the Effects of Light on the Resistivity of Graphene

The Effects of Residual Gases on the Field Emission Properties of ZnO, GaN, ZnS Nanostructures, and the Effects of Light on the Resistivity of Graphene

Date: May 2014
Creator: Mo, Yudong
Description: In this dissertation, I present that at a vacuum of 3×10-7 Torr, residual O2, CO2, H2 and Ar exposure do not significantly degrade the field emission (FE) properties of ZnO nanorods, but N2 exposure significantly does. I propose that this could be due to the dissociation of N2 into atomic nitrogen species and the reaction of such species with ZnO. I also present the effects of O2, CO2, H2O, N2, H2, and Ar residual gas exposure on the FE properties of GaN and ZnS nanostructure. A brief review of growth of ZnO, GaN and ZnS is provided. In addition, Cs deposition on GaN nanostructures at ultra-high vacuum results in 30% decrease in turn-on voltage and 60% in work function. The improvement in FE properties could be due to a Cs-induced space-charge layer at the surface that reduces the barrier for FE and lowers the work function. I describe a new phenomenon, in which the resistivity of CVD-grown graphene increases to a higher saturated value under light exposure, and depends on the wavelength of the light—the shorter the wavelength, the higher the resistivity. First-principle calculations and theoretical analysis based on density functional theory show that (1) a water molecule close to ...
Contributing Partner: UNT Libraries