Nano-crystallization Inhibition in 5 Nm Ru Film Diffusion Barriers for Advanced Cu-interconnect
Description:
As the semiconductor industries are moving beyond 22 nm node technology, the currently used stacked Ta/TaN diffusion barrier including a copper seed will be unable to fulfill the requirements for the future technologies. Due to its low resistivity and ability to perform galvanic copper fill without a seed layer, ruthenium (Ru) has emerged as a potential copper diffusion barrier. However, its crystallization and columnar nanostructure have been the main cause of barrier failures even at low proc…
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Date:
December 2013
Creator:
Sharma, Bed P.
Partner:
UNT Libraries