Trapping of hydrogen in Hf-based high κ dielectric thin films for advanced CMOS applications.
Description:
In recent years, advanced high κ gate dielectrics are under serious consideration to replace SiO2 and SiON in semiconductor industry. Hafnium-based dielectrics such as hafnium oxides, oxynitrides and Hf-based silicates/nitrided silicates are emerging as some of the most promising alternatives to SiO2/SiON gate dielectrics in complementary metal oxide semiconductor (CMOS) devices. Extensive efforts have been taken to understand the effects of hydrogen impurities in semiconductors and its behavi…
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Date:
December 2007
Creator:
Ukirde, Vaishali
Partner:
UNT Libraries