Hit 'em with copper, zinc, lead.

Hit 'em with copper, zinc, lead.

Date: [1942]
Creator: Kirby, Rollin, 1875-1952.
Description: Black and white cartoon of Uncle Sam and a miner. Miner: "Gosh, I would like to take a crack at those Japs!" Uncle Sam: "You're doin' it every day - with every ton of ore you mine to make tanks, planes and guns"
Contributing Partner: UNT Libraries Government Documents Department
The Electrodeposition of Zinc

The Electrodeposition of Zinc

Date: August 1939
Creator: Flanagin, Charles E.
Description: This thesis examines the use of zinc for electroplating and compares its use to other metals. Experiments conducted to gather data indicated circumstances which resulted in optimal results.
Contributing Partner: UNT Libraries
Nuclear Reactions on the Palladium Isotopes

Nuclear Reactions on the Palladium Isotopes

Date: December 1970
Creator: White, Ronald Lee
Description: The problem of interest in this investigation was to determine the cross sections of five nuclear reactions which occur when irradiating natural palladium with neutrons which have energy values of 15.1, 15.9, and 16.3 MeV. The cross sections were measured relative to a copper monitor which was "sandwitched" in with the palladium target.
Contributing Partner: UNT Libraries
Natural Ventilation of Michigan Copper Mines

Natural Ventilation of Michigan Copper Mines

Date: 1932
Creator: McElroy, G. E.
Description: Technical paper issued by the Bureau of Mines over the ventilation of copper mines in Michigan. Natural ventilation of the mines and mining conditions are discussed. This report includes tables, maps, and illustrations.
Contributing Partner: UNT Libraries Government Documents Department
The Electrical Conductivity of Commercial Copper

The Electrical Conductivity of Commercial Copper

Date: 1911
Creator: Wolff, F. A. & Dellinger, J. H.
Description: Report issued by the Bureau of Standards over the conductivity of copper. Samples of commercial copper were studied, and the results are presented and discussed. This report includes tables, illustrations, and photographs.
Contributing Partner: UNT Libraries Government Documents Department
Study of Interactions Between Diffusion Barrier Layers and Low-k Dielectric Materials for Copper/Low-k Integration

Study of Interactions Between Diffusion Barrier Layers and Low-k Dielectric Materials for Copper/Low-k Integration

Date: December 2003
Creator: Tong, Jinhong
Description: The shift to the Cu/low-k interconnect scheme requires the development of diffusion barrier/adhesion promoter materials that provide excellent performance in preventing the diffusion and intermixing of Cu into the adjacent dielectrics. The integration of Cu with low-k materials may decrease RC delays in signal propagation but pose additional problems because such materials are often porous and contain significant amounts of carbon. Therefore barrier metal diffusion into the dielectric and the formation of interfacial carbides and oxides are of significant concern. The objective of the present research is to investigate the fundamental surface interactions between diffusion barriers and various low-k dielectric materials. Two major diffusion barriers¾ tatalum (Ta) and titanium nitride (TiN) are prepared by DC magnetron sputtering and metal-organic chemical vapor deposition (MOCVD), respectively. Surface analytical techniques, such as X-ray photoelectronic spectroscopy (XPS), transmission electron microscopy (TEM), and atomic force microscopy (AFM) are employed. Ta sputter-deposited onto a Si-O-C low dielectric constant substrate forms a reaction layer composed of Ta oxide and TaC. The composition of the reaction layer varies with deposition rate (1 Å-min-1 vs. 2 Å-sec-1), but in both cases, the thickness of the TaC layer is found to be at least 30 Å on the basis of ...
Contributing Partner: UNT Libraries
Metallization and Modification of Low-k Dielectric Materials

Metallization and Modification of Low-k Dielectric Materials

Date: December 2008
Creator: Martini, David M.
Description: Aluminum was deposited onto both Teflon AF and Parylene AF surfaces by chemical vapor deposition of trimethylaluminum. This work shows that similar thin film (100 Angstroms) aluminum oxide adlayers form on both polymers at the low temperature dosing conditions used in the studies. Upon anneal to room temperature and above, defluorination of the polymer surfaces increased and resulted in fluorinated aluminum oxide adlayers; the adlayers were thermally stable to the highest temperatures tested (600 K). Angle-resolved spectra showed higher levels of fluorination toward the polymer/adlayer interface region. Copper films were also deposited at low temperature onto Teflon AF using a copper hexafluoroacetylacetonate-cyclooctadiene precursor. Annealing up to 600 K resulted in the loss of precursor ligands and a shift to metallic copper. As with aluminum adlayers, some polymer defluorination and resulting metal (copper) fluoride was detected. Parylene AF and polystyrene films surfaces were modified by directly dosing with water vapor passed across a hot tungsten filament. Oxygen incorporation into polystyrene occurred exclusively at aromatic carbon sites, whereas oxygen incorporation into parylene occurred in both aromatic and aliphatic sites. Oxygen x-ray photoelectron spectra of the modified polymers were comparable, indicating that similar reactions occurred. The surface oxygenation of parylene allowed enhanced reactivity ...
Contributing Partner: UNT Libraries
ReSource, Volume 15, 2004

ReSource, Volume 15, 2004

Date: 2004
Creator: University of North Texas
Description: ReSource magazine includes articles and notes about research at University of North Texas in various academic fields.
Contributing Partner: University Relations, Communications & Marketing department for UNT
Forms in Space

Forms in Space

Access: Use of this item is restricted to the UNT Community.
Date: 1924~
Creator: Storrs, John Bradley
Description: None
Contributing Partner: UNT College of Visual Arts + Design
Aluminum and Copper Chemical Vapor Deposition on Fluoropolymer Dielectrics and Subsequent Interfacial Interactions

Aluminum and Copper Chemical Vapor Deposition on Fluoropolymer Dielectrics and Subsequent Interfacial Interactions

Date: December 1997
Creator: Sutcliffe, Ronald David
Description: This study is an investigation of the chemical vapor deposition (CVD) of aluminum and copper on fluoropolymer surfaces and the subsequent interfacial interactions.
Contributing Partner: UNT Libraries
FIRST PREV 1 2 3 4 NEXT LAST