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open access

Tantalum- and ruthenium-based diffusion barriers/adhesion promoters for copper/silicon dioxide and copper/low κ integration.

Description: The TaSiO6 films, ~8Å thick, were formed by sputter deposition of Ta onto ultrathin SiO2 substrates at 300 K, followed by annealing to 600 K in 2 torr O2. X-ray photoelectron spectroscopy (XPS) measurements of the films yielded a Si(2p) binding energy at 102.1 eV and Ta(4f7/2) binding energy at 26.2 eV, indicative of Ta silicate formation. O(1s) spectra indicate that the film is substantially hydroxylated. Annealing the film to > 900 K in UHV resulted in silicate decomposition to SiO2 and Ta2… more
Date: December 2004
Creator: Zhao, Xiaopeng
Partner: UNT Libraries

Electrodeposition of adherent copper film on unmodified tungsten.

Description: Adherent Cu films were electrodeposited onto polycrystalline W foils from purged solutions of 0.05 M CuSO4 in H2SO4 supporting electrolyte and 0.025 M CuCO3∙Cu(OH)2 in 0.32 M H3BO3 and corresponding HBF4 supporting electrolyte, both at pH = 1. Films were deposited under constant potential conditions at voltages between -0.6 V and -0.2 V vs Ag/AgCl. All films produced by pulses of 10 s duration were visible to the eye, copper colored, and survived a crude test called "the Scotch tape test", … more
Access: Restricted to the UNT Community Members at a UNT Libraries Location.
Date: May 2004
Creator: Wang, Chen
Partner: UNT Libraries

Interfacial Electrochemistry of Metal Nanoparticles Formation on Diamond and Copper Electroplating on Ruthenium Surface

Description: An extremely facile and novel method called spontaneous deposition, to deposit noble metal nanoparticles on a most stable form of carbon (C) i.e. diamond is presented. Nanometer sized particles of such metals as platinum (Pt), palladium (Pd), gold (Au), copper (Cu) and silver (Ag) could be deposited on boron-doped (B-doped) polycrystalline diamond films grown on silicon (Si) substrates, by simply immersing the diamond/Si sample in hydrofluoric acid (HF) solution containing ions of the correspon… more
Access: Restricted to the UNT Community Members at a UNT Libraries Location.
Date: May 2003
Creator: Arunagiri, Tiruchirapalli Natarajan
Partner: UNT Libraries

Cu Electrodeposition on Ru with a Chemisorbed Iodine Surface Layer.

Description: An iodine surface layer has been prepared on Ru(poly) and Ru(0001) electrodes by exposure to iodine vapor in UHV and polarizing in a 0.1 M HClO4/0.005 M KI solution, respectively. A saturation coverage of I on a Ru(poly) electrode passivates the Ru surface against significant hydroxide, chemisorbed oxygen or oxide formation during exposure to water vapor over an electrochemical cell in a UHV-electrochemistry transfer system. Immersion of I-Ru(poly) results in greater hydroxide and chemisorbed o… more
Access: Restricted to the UNT Community Members at a UNT Libraries Location.
Date: August 2005
Creator: Lei, Jipu
Partner: UNT Libraries

The Revival of Electrochemistry: Electrochemical Deposition of Metals in Semiconductor Related Research

Description: Adherent Cu films were electrodeposited onto polycrystalline W foils from purged solutions of 0.05 M CuSO4 in H2SO4 supporting electrolyte and 0.025 M CuCO3∙Cu(OH)2 in 0.32 M H3BO3 and corresponding HBF4 supporting electrolyte, both at pH = 1. Films were deposited under constant potential conditions at voltages between -0.6 V and -0.2 V versus Ag/AgCl. All films produced by pulses of 10 s duration were visible to the eye, copper colored, and survived a crude test called "the Scotch tape test… more
Access: Restricted to the UNT Community Members at a UNT Libraries Location.
Date: August 2005
Creator: Wang, Chen
Partner: UNT Libraries
open access

FTIR-ATR Characterization of Hydrogel, Polymer Films, Protein Immobilization and Benzotriazole Adsorption on Copper Surface

Description: Plasma polymerization techniques were used to synthesize and deposit hydrogel on silicon (Si) substrate. Hydrogel is a network of polymer chains that are water-insoluble and has a high degree of flexibility. The various fields of applications of hydrogel include drug release, biosensors and tissue engineering etc. Hydrogel synthesized from different monomers possess a common property of moisture absorption. In this work two monomers were used namely 1-amino-2-propanol (1A2P) and 2(ethylamin… more
Date: December 2007
Creator: Pillai, Karthikeyan
Partner: UNT Libraries
open access

Study of Interactions Between Diffusion Barrier Layers and Low-k Dielectric Materials for Copper/Low-k Integration

Description: The shift to the Cu/low-k interconnect scheme requires the development of diffusion barrier/adhesion promoter materials that provide excellent performance in preventing the diffusion and intermixing of Cu into the adjacent dielectrics. The integration of Cu with low-k materials may decrease RC delays in signal propagation but pose additional problems because such materials are often porous and contain significant amounts of carbon. Therefore barrier metal diffusion into the dielectric and the… more
Date: December 2003
Creator: Tong, Jinhong
Partner: UNT Libraries
open access

Interfacial Electrochemistry and Surface Characterization: Hydrogen Terminated Silicon, Electrolessly Deposited Palladium & Platinum on Pyrolyzed Photoresist Films and Electrodeposited Copper on Iridium

Description: Hydrogen terminated silicon surfaces play an important role in the integrated circuit (IC) industry. Ultra-pure water is extensively used for the cleaning and surface preparation of silicon surfaces. This work studies the effects of ultra-pure water on hydrogen passivated silicon surfaces in a short time frame of 120 minutes using fourier transform infrared spectroscopy – attenuated total reflection techniques. Varying conditions of ultra-pure water are used. This includes dissolved oxygen poor… more
Date: December 2003
Creator: Chan, Raymond
Partner: UNT Libraries
open access

Process Evaluation and Characterization of Tungsten Nitride as a Diffusion Barrier for Copper Interconnect Technology

Description: The integration of copper (Cu) and dielectric materials has been outlined in the International Technology Roadmap for Semiconductors (ITRS) as a critical goal for future microelectronic devices. A necessity toward achieving this goal is the development of diffusion barriers that resolve the Cu and dielectric incompatibility. The focus of this research examines the potential use of tungsten nitride as a diffusion barrier by characterizing the interfacial properties with Cu and evaluating its p… more
Date: August 2005
Creator: Ekstrom, Bradley Mitsuharu
Partner: UNT Libraries
open access

Study of Ruthenium and Ruthenium Oxide's Electrochemical Properties and Application as a Copper Diffusion Barrier

Description: As a very promising material of copper diffusion barrier for next generation microelectronics, Ru has already obtained a considerable attention recently. In this dissertation, we investigated ruthenium and ruthenium oxide electrochemical properties and the application as a copper diffusion barrier. Cu under potential deposition (UPD) on the RuOx formed electrochemically was first observed. Strong binding interaction, manifesting by the observed Cu UPD process, exists between Cu and Ru as well … more
Date: August 2005
Creator: Zhang, Yibin
Partner: UNT Libraries
open access

Fundamental Studies of Copper Bimetallic Corrosion in Ultra Large Scale Interconnect Fabrication Process

Description: In this work, copper bimetallic corrosion and inhibition in ultra large scale interconnect fabrication process is explored. Corrosion behavior of physical vapor deposited (PVD) copper on ruthenium on acidic and alkaline solutions was investigated with and without organic inhibitors. Bimetallic corrosion screening experiments were carried out to determine the corrosion rate. Potentiodynamic polarization experiments yielded information on the galvanic couples and also corrosion rates. XPS and FTI… more
Date: May 2014
Creator: Koskey, Simon Kibet
Partner: UNT Libraries
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