A Study of Atomic Ordering in III-V Semiconductors

A Study of Atomic Ordering in III-V Semiconductors

Date: Summer 2002
Creator: Cottier, Ryan J.
Description: Thesis written by a student in the UNT Honors College discussing semiconductors and band structure, the temperature-induced variation of the band structure, the atomic structure of III-V materials, atomic ordering of the band structure, and experimental techniques regarding atomic ordering of CuPt-B.
Contributing Partner: UNT Honors College
Magnetotransport Properties of  AlxIn1-xAsySb1-y/GaSb and Optical Properties of GaAs1-xSbx

Magnetotransport Properties of AlxIn1-xAsySb1-y/GaSb and Optical Properties of GaAs1-xSbx

Date: May 2003
Creator: Lukic- Zrnic, Reiko
Description: Multilayer structures of AlxIn1-xAsySb1-y/GaSb (0.37 £ x £ 0.43, 0.50 £ y £ 0.52), grown by molecular beam epitaxy on GaSb (100) substrates were characterized using variable temperature Hall and Shubnikov-de Haas techniques. For nominally undoped structures both p and n-type conductivity was observed. The mobilities obtained were lower than those predicted by an interpolation method using the binary alloys; therefore, a detailed analysis of mobility versus temperature data was performed to extract the appropriate scattering mechanisms. For p-type samples, the dominant mechanism was ionized impurity scattering at low temperatures and polar optical phonon scattering at higher temperatures. For n-type samples, ionized impurity scattering was predominant at low temperatures, and electron-hole scattering dominated for both the intermediate and high temperature range. Analyses of the Shubnikov-de Haas data indicate the presence of 2-D carrier confinement consistent with energy subbands in GaAszSb1-z potential wells. Epilayers of GaAs1-xSbx (0.19<x<0.71), grown by MBE on semi-insulating GaAs with various substrate orientations, were studied by absorption measurements over the temperature range of 4-300 K. The various substrate orientations were chosen to induce different degrees of spontaneous atomic ordering. The temperature dependence of the energy gap (Eg) for each of these samples was modeled using three semi-empirical ...
Contributing Partner: UNT Libraries