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Modeling and Optimization of Deflection Slits for Fast-Pulsing a Low Energy Ion Beam
Paper discusses an experiment that a set of deflection slits for fast-pulsing a keV ion beam.
Theoretical Study of Second Harmonic Generation of a Blue Laser at 486 nm Using a BBO Crystal in a Standing Wave Buildup Cavity
For a spectroscopy purpose, we are interested in producing continuous wave (CW) UV laser light at 243 nm with at least 2 mW power. The theory of nonlinear optics suggests that we should be able to produce a desired 2.9 mW of 243 nm light by second harmonic generation (SHG) from a 50 mW blue laser at 486 nm using a BBO crystal in a build up cavity. The most important physical parameters are calculated. A 10 mm Brewster cut BBO crystal can provide phase matching conditions for coupling two ordinary photons at 486 nm and make a secondary beam at 243 nm. The single pass conversion efficiency is calculated not to be enough to generate 2.9 mW of SH light. My investigation shows that a standing wave build up cavity can provide a buildup factor of 94 and an overall conversion efficiency of 5.9% if one use an input coupler mirror with 1.1% transmission at 486 nm.
Modeling and Optimization of Deflection Slits for Fast-Pulsing a Low Energy Ion Beam
Honors thesis written by a student in the UNT Honors College discussing the deflection of ion beams to simulate ion flight.
Interaction of Plasmons and Excitons for Low-Dimension Semiconductors
The effects of surface plasmon for InGaN/GaN multi-quantum wells and ZnO nanoparticles optical linear and nonlinear emission efficiency had been experimentally studied. Due to the critical design for InGaN MQWs with inverted hexagonal pits based on GaN, both contribution of surface plasmon effect and image charge effect at resonant and off resonant frequencies were experimentally and theoretically investigated. With off- resonant condition, the InGaN MQWs emission significantly enhanced by metal nanoparticles. This enhancement was caused by the image charge effect, due to the accumulation of carriers to NPs region. When InGaN emission resonated with metal particles SP modes, surface Plasmon effect dominated the emission process. We also studied the surface plasmon effect for ZnO nanoparticles nonlinear optical processes, SHG and TPE. Defect level emission had more contribution at high incident intensity. Emissions are different for pumping deep into the bulk and near surface. A new assumption to increase the TPE efficiency was studied. We thought by using Au nanorods localized surface plasmon mode to couple the ZnO virtual state, the virtual state’s life time would be longer and experimentally lead the emission enhancement. We studied the TPE phenomena at high and near band gap energy. Both emission intensity and decay time results support our assumption. Theoretically, the carriers dynamic mechanism need further studies.
Atomistic Studies of Point Defect Migration Rates in the Iron-Chromium System
Generation and migration of helium and other point defects under irradiation causes ferritic steels based on the Fe-Cr system to age and fail. This is motivation to study point defect migration and the He equation of state using atomistic simulations due to the steels' use in future reactors. A new potential for the Fe-Cr-He system developed by collaborators at the Lawrence Livermore National Laboratory was validated using published experimental data. The results for the He equation of state agree well with experimental data. The activation energies for the migration of He- and Fe-interstitials in varying compositions of Fe-Cr lattices agree well with prior work. This research did not find a strong correlation between lattice ordering and interstitial migration energy
Precision measurements of the hyperfine structure in the 23P state of 3He.
The unusually large hyperfine structure splittings in the 23P state of the 3He isotope is measured using electro-optic techniques with high precision laser spectroscopy. Originally designed to probe the fine structure of the 4He atom, this experimental setup along with special modifications I implemented to resolve certain 3He related issues has made possible new high precision hyperfine structure measurements. Discussed are the details of the experimental setup and the modifications, including in depth information necessary to consider while performing these measurements. The results of these hyperfine structure measurements give an order of magnitude improvement in precision over the best previously reported values.
Surface Segregation in Multi-component Systems: Modeling Binary Ni-Al Alloys Using the BFS Method
Although the study of surface segregation has a great technological importance, the work done in the field was for a long time largely restricted to experimental studies and the theoretical work was neglected. However, recent improvements in both first principles and semi-empirical methods are opening a new era for surface scientists. A method developed by Bozzolo, Ferrante, and Smith (BFS) is particularly suitable for complex systems and several aspects of the computational modeling of surfaces and segregation, including alloy surface segregation, structure and composition of alloy surfaces and the formation of surface alloys. In the following work I introduce the BFS method and apply it to model the Ni-Al alloy through a Monte-Carlo simulation. A comparison between my results and those results published by the group mentioned above was my goal. This thesis also includes a detailed explanation of the application of the BFS method to surfaces of multi-component metallic systems, beyond binary alloys.
Characterization, Properties and Applications of Novel Nanostructured Hydrogels.
The characterization, properties and applications of the novel nanostructured microgel (nanoparticle network and microgel crystal) composed of poly-N-isopropylacrylanmide-co-allylamine (PNIPAM-co-allylamine) and PNIPAM-co-acrylic acid(AA) have been investigated. For the novel nanostructured hydrogels with the two levels of structure: the primary network inside each individual particle and the secondary network of the crosslinked nanoparticles, the new shear modulus, drug release law from hydrogel with heterogeneous structure have been studied. The successful method for calculating the volume fraction related the phase transition of colloid have been obtained. The kinetics of crystallization in an aqueous dispersion of PNIPAM particles has been explored using UV-visible transmission spectroscopy. This dissertation also includes the initial research on the melting behavior of colloidal crystals composed of PNIPAM microgels. Many new findings in this study area have never been reported before. The theoretical model for the columnar crystal growth from the top to bottom of PNIPAM microgel has been built, which explains the growth mechanism of the novel columnar hydrogel colloidal crystals. Since the unique structure of the novel nanostructured hydrogels, their properties are different with the conventional hydrogels and the hard-sphere-like system. The studies and results in this dissertation have the important significant for theoretical study and valuable application of these novel nanostructured hydrogels.
Electrostatic Effects in III-V Semiconductor Based Metal-optical Nanostructures
The modification of the band edge or emission energy of semiconductor quantum well light emitters due to image charge induced phenomenon is an emerging field of study. This effect observed in quantum well light emitters is critical for all metal-optics based light emitters including plasmonics, or nanometallic electrode based light emitters. This dissertation presents, for the first time, a systematic study of the image charge effect on semiconductor–metal systems. the necessity of introducing the image charge interactions is demonstrated by experiments and mathematical methods for semiconductor-metal image charge interactions are introduced and developed.
Theoretical and Experimental Investigations Concerning Microgels of Varied Spherical Geometries
Polymer gels have been studied extensively due to their ability to simulate biological tissues and to swell or collapse reversibly in response to external stimuli. This work presents a variety of studies using poly-N-isopropylacrylamide (PNIPA) hydrogels. The projects have been carried out both in the lab of Dr. Zhibing Hu and in collaboration with others outside of UNT: (1) an analysis of the swelling kinetics of microgel spherical shells prepared using a novel design of microfluidic devices; (2) a comparison of the drug-release rates between nanoparticle structures having either core or core-with-shell (core-shell) designs; (3) an investigation into the thermodynamics of swelling for microgels of exceedingly small size.
Temporal Complexity and Stochastic Central Limit Theorem
Complex processes whose evolution in time rests on the occurrence of a large and random number of intermittent events are the systems under study. The mean time distance between two consecutive events is infinite, thereby violating the ergodic condition and activating at the same time a stochastic central limit theorem that explains why the Mittag-Leffler function is a universal property of nature. The time evolution of these complex systems is properly generated by means of fractional differential equations, thus leading to the interpretation of fractional trajectories as the average over many random trajectories, each of which fits the stochastic central limit theorem and the condition for the Mittag-Leffler universality. Additionally, the effect of noise on the generation of the Mittag-Leffler function is discussed. Fluctuations of relatively weak intensity can conceal the asymptotic inverse power law behavior of the Mittag-Leffler function, providing a reason why stretched exponentials are frequently found in nature. These results afford a more unified picture of complexity resting on the Mittag-Leffler function and encompassing the standard inverse power law definition.
The Effects of Cesium Deposition and Gas Exposure on the Field Emission Properties of Single Wall and Multiwall Carbon Nanotubes
The effects of Cs deposition on the field emission (FE) properties of single-walled carbon nanotube (SWNT) bundles were studied. In addition, a comparative study was made on the effects of O2, Ar and H2 gases on the field emission properties of SWNT bundles and multiwall carbon nanotubes (MWNTs). We observed that Cs deposition decreases the turn-on field for FE by a factor of 2.1 - 2.9 and increases the FE current by 6 orders of magnitude. After Cs deposition, the FE current versus voltage (I-V) curves showed non-Fowler-Nordheim behavior at large currents consistent with tunneling from adsorbate states. At lower currents, the ratio of the slope of the FE I-V curves before and after Cs deposition was approximately 2.1. Exposure to N2 does not decrease the FE current, while exposure to O2 decreases the FE current. Our results show that cesiated SWNT bundles have great potential as economical and reliable vacuum electron sources. We find that H2 and Ar gases do not significantly affect the FE properties of SWNTs or MWNTs. O2 temporarily reduces the FE current and increases the turn-on voltage of SWNTs. Full recovery of these properties occurred after operation in UHV. The higher operating voltages in an O2 environment caused a permanent decrease of FE current and increase in turn-on field of MWNTs. The ratios of the slopes before and after O2 exposure were approximately 1.04 and 0.82 for SWNTs and MWNTs, respectively. SWNTs compared to MWNTs would appear to make more economical and reliable vacuum electron sources.
Fractional Brownian motion and dynamic approach to complexity.
The dynamic approach to fractional Brownian motion (FBM) establishes a link between non-Poisson renewal process with abrupt jumps resetting to zero the system's memory and correlated dynamic processes, whose individual trajectories keep a non-vanishing memory of their past time evolution. It is well known that the recrossing times of the origin by an ordinary 1D diffusion trajectory generates a distribution of time distances between two consecutive origin recrossing times with an inverse power law with index m=1.5. However, with theoretical and numerical arguments, it is proved that this is the special case of a more general condition, insofar as the recrossing times produced by the dynamic FBM generates process with m=2-H. Later, the model of ballistic deposition is studied, which is as a simple way to establish cooperation among the columns of a growing surface, to show that cooperation generates memory properties and, at same time, non-Poisson renewal events. Finally, the connection between trajectory and density memory is discussed, showing that the trajectory memory does not necessarily yields density memory, and density memory might be compatible with the existence of abrupt jumps resetting to zero the system's memory.
The Dynamic Foundation of Fractal Operators.
The fractal operators discussed in this dissertation are introduced in the form originally proposed in an earlier book of the candidate, which proves to be very convenient for physicists, due to its heuristic and intuitive nature. This dissertation proves that these fractal operators are the most convenient tools to address a number of problems in condensed matter, in accordance with the point of view of many other authors, and with the earlier book of the candidate. The microscopic foundation of the fractal calculus on the basis of either classical or quantum mechanics is still unknown, and the second part of this dissertation aims at this important task. This dissertation proves that the adoption of a master equation approach, and so of probabilistic as well as dynamical argument yields a satisfactory solution of the problem, as shown in a work by the candidate already published. At the same time, this dissertation shows that the foundation of Levy statistics is compatible with ordinary statistical mechanics and thermodynamics. The problem of the connection with the Kolmogorov-Sinai entropy is a delicate problem that, however, can be successfully solved. The derivation from a microscopic Liouville-like approach based on densities, however, is shown to be impossible. This dissertation, in fact, establishes the existence of a striking conflict between densities and trajectories. The third part of this dissertation is devoted to establishing the consequences of the conflict between trajectories and densities in quantum mechanics, and triggers a search for the experimental assessment of spontaneous wave-function collapses. The research work of this dissertation has been the object of several papers and two books.
EEG, Alpha Waves and Coherence
This thesis addresses some theoretical issues generated by the results of recent analysis of EEG time series proving the brain dynamics are driven by abrupt changes making them depart from the ordinary Poisson condition. These changes are renewal, unpredictable and non-ergodic. We refer to them as crucial events. How is it possible that this form of randomness be compatible with the generation of waves, for instance alpha waves, whose observation seems to suggest the opposite view the brain is characterized by surprisingly extended coherence? To shed light into this apparently irretrievable contradiction we propose a model based on a generalized form of Langevin equation under the influence of a periodic stimulus. We assume that there exist two different forms of time, a subjective form compatible with Poisson statistical physical and an objective form that is accessible to experimental observation. The transition from the former to the latter form is determined by the brain dynamics interpreted as emerging from the cooperative interaction among many units that, in the absence of cooperation would generate Poisson fluctuations. We call natural time the brain internal time and we make the assumption that in the natural time representation the time evolution of the EEG variable y(t) is determined by a Langevin equation perturbed by a periodic process that in this time representation is hardly distinguishable from an erratic process. We show that the representation of this random process in the experimental time scale is characterized by a surprisingly extended coherence. We show that this model generates a sequence of damped oscillations with a time behavior that is remarkably similar to that derived from the analysis of real EEG's. The main result of this research work is that the existence of crucial events is not incompatible with the alpha wave coherence. In addition to this important …
Magnetotransport Properties of AlxIn1-xAsySb1-y/GaSb and Optical Properties of GaAs1-xSbx
Multilayer structures of AlxIn1-xAsySb1-y/GaSb (0.37 £ x £ 0.43, 0.50 £ y £ 0.52), grown by molecular beam epitaxy on GaSb (100) substrates were characterized using variable temperature Hall and Shubnikov-de Haas techniques. For nominally undoped structures both p and n-type conductivity was observed. The mobilities obtained were lower than those predicted by an interpolation method using the binary alloys; therefore, a detailed analysis of mobility versus temperature data was performed to extract the appropriate scattering mechanisms. For p-type samples, the dominant mechanism was ionized impurity scattering at low temperatures and polar optical phonon scattering at higher temperatures. For n-type samples, ionized impurity scattering was predominant at low temperatures, and electron-hole scattering dominated for both the intermediate and high temperature range. Analyses of the Shubnikov-de Haas data indicate the presence of 2-D carrier confinement consistent with energy subbands in GaAszSb1-z potential wells. Epilayers of GaAs1-xSbx (0.19<x<0.71), grown by MBE on semi-insulating GaAs with various substrate orientations, were studied by absorption measurements over the temperature range of 4-300 K. The various substrate orientations were chosen to induce different degrees of spontaneous atomic ordering. The temperature dependence of the energy gap (Eg) for each of these samples was modeled using three semi-empirical relationships. The resulting coefficients for each model describe not only the temperature dependence of Eg for each of the alloy compositions investigated, but also for all published results for this alloy system. The effect of ordering in these samples was manifested by a deviation of the value of Eg from the value of the random alloy. The presence of CuPt-B type atomic ordering was verified by transmission electron diffraction measurements, and the order parameter was estimated for all the samples investigated and found to be larger for the samples grown on the (111) A offcut orientations. This result strongly suggests …
Complex Numbers in Quantum Theory
In 1927, Nobel prize winning physicist, E. Schrodinger, in correspondence with Ehrenfest, wrote the following about the new theory: “What is unpleasant here, and indeed directly to be objected to, is the use of complex numbers. Psi is surely fundamentally a real function.” This seemingly simple issue remains unexplained almost ninety years later. In this dissertation I elucidate the physical and theoretical origins of the complex requirement. I identify a freedom/constraint situation encountered by vectors when, employed in accordance with adopted quantum representational methodology, and representing angular momentum states in particular. Complex vectors, quite simply, provide more available adjustable variables than do real vectors. The additional variables relax the constraint situation allowing the theory’s representational program to carry through. This complex number issue, which lies at the deepest foundations of the theory, has implications for important issues located higher in the theory. For example, any unification of the classical and quantum accounts of the settled order of nature, will rest squarely on our ability to account for the introduction of the imaginary unit.
Electromagnetically Modulated Sonic Structures
Phononic crystals are structures composed of periodically arranged scatterers in a background medium that affect the transmission of elastic waves. They have garnered much interest in recent years for their macro-scale properties that can be modulated by the micro-scale components. The elastic properties of the composite materials, the contrast in the elastic properties of the composite materials, and the material arrangement all directly affect how an elastic wave will behave as it propagates through the sonic structure. The behavior of an elastic wave in a periodic structure is revealed in its transmission bandstructure, and modification of any the elastic parameters will result in tuning of the band structure. In this dissertation, a phononic crystal with properties that can be modulated using electromagnetic radiation, and more specifically, radio-frequency (RF) light will be presented.
The Interactions of Plasma with Low-k Dielectrics: Fundamental Damage and Protection Mechanisms
Nanoporous low-k dielectrics are used for integrated circuit interconnects to reduce the propagation delays, and cross talk noise between metal wires as an alternative material for SiO2. These materials, typically organosilicate glass (OSG) films, are exposed to oxygen plasmas during photoresist stripping and related processes which substantially damage the film by abstracting carbon, incorporating O and OH, eventually leading to significantly increased k values. Systematic studies have been performed to understand the oxygen plasma-induced damage mechanisms on different low-k OSG films of various porosity and pore interconnectedness. Fourier transform infrared spectroscopy, x-ray photoelectron spectroscopy and atomic force microscopy are used to understand the damage kinetics of O radicals, ultraviolet photons and charged species, and possible ways to control the carbon loss from the film. FTIR results demonstrate that O radical present in the plasma is primarily responsible for carbon abstraction and this is governed by diffusion mechanism involving interconnected film nanopores. The loss of carbon from the film can be controlled by closing the pore interconnections, He plasma pretreatment is an effective way to control the damage at longer exposure by closing the connections between the pores.
Highly Efficient Single Frequency Blue Laser Generation by Second Harmonic Generation of Infrared Lasers Using Quasi Phase Matching in Periodically Poled Ferroelectric Crystals
Performance and reliability of solid state laser diodes in the IR region exceeds those in the visible and UV part of the light spectrum. Single frequency visible and UV laser diodes with higher than 500 mW power are not available commercially. However we successfully stabilized a multi-longitudinal mode IR laser to 860 mW single frequency. This means high efficiency harmonic generation using this laser can produce visible and UV laser light not available otherwise. In this study we examined three major leading nonlinear crystals: PPMgO:SLN, PPKTP and PPMgO:SLT to generate blue light by second harmonic generation. We achieved record high net conversion efficiencies 81.3% using PPMgO:SLT (~500 mW out), and 81.1% using PPKTP (~700 mW out). In both these cases an external resonance buildup cavity was used. We also studied a less complicated single pass waveguide configuration (guided waist size of ~ 5 um compared to ~60 um) to generate blue. With PPMgO:SLN we obtained net 40.4% and using PPKT net 6.8% (110mW and 10.1 mW respectively).
Modification of Graphene Properties: Electron Induced Reversible Hydrogenation, Oxidative Etching and Layer-by-layer Thinning
In this dissertation, I present the mechanism of graphene hydrogenation via three different electron sources: scanning electron microscopy, e-beam irradiation and H2 and He plasma irradiation. in each case, hydrogenation occurs due to electron impact fragmentation of adsorbed water vapor from the sample preparation process. in the proposed model, secondary and backscattered electrons generated from incident electron interactions with the underlying silicon substrate are responsible for the dissociation of water vapor. Chemisorbed H species from the dissociation are responsible for converting graphene into hydrogenated graphene, graphane. These results may lead to higher quality graphane films having a larger band gap than currently reported. in addition, the dissertation presents a novel and scalable method of controllably removing single atomic planes from multi-layer graphene using electron irradiation from an intense He plasma under a positive sample bias. As the electronic properties or multi-layer graphene are highly dependent on the number of layers, n, reducing n in certain regions has many benefits. for example, a mask in conjunction with this thinning method could be used for device applications.
High Efficiency High Power Blue Laser by Resonant Doubling in PPKTP
I developed a high power blue laser for use in scientific and technical applications (eg. precision spectroscopy, semiconductor inspection, flow cytometry, etc). It is linearly polarized, single longitudinal and single transverse mode, and a convenient fiber coupled continuous wave (cw) laser source. My technique employs external cavity frequency doubling and provides better power and beam quality than commercially available blue diode lasers. I use a fiber Bragg grating (FBG) stabilized infrared (IR) semiconductor laser source with a polarization maintaining (PM) fiber coupled output. Using a custom made optical and mechanical design this output is coupled with a mode matching efficiency of 96% into the doubling cavity. With this carefully designed and optimized cavity, measurements were carried out at various fundamental input powers. A net efficie ncy of 81 % with an output power of 680 mW at 486 nm was obtained using 840 mW of IR input. Also I report an 87.5 % net efficiency in coupling of blue light from servo locked cavity into a single mode PM fiber. Thus I have demonstrated a total fiber to fiber efficiency of 71% can be achieved in our approach using periodically poled potassium titanyl phosphate (PPKTP). To obtain these results, all losses in the system were carefully studied and minimized.
Ultrafast Spectroscopy of Hybrid Ingan/gan Quantum Wells
Group III nitrides are efficient light emitters. The modification of internal optoelectronic properties of these materials due to strain, external or internal electric field are an area of interest. Insertion of metal nanoparticles (MNPs) (Ag, Au etc) inside the V-shaped inverted hexagonal pits (IHP) of InGaN/GaN quantum wells (QWs) offers the potential of improving the light emission efficiencies. We have observed redshift and blueshift due to the Au MNPs and Ag MNPs respectively. This shift could be due to the electric field created by the MNPs through electrostatic image charge. We have studied the ultrafast carrier dynamics of carriers in hybrid InGaN/GaN QWs. The change in quantum confinement stark effect due to MNPs plays an important role for slow and fast carrier dynamics. We have also observed the image charge effect on the ultrafast differential transmission measurement due to the MNPs. We have studied the non-linear absorption spectroscopy of these materials. The QWs behave as a discharging of a nanocapacitor for the screening of the piezoelectric field due to the photo-excited carriers. We have separated out screening and excitonic bleaching components from the main differential absorption spectra of InGaN/GaN QWs.
Enhancements of Mechanical, Thermal Stability, and Tribological Properties by Addition of Functionalized Reduced Graphene Oxide in Epoxy
The effects of octadecylamine-functionalized reduced graphene oxide (FRGO) on the frictional and wear properties of diglycidylether of bisphenol-A (DGEBA) epoxy are studied using a pin-on-disk tribometer. It was observed that the addition of FRGO significantly improves the tribological, mechanical, and thermal properties of epoxy matrix. Graphene oxide (GO) was functionalized with octadecylamine (ODA), and then reduction of oxygen-containing functional groups was carried out using hydrazine monohydrate. The Raman and x-ray photoelectron spectroscopy studies confirm significant reduction in oxygen-containing functional groups and formation of ODA functionalized reduced GO. The nanocomposites are prepared by adding 0.1, 0.2, 0.5 and 1.0 wt % of FRGO to the epoxy. The addition of FRGO increases by more than an order of magnitude the sliding distance during which the dynamic friction is ≤ 0.1. After this distance, the friction sharply increases to the range of 0.4 - 0.5. We explain the increase in sliding distance during which the friction is low by formation of a transfer film from the nanocomposite to the counterface. The wear rates in the low and high friction regimes are approximately 1.5 x 10-4 mm3/N·m and 5.5 x 10-4 mm3/N·m, respectively. The nanocomposites exhibit a 74 % increase in Young’s modulus with 0.5 wt. % of FRGO, and an increase in glass transition and thermal degradation temperatures.
Synthesis, Modification, and Analysis of Silicate Cosmic Dust Analogues Using Ion-Beam Techniques
Silicates analogous to cosmic dust were synthesized, modified, and analyzed utilizing ion-beam techniques with Rutherford backscattering spectrometry (RBS) and x-ray diffraction (XRD). Silicate dust is a common constituent in interstellar space, with an estimated 50% of dust produced in the stellar winds of M class Asymptotic Giant Branch (AGB) stars. Silicate dust acts as a surface upon which other chemicals may form (water ice for example), increasing significance in the cosmochemistry field, as well as laboratory astrophysics. Silicate formation in the stellar winds of AGB stars was simulated in the laboratory environment. Three sequential ion implantations of Fe-, MgH2-, and O- with thermal annealing were used to synthesize a mixture appropriate to silicate dust in the surface layers of a p-type Si substrate. Post implantation He+ irradiation was shown to preferentially induce crystalline formation in the analogue prior to thermal annealing. This effect is believed to originate in the ion-electron interaction in the Si substrate. The effects of ionization and ion energy loss due to electronic stopping forces is believed to precipitate nucleation in the amorphous media. For annealing temperatures of 1273 K, predominant quartz formation was found in the substrate, whereas lower annealing temperatures of 1000 K formed enstatite without post-implantation He+ irradiation, and olivine with He+ irradiation. Post annealed crystalline phase modification was investigated via x-ray diffraction and elemental compositions were investigated utilizing RBS. Finally, the interdiffusion of Fe and Mg at temperatures of 900-1100 K was investigated with RBS, and activation energies for interdiffusion were extracted for the transition from amorphous to crystalline phase in the silicate analogues. Fe had an interdiffusion energy of 1.8 eV and Mg 1.5eV. The produced analogues have similar properties to those inferred from infrared spectroscopy of the stellar winds of M-class AGB stars with an oxygen-rich outflow. This work established a …
Modeling, Characterization, and Magnetic Behavior of Transition Metal Nanosystems Synthesized in Silicon Using Low Energy Ion Implantation
Magnetic nano-clusters in silicon involving iron and cobalt were synthesized using low energy (50 keV) ion implantation technique and post-implantation thermal annealing. Before the irradiation, multiple ion-solid interaction simulations were carried out to estimate optimal ion energy and fluence for each experiment. For high-fluence low-energy irradiation of heavy ions in a relatively lighter substrate, modeling the ion irradiation process using dynamic code SDTrimSP showed better agreement with the experimental results compared to the widely used static simulation code TRIM. A saturation in concentration (~ 48%) profile of the 50 keV Fe or Co implants in Si was seen at a fluence of ~ 2 × 1017 ions/cm2. Further study showed that for structures with a curved surface, particularly for nanowires, better simulation results could be extracted using a code "Iradina" as the curve geometry of the target surface can be directly defined in the input file. The compositional, structural, and magnetic properties were studied using Rutherford backscattering spectrometry, X-ray photoelectron spectroscopy, X-ray diffraction, atom probe tomography, and vibrating sample magnetometry. Irradiation of high-current (~ 2 μA/cm2) 50 keV Fe ions into Si at a fluence of 2 × 1017 ions/cm2 showed the formation of Fe5Si3 nano structures in the near-surface region of the substrate. Post-implantation thermal annealing in vacuum at 500 οC for one hour showed a significant enhancement in structural and magnetic properties. Similar high-current irradiation of 50 keV Co with a fluence of 3.2 × 1016 ions/cm2 into Si substrate showed the formation of superparamagnetic structure even at room temperature in the as-implanted samples. The simulation results for irradiation of Co and Fe on the curved surface were validated by ion irradiation on pre-fabricated Si nano tip followed by atom probe tomography analysis.
Microwave Cavity Test for Superconductivity
The first part of this paper describes the Meissner effect in superconductors which serves as the most definitive evidence for superconductivity. It is shown that the microwave perturbation technique may be used to demonstrate this effect. By measuring the changes of resonant frequency and inverse quality factor Q of a microwave cavity with a small volume of sample loading, the Meissner effect can be shown by using the Slater perturbation equation. The experimental system is described with details and the basic principle of each component discussed. The second part of this work describes the technique employed to do the actual measurements. The experiments were conducted on samples of Gallium Arsenide (GaAs) and lead zirconate titanate (PZT) to look for the possible high temperature superconductivity properties. Results of these experiments are presented and discussed. Conclusion and suggestions to future exploration are made.
A Determination of the Fine Structure Constant Using Precision Measurements of Helium Fine Structure
Spectroscopic measurements of the helium atom are performed to high precision using an atomic beam apparatus and electro-optic laser techniques. These measurements, in addition to serving as a test of helium theory, also provide a new determination of the fine structure constant &#945;. An apparatus was designed and built to overcome limitations encountered in a previous experiment. Not only did this allow an improved level of precision but also enabled new consistency checks, including an extremely useful measurement in 3He. I discuss the details of the experimental setup along with the major changes and improvements. A new value for the J = 0 to 2 fine structure interval in the 23P state of 4He is measured to be 31 908 131.25(30) kHz. The 300 Hz precision of this result represents an improvement over previous results by more than a factor of three. Combined with the latest theoretical calculations, this yields a new determination of &#945; with better than 5 ppb uncertainty, &#945;-1 = 137.035 999 55(64).
Nested Well Plasma Traps
Criteria for the confinement of plasmas consisting of a positive and negative component in Penning type traps with nested electric potential wells are presented. Computational techniques for the self-consistent calculation of potential and plasma density distributions are developed. Analyses are presented of the use of nested well Penning traps for several applications. The analyses include: calculations of timescales relevant to the applications, e.g. reaction, confinement and relaxation timescales, self-consistent computations, and consideration of other physical phenomenon important to the applications. Possible applications of a nested well penning trap include production of high charge state ions, studies of high charge state ions, and production of antihydrogen. In addition the properties of a modified Penning trap consisting of an electric potential well applied along a radial magnetic field are explored.
Picosecond Dynamics of Free-Carrier Populations, Space-Charge Fields, and Photorefractive Nonlinearities in Zincblende Semiconductors
Generally, nonlinear optics studies investigate optically-induced changes in refraction or absorption, and their application to spectroscopy or device fabrication. The photorefractive effect is a nonlinear optical effect that occurs in solids, where transport of an optically-induced free-carrier population results in an internal space-charge field, which produces an index change via the linear electrooptic effect. The photorefractive effect has been widely studied for a variety of materials and device applications, mainly because it allows large index changes to be generated with laser beams having only a few milliwatts of average power.Compound semiconductors are important photorefractive materials because they offer a near-infrared optical response, and because their carrier transport properties allow the index change to be generated quickly and efficiently. While many researchers have attempted to measure the fundamental temporal dynamics of the photorefractive effect in semiconductors using continuous-wave, nanosecond- and picosecond-pulsed laser beams, these investigations have been unsuccessful. However, studies with this goal are of clear relevance because they provide information about the fundamental physical processes that produce this effect, as well as the material's speed and efficiency limitations for device applications.In this dissertation, for the first time, we time-resolve the temporal dynamics of the photorefractive nonlinearities in two zincblende semiconductors, semi-insulating GaAs and undoped CdTe. While CdTe offers a lattice-match to the infrared material HgxCd1-xTe, semi-insulating GaAs has been widely used in optoelectronic and high-speed electronic applications. We use a novel transient-grating experimental method that allows picosecond temporal resolution and high sensitivity. Our results provide a clear and detailed picture of the picosecond photorefractive response of both materials, showing nonlinearities due to hot-carrier transport and the Dember space-charge field, and a long-lived nonlinearity that is due to the EL2 midgap species in GaAs. We numerically model our experimental results using a general set of equations that describe nonlinear diffraction and …
Microstructural Studies of Dental Amalgams Using Analytical Transmission Electron Microscopy
Dental amalgams have been used for centuries as major restorative materials for decaying teeth. Amalgams are prepared by mixing alloy particles which contain Ag, Sn, and Cu as the major constituent elements with liquid Hg. The study of microstructure is essential in understanding the setting reactions and improving the properties of amalgams. Until the work reported in this dissertation, optical microscopy (OM), scanning electron microscopy (SEM), and x-ray diffractometry (XRD) were used commonly to analyze amalgam microstructures. No previous systematic transmission electron microscopy (TEM) study has been performed due to sample preparation difficulties and composite structure of dental amalgams. The goal of this research was to carry out detailed microstructural and compositional studies of dental amalgams. This was accomplished using the enhanced spatial resolution of the TEM and its associated microanalytical techniques, namely, scanning transmission electron microscopy (STEM), x-ray energy dispersive spectroscopy (XEDS) and micro-microdiffraction (μμD). A new method was developed for thinning amalgam samples to electron transparency using the "wedge technique." Velvalloy, a low-Cu amalgam, and Tytin, a high-Cu amalgam, were the two amalgams characterized. Velvalloy is composed of a Ag₂Hg₃ (γ₁)/HgSn₇₋₉ (γ₂) matrix surrounding unreacted Ag₃Sn (γ) particles. In addition, hitherto uncharacterized reaction layers between Ag₃Sn(γ)/Ag₂Hg₃ (γ₂) and Ag₂Hg₃ (γ₁)/HgSn₇₋₉ (γ₂) were observed and analyzed. An Ag-Hg-Sn (β₁) phase was clearly identified for the first time. In Tytin, the matrix consists of Ag₂Hg₃ (γ₁) grains. Fine precipitates of Cu₆Sn₅ (η') are embedded inside the γ₁ and at the grain boundaries. These precipitates are responsible for the improved creep resistance of Tytin compared to Velvalloy. The additional Cu has completely eliminated the γ₂ phase which is the weakest component of amalgams. Ag-Hg-Sn (β₁) and large grains of Cu₆Sn₅ (η') are found adjacent to the unreacted alloy particles. Tytin alloy particles contain Cu₃Sn (ε) precipitates in a matrix of Ag₃Sn …
Maleic anhydride grafted polypropylene coatings on steel: Adhesion and wear.
Polymeric coatings are being used in a growing number of applications, contributing to protection against weather conditions and localized corrosion, reducing the friction and erosion wear on the substrate. In this study, various polypropylene (PP) coatings were applied onto steel substrates by compression molding. Chemical modification of PP has been performed to increase its adhesion to metallic surfaces by grafting of maleic anhydride (MAH) onto PP in the presence of dicumyl peroxide (DCP). Influence of different concentrations of MAH and DCP on the properties of resulting materials have been examined. The coated steel samples are characterized by scanning electron microscopy (SEM), shear adhesion testing, FTIR and tribometry. The coatings with 3 wt. % MAH have shown the maximum adhesion strength due to maximum amount of grafting. The wear rates increased with increasing the amount of MAH due to simultaneous increase in un-reacted MAH.
Nanoscale Materials Applications: Thermoelectrical, Biological, and Optical Applications with Nanomanipulation Technology
In a sub-wavelength scale, even approaching to the atomic scale, nanoscale physics shows various novel phenomena. Since it has been named, nanoscience and nanotechnology has been employed to explore and exploit this small scale world. For example, with various functionalized features, nanowire (NW) has been making its leading position in the researches of physics, chemistry, biology, and engineering as a miniaturized building block. Its individual characteristic shows superior and unique features compared with its bulk counterpart. As one part of these research efforts and progresses, and with a part of the fulfillment of degree study, novel methodologies and device structures in nanoscale were devised and developed to show the abilities of high performing thermoelectrical, biological, and optical applications. A single β-SiC NW was characterized for its thermoelectric properties (thermal conductivity, Seebeck coefficient, and figure of merit) to compare with its bulk counterpart. The combined structure of Ag NW and ND was made to exhibit its ability of clear imaging of a fluorescent cell. And a plasmonic nanosture of silver (Ag) nanodot array and a β-SiC NW was fabricated to show a high efficient light harvesting device that allows us to make a better efficient solar cell. Novel nanomanipulation techniques were developed and employed in order to fabricate all of these measurement platforms. Additionally, one of these methodological approaches was used to successfully isolate a few layer graphene.
Broad-band Light Emission From Ion Implanted Silicon Nanocrystals Via Plasmonic and Non-plasmonic Effects for Optoelectronics
Broad band light emission ranging from the ultraviolet (UV) to the near infrared (NIR) has been observed from silicon nanoparticles fabricated using low energy (30-45 keV) metal and non-metal ion implantation with a fluence of 5*1015 ions/cm2 in crystalline Si(100). It is found from a systematic study of the annealing carried out at certain temperatures that the spectral characteristics remains unchanged except for the enhancement of light emission intensity due to annealing. The annealing results in nucleation of metal nanoclusters in the vicinity of Si nanoparticles which enhances the emission intensity. Structural and optical characterization demonstrate that the emission originates from both highly localized defect bound excitons at the Si/Sio2 interface, as well as surface and interface traps associated with the increased surface area of the Si nanocrystals. The emission in the UV is due to interband transitions from localized excitonic states at the interface of Si/SiO2 or from the surface of Si nanocrystals. The radiative efficiency of the UV emission from the Si nanoparticles can be modified by the localized surface plasmon (LSP) interaction induced by the nucleation of silver nanoparticles with controlled annealing of the samples. The UV emission from Si nanoclusters are coupled resonantly to the LSP modes. The non-resonant emission can be enhanced by electrostatic-image charge effects. The emission in the UV (~3.3 eV) region can also be significantly enhanced by electrostatic image charge effects induced by Au nanoparticles. The UV emission from Si nanoclusters, in this case, can be coupled without LSP resonance. The recombination of carriers in Si bound excitons is mediated by transverse optical phonons due to the polarization of the surface bound exciton complex. The low energy side of emission spectrum at low temperature is dominated by 1st and 2nd order phonon replicas. Broad band emission ranging from the UV to the …
Thorium and Uranium M-shell X-ray Production Cross Sections for 0.4 – 4.0 MeV Protons, 0.4 - 6.0 MeV Helium Ions, 4.5 – 11.3 MeV Carbon Ions, and 4.5 – 13.5 MeV Oxygen Ions.
The M-shell x-ray production cross section for thorium and uranium have been determined for protons of energy 0.4 - 4.0 MeV, helium ions of energy 0.4 - 6.0 MeV, carbon ions of energy 4.5 - 11.3 MeV and oxygen ions of energy 4.5 - 13.5 MeV. The total cross sections and the cross sections for individual x-ray peaks in the spectrum, consisting of the following transitions Mz (M4-N2, M5-N3, M4-N3), Ma (M5-N6,7), Mb (M4-N6, M5-O3, M4- O2), and Mg (M4-O3, M5-P3, M3-N4, M3-N5), were compared to the theoretical values determined from the PWBA + OBKN and ECUSAR. The theoretical values for the carbon and oxygen ions were also modified to take into account the effects of multiple ionizations of the target atom by the heavier ions. It is shown that the results of the ECUSAR theory tend to provide better agreement with the experimental data.
Ion Beam Synthesis of Carbon Assisted Nanosystems in Silicon Based Substrates
The systematic study of the formation of &#946;-SiC formed by low energy carbon ion (C-)implantation into Si followed by high temperature annealing is presented. The research is performed to explore the optimal annealing conditions. The formation of crystalline &#946;-SiC is clearly observed in the sample annealed at 1100 °C for a period of 1 hr. Quantitative analysis is performed in the formation of &#946;-SiC by the process of implantation of different carbon ion fluences of 1×1017, 2×1017, 5×1017, and 8×1017 atoms /cm2 at an ion energy of 65 keV into Si. It is observed that the average size of &#946;-SiC crystals decreased and the amount of &#946;-SiC crystals increased with the increase in the implanted fluences when the samples were annealed at 1100°C for 1 hr. However, it is observed that the amount of &#946;-SiC linearly increased with the implanted fluences up to 5×1017 atoms /cm2. Above this fluence the amount of &#946;-SiC appears to saturate. The stability of graphitic C-C bonds at 1100°C limits the growth of SiC precipitates in the sample implanted at a fluence of 8×1017 atoms /cm2 which results in the saturation behavior of SiC formation in the present study. Secondly, the carbon cluster formation process in silica and the characterization of formed clusters is presented. Silicon dioxide layers ~500 nm thick are thermally grown on a Si (100) wafer. The SiO2 layers are then implanted with 70 keV carbon ions at a fluence of 5×1017 atoms/cm2. The implanted samples are annealed 1100 °C for different time periods of 10 min., 30 min., 60 min., 90 min., and 120 min., in the mixture of argon and hydrogen gas (96 % Ar + 4% hydrogen). Photoluminescence spectroscopy reveals UV to visible emission from the samples. A detail mechanism of the photoluminescence and its possible origin is discussed …
Electrical Conduction Mechanisms in the Disordered Material System P-type Hydrogenated Amorphous Silicon
The electrical and optical properties of boron doped hydrogenated amorphous silicon thin films (a-Si) were investigated to determine the effect of boron and hydrogen incorporation on carrier transport. The a-Si thin films were grown by plasma enhanced chemical vapor deposition (PECVD) at various boron concentrations, hydrogen dilutions, and at differing growth temperatures. The temperature dependent conductivity generally follows the hopping conduction model. Above a critical temperature, the dominant conduction mechanism is Mott variable range hopping conductivity (M-VRH), where p = ¼, and the carrier hopping depends on energy. However, at lower temperatures, the coulomb interaction between charge carriers becomes important and Efros-Shklosvkii variable hopping (ES-VRH) conduction, where p=1/2, must be included to describe the total conductivity. To correlate changes in electrical conductivity to changes in the local crystalline order, the transverse optical (TO) and transverse acoustic (TA) modes of the Raman spectra were studied to relate changes in short- and mid-range order to the effects of growth temperature, boron, and hydrogen incorporation. With an increase of hydrogen and/or growth temperature, both short and mid-range order improve, whereas the addition of boron results in the degradation of short range order. It is seen that there is a direct correlation between the electrical conductivity and changes in the short and mid-range order resulting from the passivation of defects by hydrogen and the creation of trap states by boron. This work was done under the ARO grant W911NF-10-1-0410, William W. Clark Program Manager. The samples were provided by L-3 Communications.
Investigation of Room Temperature Soft Ferromagnetism in Indium Phosphide Substrate Synthesized via Low Energy Nickel Ion Implantation
In this work, we have utilized an ion beam process known as gettering to migrate implanted Ni ions much deeper into the bulk substrate than their initial projected end of the range. The projected mean depth is known as Rp. The gettering effect is the most crucial part of the fabrication and we have found that for an H fluence of 3x 1016 cm-2 there is a threshold fluence of approximately 7.5 x 1015 cm-2 that cannot be surpassed if the gettering process is to be completed along with the substrate recovered to the high crystalline quality. This hard threshold is due to the gettering process relaxation induced mechanism that is responsible for migrating the Ni to the Rp/2 location while the H is vacating during the thermal annealing process. If the total number of vacancies produced by the H dissociation is not substantially larger than the total number of implanted Ni atoms the Ni will migrate to the Rp location of the Ni implantation at the amorphous and crystalline interface and toward the surface. When the gettering condition is not met the resulting magnetic responses vary from an exceptionally weak ferromagnetic response to not exhibiting a magnetic response. Additionally, conducting the ion implantation at an elevated substrate temperature does not increase the threshold Ni fluence above our established limit. During the elevated substrate temperature implantation, the hydrogen ions diffuse out to the surface resulting in less migration of the Ni to the initial Rp location within the Ni implantation region. The elevated temperature implantation condition appears to not create a sharp amorphous crystalline interface at the end of the range for the Ni implantation.
The Stopping of Energetic Si, P and S Ions in Ni, Cu, Ge and GaAs Targets
Accurate knowledge of stopping powers is essential for these for quantitative analysis and surface characterization of thin films using ion beam analysis (IBA). These values are also of interest in radiobiology and radiotherapy, and in ion- implantation technology where shrinking feature sizes puts high demands on the accuracy of range calculations. A theory that predicts stopping powers and ranges for all projectile-target combinations is needed. The most important database used to report the stopping powers is the SRIM/TRIM program developed by Ziegler and coworkers. However, other researchers report that at times, these values differ significantly from experimental values. In this study the stopping powers of Si, P and S ions have been measured in Ni, Cu, Ge and GaAs absorbers in the energy range ~ 2-10 MeV. For elemental films of Ni, Cu and Ge, the stopping of heavy ions was measured using a novel ERD (Elastic Recoil Detection) based technique. In which an elastically recoiled lighter atom is used to indirectly measure the energy of the incoming heavy ion using a surface barrier detector. In this way it was possible to reduce the damage and to improve the FWHM of the detector. The results were compared to SRIM-2000 predictions and other experimental measurements. A new technique derived from Molecular Beam Epitaxy (MBE) was developed to prepare stoichiometric GaAs films on thin carbon films for use in transmission ion beam experiments. The GaAs films were characterized using X-ray Photoelectron Spectroscopy (XPS) and Particle Induced X-ray Emission (PIXE). These films were used to investigate the stopping powers of energetic heavy ions in GaAs and to provide data for the calculation of Bethe-Bloch parameters in the framework of the Modified Bethe-Bloch theory. As a result of this study, stopping power data are available for the first time for Si and P ions …
Energy Distribution of Sputtered Neutral Atoms from a Multilayer Target
Energy distribution measurements of sputtered neutral particles contribute to the general knowledge of sputtering, a common technique for surface analysis. In this work emphasis was placed on the measurement of energy distribution of sputtered neutral atoms from different depths. The liquid Ga-In eutectic alloy as a sample target for this study was ideal due to an extreme concentration ratio gradient between the top two monolayers. In pursuing this study, the method of sputter-initiated resonance ionization spectroscopy (SIRIS) was utilized. SIRIS employs a pulsed ion beam to initiate sputtering and tunable dye lasers for resonance ionization. Observation of the energy distribution was achieved with a position-sensitive detector. The principle behind the detector's energy resolution is time of flight (TOF) spectroscopy. For this specific detector, programmed time intervals between the sputtering pulse at the target and the ionizing laser pulse provided information leading to the energy distribution of the secondary neutral particles. This experiment contributes data for energy distributions of sputtered neutral particles to the experimental database, required by theoretical models and computer simulations for the sputtering phenomenon.
Scanning Tunneling Microscopy of Homo-Epitaxial Chemical Vapor Deposited Diamond (100) Films
Atomic resolution images of hot-tungsten filament chemical-vapor-deposition (CVD) grown epitaxial diamond (100) films obtained in ultrahigh vacuum (UHV) with a scanning tunneling microscope (STM) are reported. A (2x1) dimer surface reconstruction and amorphous atomic regions were observed on the hydrogen terminated (100) surface. The (2x1) unit cell was measured to be 0.51"0.01 x 0.25"0.01 nm2. The amorphous regions were identified as amorphous carbon. After CVD growth, the surface of the epitaxial films was amorphous at the atomic scale. After 2 minutes of exposure to atomic hydrogen at 30 Torr and the sample temperature at 500° C, the surface was observed to consist of amorphous regions and (2x1) dimer reconstructed regions. After 5 minutes of exposure to atomic hydrogen, the surface was observed to consist mostly of (2x1) dimer reconstructed regions. These observations support a recent model for CVD diamond growth that is based on an amorphous carbon layer that is etched or converted to diamond by atomic hydrogen. With further exposure to atomic hydrogen at 500° C, etch pits were observed in the shape of inverted pyramids with {111} oriented sides. The temperature dependence of atomic hydrogen etching of the diamond (100) surface was also investigated using UHV STM, and it was found that it was highly temperature dependent. Etching with a diamond sample temperature of 200° C produced (100) surfaces that are atomically rough with no large pits, indicating that the hydrogen etch was isotropic at 200° C. Atomic hydrogen etching of the surface with a sample temperature of 500° C produced etch-pits and vacancy islands indicating an anisotropic etch at 500° C. With a sample temperature of 1000° C during the hydrogen etch, the (100) surface was atomically smooth with no pits and few single atomic vacancies, but with vacancy rows predominantly in the direction of the dimer …
Space-Charge Saturation and Current Limits in Cylindrical Drift Tubes and Planar Sheaths
Space-charge effects play a dominant role in many areas of physics. In high-power microwave devices using high-current, relativistic electron beams, it places a limit on the amount of radiation a device can produce. Because the beam's space-charge can actually reflect a portion of the beam, the ability to accurately predict the amount of current a device can carry is needed. This current value is known as the space-charge limited current. Because of the mathematical difficulties, this limit is typically estimated from a one-dimensional theory. This work presents a two-dimensional theory for calculating an upper-bound for the space-charge limited current of relativistic electron beams propagating in grounded coaxial drift tubes. Applicable to annular beams of arbitrary radius and thickness, the theory includes the effect introduced by a finite-length drift tube of circular cross-section. Using Green's second identity, the need to solve Poisson's equation is transferred to solving a Sturm-Liouville eigenvalue problem, which is easily solved by elementary methods. In general, the resulting eigenvalue, which is required to estimate the limiting current, must be numerically determined. However, analytic expressions can be found for frequently encountered limiting cases. Space-charge effects also produce the fundamental collective behavior found in plasmas, especially in plasma sheaths. A plasma sheath is the transition region between a bulk plasma and an adjacent plasma-facing surface. The sheath controls the loss of particles from the plasma in order to maintain neutrality. Using a fully kinetic theory, the problem of a planar sheath with a single-minimum electric potential profile is investigated. Appropriate for single charge-state ions of arbitrary temperature, the theory includes the emission of warm electrons from the surface as well as a net current through the sheath and is compared to particle-in-cell simulations. Approximate expressions are developed for estimating the sheath potential as well as the transition to space-charge …
Charge State Distributions in Molecular Dissociation
The present work provides charge state fractions that may be used to generate TEAMS relative sensitivity factors for impurities in semiconductor materials.
Ion-Induced Damage In Si: A Fundamental Study of Basic Mechanisms over a Wide Range of Implantation Conditions
A new understanding of the damage formation mechanisms in Si is developed and investigated over an extended range of ion energy, dose, and irradiation temperature. A simple model for dealing with ion-induced damage is proposed, which is shown to be applicable over the range of implantation conditions. In particular the concept of defect "excesses" will be discussed. An excess exists in the lattice when there is a local surplus of one particular type of defect, such as an interstitial, over its complimentary defect (i.e., a vacancy). Mechanisms for producing such excesses by implantation will be discussed. The basis of this model specifies that accumulation of stable lattice damage during implantation depends upon the excess defects and not the total number of defects. The excess defect model is validated by fundamental damage studies involving ion implantation over a range of conditions. Confirmation of the model is provided by comparing damage profiles after implantation with computer simulation results. It will be shown that transport of ions in matter (TRIM) can be used effectively to model the ion-induced damage profile, i.e. excess defect distributions, by a simple subtraction process in which the spatially correlated defects are removed, thereby simulating recombination. Classic defect studies illuminate defect interactions from concomitant implantation of high- and medium-energy Si+-self ions. Also, the predictive quality of the excess defect model was tested by applying the model to develop several experiments to engineer excess defect concentrations to substantially change the nature and distribution of the defects. Not only are the excess defects shown to play a dominant role in defect-related processing issues, but their manipulation is demonstrated to be a powerful tool in tailoring the implantation process to achieve design goals. Pre-amorphization and dual implantation of different energetic ions are two primary investigative tools used in this work. Various analyses, …
Microscopic Foundations of Thermodynamics and Generalized Statistical Ensembles
This dissertation aims at addressing two important theoretical questions which are still debated in the statistical mechanical community. The first question has to do with the outstanding problem of how to reconcile time-reversal asymmetric macroscopic laws with the time-reversal symmetric laws of microscopic dynamics. This problem is addressed by developing a novel mechanical approach inspired by the work of Helmholtz on monocyclic systems and the Heat Theorem, i.e., the Helmholtz Theorem. By following a line of investigation initiated by Boltzmann, a Generalized Helmholtz Theorem is stated and proved. This theorem provides us with a good microscopic analogue of thermodynamic entropy. This is the volume entropy, namely the logarithm of the volume of phase space enclosed by the constant energy hyper-surface. By using quantum mechanics only, it is shown that such entropy can only increase. This can be seen as a novel rigorous proof of the Second Law of Thermodynamics that sheds new light onto the arrow of time problem. The volume entropy behaves in a thermodynamic-like way independent of the number of degrees of freedom of the system, indicating that a whole thermodynamic-like world exists at the microscopic level. It is also shown that breaking of ergodicity leads to microcanonical phase transitions associated with nonanalyticities of volume entropy. The second part of the dissertation deals with the problem of the foundations of generalized ensembles in statistical mechanics. The starting point is Boltzmann's work on statistical ensembles and its relation with the Heat Theorem. We first focus on the nonextensive thermostatistics of Tsallis and the associated deformed exponential ensembles. These ensembles are analyzed in detail and proved (a) to comply with the requirements posed by the Heat Theorem, and (b) to interpolate between canonical and microcanonical ensembles. Further they are showed to describe finite systems in contact with finite heat baths. …
Neutron Transmutation and Hydrogenation Study of Hg₁₋xCdxTe
Anomalous Hall behavior of HgCdTe refers to a "double cross-over" feature of the Hall coefficient in p-type material, or a peak in the Hall mobility or Hall coefficient in n-type material. A magnetoconductivity tensor approach was utilized to identify presence of two electrons contributing to the conduction as well as transport properties of each electron in the material. The two electron model for the mobility shows that the anomalous Hall behavior results from the competition of two electrons, one in the energy gap graded region near the CdZnTe/HgCdTe interface with large band gap and the other in the bulk of the LPE film with narrow band gap. Hg0.78Cd0.22Te samples grown by LPE on CdZnTe(111B)-oriented substrates were exposed to various doses of thermal neutrons (~1.7 x 1016 - 1.25 x 1017 /cm2) and subsequently annealed at ~220oC for ~24h in Hg saturated vapor to recover damage and reduce the presence of Hg vacancies. Extensive Magnetotransport measurements were performed on these samples. SIMS profile for impurities produced by neutron irradiation was also obtained. The purpose for this study is to investigate the influence of neutron irradiation on this material as a basis for further study on HgCdTe74Se. The result shows that total mobility is observed to decrease with increased neutron dose and can be fitted by including a mobility inverse proportional to neutron dose. Electron introduction rate of thermal neutron is much smaller than that of fission neutrons. Total recovering of the material is suggested to have longer time annealing. Using Kane's model, we also fitted carrier concentration change at low temperature by introducing a donor level with activation energy changing with temperature. Results on Se diffusion in liquid phase epitaxy (LPE) grown HgCdTe epilayers is reported. The LPE Hg0.78Cd0.22Te samples were implanted with Se of 2.0×1014/cm2 at 100keV and annealed at …
Effects of Dissipation on Propagation of Surface Electromagnetic and Acoustic Waves
With the recent emergence of the field of metamaterials, the study of subwavelength propagation of plane waves and the dissipation of their energy either in the form of Joule losses in the case of electomagnetic waves or in the form of viscous dissipation in the case of acoustic waves in different interfaced media assumes great importance. with this motivation, I have worked on problems in two different areas, viz., plasmonics and surface acoustics. the first part (chapters 2 & 3) of the dissertation deals with the emerging field of plasmonics. Researchers have come up with various designs in an efort to fabricate efficient plasmonic waveguides capable of guiding plasmonic signals. However, the inherent dissipation in the form of Joule losses limits efficient usage of surface plasmon signal. a dielectric-metal-¬dielectric planar structure is one of the most practical plasmonic structures that can serve as an efficient waveguide to guide electromagnetic waves along the metal-dielectric boundary. I present here a theoretical study of propagation of surface plasmons along a symmetric dielectric-metal-dielectric structure and show how proper orientation of the optical axis of the anisotropic substrate enhances the propagation length. an equation for propagation length is derived in a wide range of frequencies. I also show how the frequency of coupled surface plasmons can be modulated by changing the thickness of the metal film. I propose a Kronig-Penny model for the plasmonic crystal, which in the long wavelength limit, may serve as a homogeneous dielectric substrate with high anisotropy which do not exist for natural optical crystals. in the second part (chapters 4 & 5) of the dissertation, I discuss an interesting effect of extraordinary absorption of acoustic energy due to resonant excitation of Rayleigh waves in a narrow water channel clad between two metal plates. Starting from the elastic properties of the …
Scanning Tunneling Microscopy of Epitaxial Diamond (110) and (111) Films and Field Emission Properties of Diamond Coated Molybdenum Microtips
The growth mechanism of chemical vapor deposition (CVD) grown homo-epitaxial diamond (110) and (111) films was studied using ultrahigh vacuum (UHV) scanning tunneling microscopy (STM). In addition, the field emission properties of diamond coated molybdenum microtips were studied as a function of exposure to different gases.
Ion Beam Synthesis of Binary and Ternary Transition Metal Silicide Thin Films
Among the well-known methods to form or modify the composition and physical properties of thin films, ion implantation has shown to be a very powerful technique. In particular, ion beam syntheses of binary iron silicide have been studied by several groups. Further, the interests in transition metal silicide systems are triggered by their potential use in advanced silicon based opto-electronic devices. In addition, ternary silicides have been by far less studied than their binary counterparts despite the fact that they have interesting magnetic and electronic properties. In this study, we investigate ion beam synthesis of Fe-Si binary structures and Fe-Co-Si ternary structures. This work involves fundamental investigation into development of a scalable synthesis process involving binary and ternary transitional metal silicide thin films and Nano-structures using low energy ion beams. Binary structures were synthesized by implanting Fe- at 50 keV energy. Since ion implantation is a dynamic process, Dynamic simulation techniques were used in these studies to determine saturation fluences for ion implantation. Also, static and dynamic simulation results were compared with experimental results. The outcome of simulations and experimental results indicate, dynamic simulation codes are more suitable than static version of the TRIM to simulate high fluence, low energy and, heavy ion implantation processes. Furthermore, binary Fe-Si phase distribution was determined at different implantation fluences and annealing temperatures. A higher fluence implantation at 2.16×1017 atoms/cm2 and annealing at 500 oC showed three different Fe-Si phase formations (β-FeSi2, FeSi and Fe3Si) in substrate. Further, annealing the samples at 800 oC for 60 minutes converted the Fe3Si phase into FeSi2 and FeSi phases. As an extension, a second set of Fe- ion implantations was carried with the same parameters while the substrate was placed under an external magnetic field. External magnetic fields stimulate the formation of magnetic phase centers in the …
Non-Poissonian statistics, aging and "blinking'" quantum dots.
This dissertation addresses the delicate problem of aging in complex systems characterized by non-Poissonian statistics. With reference to a generic two-states system interacting with a bath it is shown that to properly describe the evolution of such a system within the formalism of the continuous time random walk (CTRW), it has to be taken into account that, if the system is prepared at time t=0 and the observation of the system starts at a later time ta>0, the distribution of the first sojourn times in each of the two states depends on ta, the age of the system. It is shown that this aging property in the fractional derivative formalism forces to introduce a fractional index depending on time. It is shown also that, when a stationary condition exists, the Onsager regression principle is fulfilled only if the system is aged and consequently if an infinitely aged distribution for the first sojourn times is adopted in the CTRW formalism used to describe the system itself. This dissertation, as final result, shows how to extend to the non-Poisson case the Kubo Anderson (KA) lineshape theory, so as to turn it into a theoretical tool adequate to describe the time evolution of the absorption and emission spectra of CdSe quantum dots. The fluorescence emission of these single nanocrystals exhibits interesting intermittent behavior, namely, a sequence of "light on" and "light off" states, departing from Poisson statistics. Taking aging into account an exact analytical treatment is derived to calculate the spectrum. In the regime fitting experimental data this final result implies that the spectrum of the "blinking" quantum dots must age forever.
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