Structural and Photoelectron Emission Properties of Chemical Vapor Deposition Grown Diamond Films

Structural and Photoelectron Emission Properties of Chemical Vapor Deposition Grown Diamond Films

Date: August 1998
Creator: Akwani, Ikerionwu Asiegbu
Description: The effects of methane (CH4), diborone (B2H6) and nitrogen (N2) concentrations on the structure and photoelectron emission properties of chemical vapor deposition (CVD) polycrystalline diamond films were studied. The diamond films were grown on single-crystal Si substrates using the hot-tungsten filament CVD technique. Raman spectroscopy and x-ray photoelectron spectroscopy (XPS) were used to characterize the different forms of carbon in the films, and the fraction of sp3 carbon to sp3 plus sp2 carbon at the surface of the films, respectively. Scanning electron microscopy (SEM) was used to characterize the surface morphology of the films. The photoelectron emission properties were determined by measuring the energy distributions of photoemitted electrons using ultraviolet photoelectron spectroscopy (UPS), and by measuring the photoelectric current as a function of incident photon energy.
Contributing Partner: UNT Libraries
The Physics of Gaseous Exposures on Active Field Emission Microcathode Arrays

The Physics of Gaseous Exposures on Active Field Emission Microcathode Arrays

Date: September 1996
Creator: Chalamala, Babu Reddy
Description: The interaction of active molybdenum field emission microcathode arrays with oxygen, water, carbon dioxide, methane, hydrogen and helium gases was studied. Experiments were setup to measure the emission characteristics as a function of gas exposures. The resulting changes in the surface work function of the tips were determined from the Fowler-Nordheim plots. The kinetics of the FEA-gas interaction were studied by observing the ion species originating from the array during and after gas exposures with a high resolution quadrupole mass spectrometer. With the work function data and the mass spectrometry information, the mechanisms responsible for emission degradation and subsequent device recovery after exposures have been determined. The data obtained was used in estimating the device lifetimes under various vacuum environments. Also it was found that the gas exposure effects are similar in dc and pulsed modes of operation of the arrays, thus permitting the use of dc mode testing as an effective acceleration method in establishing the device lifetimes under various vacuum conditions. The vacuum conditions required for the long term emission current stability and reliability of vacuum microelectronic devices employing FEAs are established. Exposure of Mo field emitter arrays to oxygen bearing species like oxygen, water and carbon dioxide ...
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Charge State Dependence of L-Shell X-Ray Production Cross Sections of ₂₈Ni, ₂₉Cu, ₃₀Zn, ₃₁Ga, and ₃₂Ge by Energetic Oxygen Ions

Charge State Dependence of L-Shell X-Ray Production Cross Sections of ₂₈Ni, ₂₉Cu, ₃₀Zn, ₃₁Ga, and ₃₂Ge by Energetic Oxygen Ions

Date: August 1996
Creator: Azordegan, Amir R. (Amir Reza)
Description: Charge state dependence of L-shell x-ray production cross sections have been measured for 4-14 MeV ¹⁶O^q (q=3⁺-8⁺) ions incident on ultra-clean, ultra-thin copper, and for 12 MeV ¹⁶O^q (q=3⁺-8⁺) on nickel, zinc, gallium and germanium solid foils. L-shell x-ray production cross section were measured using target foils of thickness ≤0.6 μg/cm² evaporated onto 5 μg/cm² carbon backings. Oxygen ions at MeV energies and charge state q were produced using a 3MV 9SDH-2 National Electrostatics Corporation tandem Pelletron accelerator. Different charge states, with and without K-vacancies, were produced using a post acceleration nitrogen striping gas cell or ¹²C stripping foils. L-shell x-rays from ultra-thin ₂₈Ni, ₂₉Cu,₃₀Zn,₃₁Ga, and ₃₂Ge targets were measured using a Si(Li) x-ray detector with a FWHM resolution of 135 eV at 5.9 keV. The scattered projectiles were detected simultaneously by means of silicon surface barrier detectors at angle of 45° and 169° with respect to the beam direction. The electron capture (EC) as well as direct ionization (DI) contributions were determined from the projectile charge state dependence of the target x-ray production cross sections under single collision conditions. The present work was undertaken to expand the measurements of L-shell x-ray production cross sections upon selected elements with low ...
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Accelerator Mass Spectrometry Studies of Highly Charged Molecular Ions

Accelerator Mass Spectrometry Studies of Highly Charged Molecular Ions

Date: December 1994
Creator: Kim, Yong-Dal
Description: The existence of singly, doubly, and triply charged diatomic molecular ions was observed by using an Accelerator Mass Spectrometry (AMS) technique. The mean lifetimes of 3 MeV boron diatomic molecular ions were measured. No isotopic effects on the mean lifetimes of boron diatomic molecules were observed for charge state 3+. Also, the mean lifetime of SiF^3+ was measured.
Contributing Partner: UNT Libraries
Charge State Dependence of M-Shell X-Ray Production in 67Ho by 2-12 MeV Carbon Ions

Charge State Dependence of M-Shell X-Ray Production in 67Ho by 2-12 MeV Carbon Ions

Date: August 1994
Creator: Sun, Hsueh-Li
Description: The charge state dependence of M-shell x-ray production cross sections of 67HO bombarded by 2-12 MeV carbon ions with and without K-vacancies are reported. The experiment was performed using an NEC 9SDH-2 tandem accelerator at the Ion Beam Modification and Analysis Laboratory of the University of North Texas. The high charge state carbon ions were produced by a post-accelerator stripping gas cell. Ultra-clean holmium targets were used in ion-atom collision to generate M-shell x rays at energies from 1.05 to 1.58 keV. The x-ray measurements were made with a windowless Si(Li) x-ray detector that was calibrated using radiative sources, particle induced x-ray emission (PIXE), and the atomic field bremsstrahlung (AFB) techniques.
Contributing Partner: UNT Libraries