Photoelectric Emission Measurements for CVD Grown Polycrystalline Diamond Films

Photoelectric Emission Measurements for CVD Grown Polycrystalline Diamond Films

Date: August 1999
Creator: Hassan, Tarek
Description: We examined CVD grown polycrystalline diamond films having different methane concentrations to detect defects and study the possible correlation between the methane concentration used during the growth process and the defect density. SEM and Raman results show that the amorphous and sp2 carbon content of the films increases with methane concentration. Furthermore, photoelectric emission from diamond is confirmed to be a two-photon process, hence the electrons are emitted from normally unoccupied states. We found that the photoelectric yield, for our samples, decreases with the increase in methane concentration. This trend can be accounted for in two different ways: either the types of defects observed in this experiment decrease in density as the methane concentration increases; or, the defect density stays the same or increases, but the increase in methane concentration leads to an increase in the electron affinity, which reduces the overall photoelectric yield.
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Growth and Characterization of β-Iron Disilicide, β-Iron Silicon Germanide, and Osmium Silicides

Growth and Characterization of β-Iron Disilicide, β-Iron Silicon Germanide, and Osmium Silicides

Date: August 2009
Creator: Cottier, Ryan James
Description: The semiconducting silicides offer significant potential for use in optoelectronic devices. Full implementation of the materials, however, requires the ability to tailor the energy gap and band structure to permit the synthesis of heterojunctions. One promising approach is to alloy the silicides with Ge. As part of an investigation into the synthesis of semiconducting silicide heterostructures, a series of β-Fe(Si1−xGex)2 epilayer samples, with nominal alloy content in the range 0 < x < 0.15, have been prepared by molecular beam epitaxy on Si(100). I present results of the epitaxial and crystalline quality of the films, as determined by reflection high-energy electron diffraction, Rutherford backscattering spectroscopy, and double crystal x-ray diffraction, and of the band gap dependence on the alloy composition, as determined by Fourier transform infrared spectroscopy. A reduction in band gap was observed with increasing Ge content, in agreement with previous theoretical predictions. However Ge segregation was also observed in β-Fe(Si1−xGex)2 epilayers when x > 0.04. Osmium silicide films have been grown by molecular beam epitaxy on Si(100). The silicides have been grown using e-beam evaporation sources for both Os and Si onto Si(100) substrates at varying growth rates and temperatures ranging from 600-700ºC. The resulting films have been ...
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Survey of Approximation Algorithms for Set Cover Problem

Survey of Approximation Algorithms for Set Cover Problem

Date: December 2009
Creator: Dutta, Himanshu Shekhar
Description: In this thesis, I survey 11 approximation algorithms for unweighted set cover problem. I have also implemented the three algorithms and created a software library that stores the code I have written. The algorithms I survey are: 1. Johnson's standard greedy; 2. f-frequency greedy; 3. Goldsmidt, Hochbaum and Yu's modified greedy; 4. Halldorsson's local optimization; 5. Dur and Furer semi local optimization; 6. Asaf Levin's improvement to Dur and Furer; 7. Simple rounding; 8. Randomized rounding; 9. LP duality; 10. Primal-dual schema; and 11. Network flow technique. Most of the algorithms surveyed are refinements of standard greedy algorithm.
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Nonlinear UV Laser Build-up Cavity: An Efficient Design

Nonlinear UV Laser Build-up Cavity: An Efficient Design

Date: May 2009
Creator: Rady, Nicholas Henry
Description: Using the concept of the build-up cavity for second harmonic generation to produce 243nm laser light, an innovative cavity is theoretically explored using a 15mm length CLBO crystal. In order to limit the losses of the cavity, the number of effective optical surfaces is kept to only four and the use of a MgF2 crystal is adopted to separate the harmonic and fundamental laser beam from each other. The cavity is shown to have an expected round trip loss of five tenths of a percent or better, resulting in a conversion efficiency greater than 65%.
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Growing carbon nanotubes by chemical vapor deposition technique.

Growing carbon nanotubes by chemical vapor deposition technique.

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Date: May 2000
Creator: Rajan, Harihar V.
Description: Carbon nanotubes were synthesized in the laboratory using chemical vapor deposition at different methane concentration. I found that a methane concentration of 4 sccm was ideal for well recognizable carbon nanotubes. A higher concentration led to fewer nanotube growth and silicon carbide structure. Coating the sample first with Fe(NO3)3 created a catalyst base on the substrate for the nanotube to adhere and grow on.
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The Effects of Cesium Deposition and Gas Exposure on the Field Emission Properties of Single Wall and Multiwall Carbon Nanotubes

The Effects of Cesium Deposition and Gas Exposure on the Field Emission Properties of Single Wall and Multiwall Carbon Nanotubes

Date: May 2002
Creator: Wadhawan, Atul
Description: The effects of Cs deposition on the field emission (FE) properties of single-walled carbon nanotube (SWNT) bundles were studied. In addition, a comparative study was made on the effects of O2, Ar and H2 gases on the field emission properties of SWNT bundles and multiwall carbon nanotubes (MWNTs). We observed that Cs deposition decreases the turn-on field for FE by a factor of 2.1 - 2.9 and increases the FE current by 6 orders of magnitude. After Cs deposition, the FE current versus voltage (I-V) curves showed non-Fowler-Nordheim behavior at large currents consistent with tunneling from adsorbate states. At lower currents, the ratio of the slope of the FE I-V curves before and after Cs deposition was approximately 2.1. Exposure to N2 does not decrease the FE current, while exposure to O2 decreases the FE current. Our results show that cesiated SWNT bundles have great potential as economical and reliable vacuum electron sources. We find that H2 and Ar gases do not significantly affect the FE properties of SWNTs or MWNTs. O2 temporarily reduces the FE current and increases the turn-on voltage of SWNTs. Full recovery of these properties occurred after operation in UHV. The higher operating voltages in an ...
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Modification of Graphene Properties: Electron Induced Reversible Hydrogenation, Oxidative Etching and Layer-by-layer Thinning

Modification of Graphene Properties: Electron Induced Reversible Hydrogenation, Oxidative Etching and Layer-by-layer Thinning

Date: May 2012
Creator: Jones, Jason David
Description: In this dissertation, I present the mechanism of graphene hydrogenation via three different electron sources: scanning electron microscopy, e-beam irradiation and H2 and He plasma irradiation. in each case, hydrogenation occurs due to electron impact fragmentation of adsorbed water vapor from the sample preparation process. in the proposed model, secondary and backscattered electrons generated from incident electron interactions with the underlying silicon substrate are responsible for the dissociation of water vapor. Chemisorbed H species from the dissociation are responsible for converting graphene into hydrogenated graphene, graphane. These results may lead to higher quality graphane films having a larger band gap than currently reported. in addition, the dissertation presents a novel and scalable method of controllably removing single atomic planes from multi-layer graphene using electron irradiation from an intense He plasma under a positive sample bias. As the electronic properties or multi-layer graphene are highly dependent on the number of layers, n, reducing n in certain regions has many benefits. for example, a mask in conjunction with this thinning method could be used for device applications.
Contributing Partner: UNT Libraries
A Determination of the Fine Structure Constant Using Precision Measurements of Helium Fine Structure

A Determination of the Fine Structure Constant Using Precision Measurements of Helium Fine Structure

Date: August 2010
Creator: Smiciklas, Marc
Description: Spectroscopic measurements of the helium atom are performed to high precision using an atomic beam apparatus and electro-optic laser techniques. These measurements, in addition to serving as a test of helium theory, also provide a new determination of the fine structure constant &#945;. An apparatus was designed and built to overcome limitations encountered in a previous experiment. Not only did this allow an improved level of precision but also enabled new consistency checks, including an extremely useful measurement in 3He. I discuss the details of the experimental setup along with the major changes and improvements. A new value for the J = 0 to 2 fine structure interval in the 23P state of 4He is measured to be 31 908 131.25(30) kHz. The 300 Hz precision of this result represents an improvement over previous results by more than a factor of three. Combined with the latest theoretical calculations, this yields a new determination of &#945; with better than 5 ppb uncertainty, &#945;-1 = 137.035 999 55(64).
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Quantum-Confined CdS Nanoparticles on DNA Templates

Quantum-Confined CdS Nanoparticles on DNA Templates

Date: May 1998
Creator: Rho, Young Gyu
Description: As electronic devices became smaller, interest in quantum-confined semiconductor nanostructures increased. Self-assembled mesoscale semiconductor structures of II-VI nanocrystals are an especially exciting subject because of their controllable band gap and unique photophysical properties. Several preparative methods to synthesize and control the sizes of the individual nanocrystallites and the electronic and optical properties have been intensively studied. Fabrication of patterned nanostructures composed of quantum-confined nanoparticles is the next step toward practical applications. We have developed an innovative method to fabricate diverse nanostructures which relies on the size and a shape of a chosen deoxyribonucleic acid (DNA) template.
Contributing Partner: UNT Libraries
Structural and Photoelectron Emission Properties of Chemical Vapor Deposition Grown Diamond Films

Structural and Photoelectron Emission Properties of Chemical Vapor Deposition Grown Diamond Films

Date: August 1998
Creator: Akwani, Ikerionwu Asiegbu
Description: The effects of methane (CH4), diborone (B2H6) and nitrogen (N2) concentrations on the structure and photoelectron emission properties of chemical vapor deposition (CVD) polycrystalline diamond films were studied. The diamond films were grown on single-crystal Si substrates using the hot-tungsten filament CVD technique. Raman spectroscopy and x-ray photoelectron spectroscopy (XPS) were used to characterize the different forms of carbon in the films, and the fraction of sp3 carbon to sp3 plus sp2 carbon at the surface of the films, respectively. Scanning electron microscopy (SEM) was used to characterize the surface morphology of the films. The photoelectron emission properties were determined by measuring the energy distributions of photoemitted electrons using ultraviolet photoelectron spectroscopy (UPS), and by measuring the photoelectric current as a function of incident photon energy.
Contributing Partner: UNT Libraries
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