Effect of Fluorine and Hydrogen Radical Species on Modified Oxidized Ni(pt)si
Description:
NiSi is an attractive material in the production of CMOS devices. The problem with the utilization of NiSi, is that there is no proper method of cleaning the oxide on the surface. Sputtering is the most common method used for the cleaning, but it has its own complications. Dry cleaning methods include the reactions with radicals and these processes are not well understood and are the focus of the project. Dissociated NF3 and NH3 were used as an alternative and XPS is the technique to analyze th…
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Date:
May 2010
Creator:
Gaddam, Sneha Sen
Partner:
UNT Libraries