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Electrostatic Effects in III-V Semiconductor Based Metal-optical Nanostructures

Description: The modification of the band edge or emission energy of semiconductor quantum well light emitters due to image charge induced phenomenon is an emerging field of study. This effect observed in quantum well light emitters is critical for all metal-optics based light emitters including plasmonics, or nanometallic electrode based light emitters. This dissertation presents, for the first time, a systematic study of the image charge effect on semiconductor–metal systems. the necessity of introducing … more
Date: May 2012
Creator: Gryczynski, Karol Grzegorz
Partner: UNT Libraries
open access

Electrostatic Mechanism of Emission Enhancement in Hybrid Metal-semiconductor Light-emitting Heterostructures

Description: III-V nitrides have been put to use in a variety of applications including laser diodes for modern DVD devices and for solid-state white lighting. Plasmonics has come to the foreground over the past decade as a means for increasing the internal quantum efficiency (IQE) of devices through resonant interaction with surface plasmons which exist at metal/dielectric interfaces. Increases in emission intensity of an order of magnitude have been previously reported using silver thin-films on InGaN/GaN… more
Date: May 2012
Creator: Llopis, Antonio
Partner: UNT Libraries
open access

Ultrafast Spectroscopy of Hybrid Ingan/gan Quantum Wells

Description: Group III nitrides are efficient light emitters. The modification of internal optoelectronic properties of these materials due to strain, external or internal electric field are an area of interest. Insertion of metal nanoparticles (MNPs) (Ag, Au etc) inside the V-shaped inverted hexagonal pits (IHP) of InGaN/GaN quantum wells (QWs) offers the potential of improving the light emission efficiencies. We have observed redshift and blueshift due to the Au MNPs and Ag MNPs respectively. This sh… more
Date: August 2012
Creator: Mahat, Meg Bahadur
Partner: UNT Libraries
open access

Broad-band Light Emission From Ion Implanted Silicon Nanocrystals Via Plasmonic and Non-plasmonic Effects for Optoelectronics

Description: Broad band light emission ranging from the ultraviolet (UV) to the near infrared (NIR) has been observed from silicon nanoparticles fabricated using low energy (30-45 keV) metal and non-metal ion implantation with a fluence of 5*1015 ions/cm2 in crystalline Si(100). It is found from a systematic study of the annealing carried out at certain temperatures that the spectral characteristics remains unchanged except for the enhancement of light emission intensity due to annealing. The annealing resu… more
Date: December 2012
Creator: Singh, Akhilesh K.
Partner: UNT Libraries
open access

Effects of Dissipation on Propagation of Surface Electromagnetic and Acoustic Waves

Description: With the recent emergence of the field of metamaterials, the study of subwavelength propagation of plane waves and the dissipation of their energy either in the form of Joule losses in the case of electomagnetic waves or in the form of viscous dissipation in the case of acoustic waves in different interfaced media assumes great importance. with this motivation, I have worked on problems in two different areas, viz., plasmonics and surface acoustics. the first part (chapters 2 & 3) of the disser… more
Date: May 2012
Creator: Nagaraj, Nagaraj
Partner: UNT Libraries
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