Investigation into the Semiconducting and Device Properties of MoTe2 and MoS2 Ultra-Thin 2D Materials
Description:
The push for electronic devices on smaller and smaller scales has driven research in the direction of transition metal dichalcogenides (TMD) as new ultra-thin semiconducting materials. These ‘two-dimensional' (2D) materials are typically on the order of a few nanometers in thickness with a minimum all the way down to monolayer. These materials have several layer-dependent properties such as a transition to direct band gap at single-layer. In addition, their lack of dangling bonding and remarkab…
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Date:
May 2018
Creator:
Sirota, Benjamin
Partner:
UNT Libraries