Four-Junction Solar Cell with 40% Target Efficiency Fabricated by Wafer Bonding and Layer Transfer: Final Technical Report, 1 January 2005 - 31 December 2007
Description:
We realized high-quality InGaP/GaAs 2-junction top cells on Ge/Si, InGaAs/InP bottom cells, direct-bond series interconnection of tandem cells, and modeling of bonded 3- and 4-junction device performance.
Date:
November 1, 2008
Creator:
Atwater, H. A.
Partner:
UNT Libraries Government Documents Department