Charge State Dependence of M-Shell X-Ray Production in 67Ho by 2-12 MeV Carbon Ions

Charge State Dependence of M-Shell X-Ray Production in 67Ho by 2-12 MeV Carbon Ions

Date: August 1994
Creator: Sun, Hsueh-Li
Description: The charge state dependence of M-shell x-ray production cross sections of 67HO bombarded by 2-12 MeV carbon ions with and without K-vacancies are reported. The experiment was performed using an NEC 9SDH-2 tandem accelerator at the Ion Beam Modification and Analysis Laboratory of the University of North Texas. The high charge state carbon ions were produced by a post-accelerator stripping gas cell. Ultra-clean holmium targets were used in ion-atom collision to generate M-shell x rays at energies from 1.05 to 1.58 keV. The x-ray measurements were made with a windowless Si(Li) x-ray detector that was calibrated using radiative sources, particle induced x-ray emission (PIXE), and the atomic field bremsstrahlung (AFB) techniques.
Contributing Partner: UNT Libraries
Fabrication of silicon-based optical components for an ultraclean accelerator mass spectronomy negative ion source

Fabrication of silicon-based optical components for an ultraclean accelerator mass spectronomy negative ion source

Date: May 1994
Creator: Kirchhoff, J. F.; Marble, D. K.; Weathers, Duncan L.; McDaniel, Floyd Del. (Floyd Delbert), 1942-; Matteson, Samuel E.; Anthony, J. M. et al.
Description: Article discussing the fabrication of silicon-based optical components for an ultraclean accelerator mass spectonomy negative ion source.
Contributing Partner: UNT College of Arts and Sciences
High sensitivity measurement of implanted As in the presence of Ge in Ge(x)Si(1-x)/Si layered alloys using trace element accelerator mass spectrometry

High sensitivity measurement of implanted As in the presence of Ge in Ge(x)Si(1-x)/Si layered alloys using trace element accelerator mass spectrometry

Date: December 11, 2000
Creator: Datar, Sameer A.; Wu, Liying; Guo, Baonian N.; Nigam, Mohit; Necsoiu, Daniela; Zhai, Y. J. et al.
Description: This article discusses high sensitivity measurement of implanted As in the presence of Ge in Ge(x)Si(1-x)/Si layered alloys using trace element accelerator mass spectrometry.
Contributing Partner: UNT College of Arts and Sciences
Trace Element Analysis of Mineral Water Samples through XRF and ICP-MS

Trace Element Analysis of Mineral Water Samples through XRF and ICP-MS

Date: April 19, 2012
Creator: Dash, Akshar; Thurber, Casey; Kummari, Venkata C.; Verbeck, Guido F.; Duggan, Jerome L. & Rout, Bibhudutta
Description: Poster on a trace element analysis of mineral water samples through XRF and ICP-MS.
Contributing Partner: UNT Honors College
Low-level copper concentration measurements in silicon wafers using trace-element accelerator mass spectrometry

Low-level copper concentration measurements in silicon wafers using trace-element accelerator mass spectrometry

Date: June 8, 1998
Creator: McDaniel, Floyd Del. (Floyd Delbert), 1942-; Datar, Sameer A.; Guo, Baonian N.; Renfrow, Steve N.; Anthony, J. M. & Zhao, Z. Y.
Description: This article discusses low-level copper concentration measurements in silicon wafers using trace-element accelerator mass spectrometry.
Contributing Partner: UNT College of Arts and Sciences
Z1 oscillations of the mean charge for isotachic ions in carbon foils

Z1 oscillations of the mean charge for isotachic ions in carbon foils

Date: April 1995
Creator: Arrale, A. M.; Jin, Jianyue; Zhao, Z. Y.; Weathers, Duncan L.; McDaniel, Floyd Del. (Floyd Delbert), 1942- & Matteson, Samuel E.
Description: Article discussing Z1 oscillations of the mean charge for isotachic ions in carbon foils.
Contributing Partner: UNT College of Arts and Sciences
Simultaneous measurement of the average ion-induced electron emission yield and the mean charge for isotachic ions in carbon foils

Simultaneous measurement of the average ion-induced electron emission yield and the mean charge for isotachic ions in carbon foils

Date: February 1997
Creator: Arrale, A. M.; Zhao, Z. Y.; Kirchhoff, J. F.; Weathers, Duncan L.; McDaniel, Floyd Del. (Floyd Delbert), 1942- & Matteson, Samuel E.
Description: Article discussing the simultaneous measurement of the average ion-induced electron emission yield and the mean charge for isotachic ions in carbon foils.
Contributing Partner: UNT College of Arts and Sciences
Experimental evidence for a discrete transition to channeling for 1.0-MeV protons in Si〈100〉

Experimental evidence for a discrete transition to channeling for 1.0-MeV protons in Si〈100〉

Date: April 1998
Creator: Zhao, Z. Y.; Arrale, A. M.; Li, S. L.; Marble, D. K.; Weathers, Duncan L.; Matteson, Samuel E. et al.
Description: This article discusses experimental evidence for a discrete transition to channeling for 1.0-MeV protons in Si〈100〉.
Contributing Partner: UNT College of Arts and Sciences
The stopping of energetic Si, P and S ions in Ni, Cu, Ge and GaAs targets.

The stopping of energetic Si, P and S ions in Ni, Cu, Ge and GaAs targets.

Access: Use of this item is restricted to the UNT Community.
Date: December 2001
Creator: Nigam, Mohit
Description: Accurate knowledge of stopping powers is essential for these for quantitative analysis and surface characterization of thin films using ion beam analysis (IBA). These values are also of interest in radiobiology and radiotherapy, and in ion- implantation technology where shrinking feature sizes puts high demands on the accuracy of range calculations. A theory that predicts stopping powers and ranges for all projectile-target combinations is needed. The most important database used to report the stopping powers is the SRIM/TRIM program developed by Ziegler and coworkers. However, other researchers report that at times, these values differ significantly from experimental values. In this study the stopping powers of Si, P and S ions have been measured in Ni, Cu, Ge and GaAs absorbers in the energy range ~ 2-10 MeV. For elemental films of Ni, Cu and Ge, the stopping of heavy ions was measured using a novel ERD (Elastic Recoil Detection) based technique. In which an elastically recoiled lighter atom is used to indirectly measure the energy of the incoming heavy ion using a surface barrier detector. In this way it was possible to reduce the damage and to improve the FWHM of the detector. The results were compared to SRIM-2000 predictions ...
Contributing Partner: UNT Libraries
Leaf elemental analysis and growth characteristics of mycorrhizal treated post oak seedlings via particle induced X-ray emission spectroscopy.

Leaf elemental analysis and growth characteristics of mycorrhizal treated post oak seedlings via particle induced X-ray emission spectroscopy.

Date: May 2006
Creator: Boling, Blake C.
Description: Growth and element assimilation was investigated in post oak seedlings exposed to four different treatment combinations of fertilization and ectomycorrhizal inoculation. Element concentration in excised leaves was analyzed via particle induced X-ray emission spectrometry with a 1.8 MeV proton macrobeam. Mean growth was significantly different across the treatment groups as well as mean concentration of Mg, Al, S, K, Ca, Fe, Cu, and Zn. The data suggest that fertilization rather than mycorrhizal inoculation had a stronger influence on plant growth and nutrient uptake. A follow up study was conducted with a 3 MeV microbeam. A 850 μm2 scanned area of a post oak leaf produced topographical maps of 11 elements.
Contributing Partner: UNT Libraries
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