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Charge Collection Studies on Integrated Circuit Test Structures using Heavy-Ion Microbeams and MEDICI Simulation Calculations

Description: Ion induced charge collection dynamics within Integrated Circuits (ICs) is important due to the presence of ionizing radiation in the IC environment. As the charge signals defining data states are reduced by voltage and area scaling, the semiconductor device will naturally have a higher susceptibility to ionizing radiation induced effects. The ionizing radiation can lead to the undesired generation and migration of charge within an IC. This can alter, for example, the memory state of a bit, and… more
Date: May 2000
Creator: Guo, Baonian
Partner: UNT Libraries
open access

Low-level copper concentration measurements in silicon wafers using trace-element accelerator mass spectrometry

Description: This article discusses low-level copper concentration measurements in silicon wafers using trace-element accelerator mass spectrometry.
Date: June 8, 1998
Creator: McDaniel, Floyd Del. (Floyd Delbert), 1942-; Datar, Sameer A.; Guo, Baonian N.; Renfrow, Steve N.; Anthony, J. M. & Zhao, Z. Y.
Partner: UNT College of Arts and Sciences
open access

High Sensitivity Measurement of Implanted as in the Presence of Ge in Ge(x)Si(1-x)/Si Layered Alloys Using Trace Element Accelerator Mass Spectrometry

Description: This article discusses high sensitivity measurement of implanted As in the presence of Ge in Ge(x)Si(1-x)/Si layered alloys using trace element accelerator mass spectrometry.
Date: December 11, 2000
Creator: Datar, Sameer A.; Wu, Liying; Guo, Baonian N.; Nigam, Mohit; Necsoiu, Daniela; Zhai, Y. J. et al.
Partner: UNT College of Arts and Sciences
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