Synthesis of silicon and germanium nanowires.
Description:
The vapor-liquid-solid growth process for synthesis of group-IV semiconducting nanowires using silane, germane, disilane and digermane precursor gases has been investigated. The nanowire growth process combines in situ gold seed formation by vapor deposition on atomically clean silicon (111) surfaces, in situ growth from the gaseous precursor(s), and real-time monitoring of nanowire growth as a function of temperature and pressure by a novel optical reflectometry technique. A significant depend…
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Date:
November 1, 2007
Creator:
Clement, Teresa J. (Arizona State University) & Hsu, Julia W. P.
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Partner:
UNT Libraries Government Documents Department