Date: November 18, 1998
Creator: Aton, T.J.; Doyle, B.L.; Duggan, J.L.; El Bouanani, M.; Guo, B.N.; McDaniel, F.D. et al.
Description: As future sizes of Integrated Circuits (ICs) continue to shrink the sensitivity of these devices, particularly SRAMs and DRAMs, to natural radiation is increasing. In this paper, the Ion Beam Induced Charge Collection (IBICC) technique is utilized to simulate neutron-induced Si recoil effects in ICS. The IBICC measurements, conducted at the Sandia National Laboratories employed a 10 MeV carbon microbeam with 1pm diameter spot to scan test structures on specifically designed ICS. With the aid of layout information, an analysis of the charge collection efficiency from different test areas is presented. In the present work a 10 MeV Carbon high-resolution microbeam was used to demonstrate the differential charge collection efficiency in ICS with the aid of the IC design Information. When ions strike outside the FET, the charge was only measured on the outer ring, and decreased with strike distance from this diode. When ions directly strike the inner and ring diodes, the collected charge was localized to these diodes. The charge for ions striking the gate region was shared between the inner and ring diodes. I The IBICC measurements directly confirmed the interpretations made in the earlier work.
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