Design of Shallow p-type Dopants in ZnO
Description:
ZnO is a promising material for short wave-length opto-electronic devices such as UV lasers and LEDs due to its large exciton binding energy and low material cost. ZnO can be doped easily n-type, but the realization of stable p-type ZnO is rather difficult. Using first-principles band structure methods the authors address what causes the p-type doping difficulty in ZnO and how to overcome the p-type doping difficulty in ZnO.
Date:
May 1, 2008
Creator:
Wei, S.H.; Li, J. & Y., Yan.
Partner:
UNT Libraries Government Documents Department