Fundamental surface chemistry of GaAs OMVPE
Description:
Organometallic and hydride compounds are widely used as precursors for the epitaxial growth of GaAs and other compound semiconductors. These precursors are most commonly used to perform organometallic vapor phase epitaxy (OMVPE) and also in related deposition techniques such as atomic layer epitaxy (ALE) and metalorganic molecular beam epitaxy (MOMBE). We have investigated the surface chemical properties of these precursors on GaAs(100) using a variety of surface science diagnostics. Results ha…
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Date:
May 1, 1995
Creator:
Creighton, J.R. & Truong, C.M.
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